| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs
|
Khanduri, Gagan
|
|
2007
|
51 |
6 |
p. 961-964
4 p.
|
artikel
|
| 2 |
A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function
|
Chen, Rongsheng
|
|
2007
|
51 |
6 |
p. 975-981
7 p.
|
artikel
|
| 3 |
A single-poly EEPROM cell structure compatible to standard CMOS process
|
Lin, Ching-Fang
|
|
2007
|
51 |
6 |
p. 888-893
6 p.
|
artikel
|
| 4 |
A study of ion implantation into crystalline germanium
|
Wittmann, R.
|
|
2007
|
51 |
6 |
p. 982-988
7 p.
|
artikel
|
| 5 |
Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes
|
Kim, Dong Myong
|
|
2007
|
51 |
6 |
p. 865-869
5 p.
|
artikel
|
| 6 |
Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films
|
Kouvatsos, Dimitrios N.
|
|
2007
|
51 |
6 |
p. 936-940
5 p.
|
artikel
|
| 7 |
Compact K-band bandpass filter on high-k LiNbO3 substrate
|
Wu, Chia-Sung
|
|
2007
|
51 |
6 |
p. 965-968
4 p.
|
artikel
|
| 8 |
Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits
|
Ruiz-Palmero, José M.
|
|
2007
|
51 |
6 |
p. 842-859
18 p.
|
artikel
|
| 9 |
Design and optimization of a buried channel PMOS integrable in a Si1−x Ge x BiCMOS process
|
Khare, P.
|
|
2007
|
51 |
6 |
p. 828-837
10 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2007
|
51 |
6 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Effect of base–emitter breakdown on class-C power performance of common-base InGaP/GaAs HBTs
|
Halder, Subrata
|
|
2007
|
51 |
6 |
p. 900-904
5 p.
|
artikel
|
| 12 |
Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
|
Nanhui, Niu
|
|
2007
|
51 |
6 |
p. 860-864
5 p.
|
artikel
|
| 13 |
Exact solutions for the capacitance of space charge regions at semiconductor interfaces
|
Schmidt, M.
|
|
2007
|
51 |
6 |
p. 1002-1004
3 p.
|
artikel
|
| 14 |
Gas-sensing properties and complex impedance analysis of Ce-added WO3 nanoparticles to VOC gases
|
Luo, Shijun
|
|
2007
|
51 |
6 |
p. 913-919
7 p.
|
artikel
|
| 15 |
Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs
|
Liu, Dongmin
|
|
2007
|
51 |
6 |
p. 838-841
4 p.
|
artikel
|
| 16 |
High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applications
|
Li, Chen
|
|
2007
|
51 |
6 |
p. 989-994
6 p.
|
artikel
|
| 17 |
Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs
|
Tao, N.G.
|
|
2007
|
51 |
6 |
p. 995-1001
7 p.
|
artikel
|
| 18 |
Influence of ultrasound on the growth striations and electrophysical properties of Ga x In1−x Sb single crystals
|
Kozhemyakin, G.N.
|
|
2007
|
51 |
6 |
p. 820-822
3 p.
|
artikel
|
| 19 |
Investigation of phase change Si2Sb2Te5 material and its application in chalcogenide random access memory
|
Zhang, Ting
|
|
2007
|
51 |
6 |
p. 950-954
5 p.
|
artikel
|
| 20 |
1.3μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well index-coupled distribution feedback laser diodes
|
Lei, Po-Hsun
|
|
2007
|
51 |
6 |
p. 925-930
6 p.
|
artikel
|
| 21 |
Modeling the effect of source/drain junction depth on bulk-MOSFET scaling
|
Murali, Raghunath
|
|
2007
|
51 |
6 |
p. 823-827
5 p.
|
artikel
|
| 22 |
MOSFET I–V characteristics at small and large drain biases in the linear region
|
Katto, Hisao
|
|
2007
|
51 |
6 |
p. 905-912
8 p.
|
artikel
|
| 23 |
On the temperature stability of integrated MIS low-pass filter structures
|
Kühn, M.
|
|
2007
|
51 |
6 |
p. 931-935
5 p.
|
artikel
|
| 24 |
Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation
|
Ismail, Raid A.
|
|
2007
|
51 |
6 |
p. 817-819
3 p.
|
artikel
|
| 25 |
Qualitative analysis on gain compression in power MOS transistor
|
Hsu, Heng-Ming
|
|
2007
|
51 |
6 |
p. 920-924
5 p.
|
artikel
|
| 26 |
Reduced temperature S-parameter measurements of 400+GHz sub-micron InP DHBTs
|
Li, James Chingwei
|
|
2007
|
51 |
6 |
p. 870-881
12 p.
|
artikel
|
| 27 |
Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes
|
Levinshtein, Michael E.
|
|
2007
|
51 |
6 |
p. 955-960
6 p.
|
artikel
|
| 28 |
Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes
|
Özer, M.
|
|
2007
|
51 |
6 |
p. 941-949
9 p.
|
artikel
|
| 29 |
Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
|
Huang, Jun-Chin
|
|
2007
|
51 |
6 |
p. 882-887
6 p.
|
artikel
|
| 30 |
Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges
|
Kuzmik, J.
|
|
2007
|
51 |
6 |
p. 969-974
6 p.
|
artikel
|
| 31 |
Ultraviolet electroluminescence from organic light-emitting diode with cerium(III)–crown ether complex
|
Yu, Tianzhi
|
|
2007
|
51 |
6 |
p. 894-899
6 p.
|
artikel
|
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