| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A monolithic integrated 4×4 tin oxide gas sensor array with on-chip multiplexing and differential readout circuits
|
Guo, Bin
|
|
2007
|
51 |
1 |
p. 69-76
8 p.
|
artikel
|
| 2 |
An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter
|
Djeffal, F.
|
|
2007
|
51 |
1 |
p. 48-56
9 p.
|
artikel
|
| 3 |
An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration
|
He, Jin
|
|
2007
|
51 |
1 |
p. 179-185
7 p.
|
artikel
|
| 4 |
A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications
|
Yin, Zongyou
|
|
2007
|
51 |
1 |
p. 6-15
10 p.
|
artikel
|
| 5 |
Conserved flux in interband tunneling
|
Beresford, R.
|
|
2007
|
51 |
1 |
p. 136-141
6 p.
|
artikel
|
| 6 |
Corrigendum to “Comments on ‘Modeling MOSFET surface capacitance behavior under non-equilibrium’” [Solid-State Electronics 50 (2) (2006) 259–262]
|
He, Jin
|
|
2007
|
51 |
1 |
p. 186-
1 p.
|
artikel
|
| 7 |
Depletion-mode In0.53Ga0.47As-channel MOSFET utilizing a liquid phase oxidized InGaAs gate
|
Kang, Shin-Jae
|
|
2007
|
51 |
1 |
p. 57-63
7 p.
|
artikel
|
| 8 |
Electrical transport properties characterization of PVK (poly N-vinylcarbazole) for electroluminescent devices applications
|
D’Angelo, P.
|
|
2007
|
51 |
1 |
p. 123-129
7 p.
|
artikel
|
| 9 |
Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures
|
Morrison, Gordon B.
|
|
2007
|
51 |
1 |
p. 38-47
10 p.
|
artikel
|
| 10 |
Enhanced current efficiency in organic light-emitting devices using 4,4′-N,N′-dicarbazole-biphenyl as hole-buffer layer
|
Yang, Huishan
|
|
2007
|
51 |
1 |
p. 111-114
4 p.
|
artikel
|
| 11 |
200GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers
|
Li, James C.
|
|
2007
|
51 |
1 |
p. 1-5
5 p.
|
artikel
|
| 12 |
IFC - Editorial Board
|
|
|
2007
|
51 |
1 |
p. CO2-
1 p.
|
artikel
|
| 13 |
Improved carrier mobility for pentacene TFT by NH3 annealing of gate dielectric
|
Kwan, M.C.
|
|
2007
|
51 |
1 |
p. 77-80
4 p.
|
artikel
|
| 14 |
Low-frequency noise in silicon-on-insulator devices and technologies
|
Simoen, E.
|
|
2007
|
51 |
1 |
p. 16-37
22 p.
|
artikel
|
| 15 |
Parasitic memory effects in shallow-trench-isolated nanocrystal memory devices
|
Dimitrakis, P.
|
|
2007
|
51 |
1 |
p. 147-158
12 p.
|
artikel
|
| 16 |
Polarization dependent analysis of AlGaN/GaN HEMT for high power applications
|
Gangwani, Parvesh
|
|
2007
|
51 |
1 |
p. 130-135
6 p.
|
artikel
|
| 17 |
Precession trajectories of the hole spin in zinc-blende semiconductors
|
Dargys, A.
|
|
2007
|
51 |
1 |
p. 115-122
8 p.
|
artikel
|
| 18 |
Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors
|
Evangelou, E.K.
|
|
2007
|
51 |
1 |
p. 164-169
6 p.
|
artikel
|
| 19 |
Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures
|
Shang, X.Z.
|
|
2007
|
51 |
1 |
p. 85-89
5 p.
|
artikel
|
| 20 |
Si-based metal–semiconductor–metal photodetectors with various design modifications
|
Li, Meiya
|
|
2007
|
51 |
1 |
p. 94-101
8 p.
|
artikel
|
| 21 |
Static and dynamic electrical study of a-SiC:H based p–i–n structure, effect of hydrogen dilution of the intrinsic layer
|
Abdelkrim, M.
|
|
2007
|
51 |
1 |
p. 159-163
5 p.
|
artikel
|
| 22 |
Structure design criteria of dual-channel high mobility electron transistors
|
Lin, Jia-Chuan
|
|
2007
|
51 |
1 |
p. 64-68
5 p.
|
artikel
|
| 23 |
Synthesis and luminescence properties of manganese-doped ZnS nanocrystals
|
Tripathi, Balram
|
|
2007
|
51 |
1 |
p. 81-84
4 p.
|
artikel
|
| 24 |
The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs
|
Liu, Dongmin
|
|
2007
|
51 |
1 |
p. 90-93
4 p.
|
artikel
|
| 25 |
The peak and average temperature in a self-heated GaN HFET
|
McAlister, S.P.
|
|
2007
|
51 |
1 |
p. 142-146
5 p.
|
artikel
|
| 26 |
Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies
|
Trivedi, Vishal P.
|
|
2007
|
51 |
1 |
p. 170-178
9 p.
|
artikel
|
| 27 |
Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks
|
Chowdhury, N.A.
|
|
2007
|
51 |
1 |
p. 102-110
9 p.
|
artikel
|
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