| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs
|
Pavanello, Marcelo Antonio
|
|
2007
|
51 |
9 |
p. 1194-1200
7 p.
|
artikel
|
| 2 |
Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs
|
Godoy, A.
|
|
2007
|
51 |
9 |
p. 1211-1215
5 p.
|
artikel
|
| 3 |
Characterization of FD SOI devices and VCO’s on thin dielectric membranes under pressure
|
Olbrechts, B.
|
|
2007
|
51 |
9 |
p. 1229-1237
9 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2007
|
51 |
9 |
p. IFC-
1 p.
|
artikel
|
| 5 |
Electrical characteristics and simulations of self-switching-diodes in SOI technology
|
Farhi, G.
|
|
2007
|
51 |
9 |
p. 1245-1249
5 p.
|
artikel
|
| 6 |
Electrical characterization of true Silicon-On-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity
|
Kilchytska, V.
|
|
2007
|
51 |
9 |
p. 1238-1244
7 p.
|
artikel
|
| 7 |
Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs
|
Rafí, J.M.
|
|
2007
|
51 |
9 |
p. 1201-1210
10 p.
|
artikel
|
| 8 |
High quality Germanium-On-Insulator wafers with excellent hole mobility
|
Nguyen, Q.T.
|
|
2007
|
51 |
9 |
p. 1172-1179
8 p.
|
artikel
|
| 9 |
Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices
|
Donetti, L.
|
|
2007
|
51 |
9 |
p. 1216-1220
5 p.
|
artikel
|
| 10 |
Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations
|
Nigrin, S.
|
|
2007
|
51 |
9 |
p. 1221-1228
8 p.
|
artikel
|
| 11 |
Quantum-wire effects in trigate SOI MOSFETs
|
Colinge, Jean-Pierre
|
|
2007
|
51 |
9 |
p. 1153-1160
8 p.
|
artikel
|
| 12 |
Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures
|
Kilchytska, V.
|
|
2007
|
51 |
9 |
p. 1185-1193
9 p.
|
artikel
|
| 13 |
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
|
Guo, W.
|
|
2007
|
51 |
9 |
p. 1180-1184
5 p.
|
artikel
|
| 14 |
Wideband characterization of SOI materials and devices
|
Raskin, Jean-Pierre
|
|
2007
|
51 |
9 |
p. 1161-1171
11 p.
|
artikel
|
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