| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analysis and characterization of the injection efficiency tuning IGBT
|
Zhang, Fei
|
|
2006
|
50 |
5 |
p. 813-820
8 p.
|
article
|
| 2 |
Analysis and design of Si terahertz transit-time diodes
|
Bi, Xiaochuan
|
|
2006
|
50 |
5 |
p. 889-896
8 p.
|
article
|
| 3 |
A novel method of electrical characterization of a semiconductor diode at forward bias
|
Zhu, C.Y.
|
|
2006
|
50 |
5 |
p. 821-825
5 p.
|
article
|
| 4 |
A novel 50nm vertical MOSFET with a dielectric pocket
|
Jayanarayanan, S.K.
|
|
2006
|
50 |
5 |
p. 897-900
4 p.
|
article
|
| 5 |
CONTUNT: Thin SOI control tunneling transistor
|
Dobrovolsky, V.
|
|
2006
|
50 |
5 |
p. 754-757
4 p.
|
article
|
| 6 |
Degradation of current drivability of Schottky barrier source/drain transistors induced by high-k gate dielectrics and possible measures to suppress the phenomenon
|
Ono, Mizuki
|
|
2006
|
50 |
5 |
p. 788-794
7 p.
|
article
|
| 7 |
Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law
|
Yu, Daekyu
|
|
2006
|
50 |
5 |
p. 733-740
8 p.
|
article
|
| 8 |
Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors
|
Hoffman, R.L.
|
|
2006
|
50 |
5 |
p. 784-787
4 p.
|
article
|
| 9 |
Efficient optimization of InGaAs and SiGe RF HBTs with a mixed-mode genetic-algorithm technique
|
Tseng, H.C.
|
|
2006
|
50 |
5 |
p. 853-857
5 p.
|
article
|
| 10 |
Electrical characteristics of single-silicon TFT structure with symmetric dual-gate for kink-effect suppression
|
Sung, Man Young
|
|
2006
|
50 |
5 |
p. 795-799
5 p.
|
article
|
| 11 |
Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates
|
Jang, J.H.
|
|
2006
|
50 |
5 |
p. 758-762
5 p.
|
article
|
| 12 |
Growth temperature effect on field emission properties of printable carbon nanotubes cathode
|
Wang, Lili
|
|
2006
|
50 |
5 |
p. 800-804
5 p.
|
article
|
| 13 |
High-pressure band parameters for GaAs: first principles calculations
|
Saib, S.
|
|
2006
|
50 |
5 |
p. 763-768
6 p.
|
article
|
| 14 |
Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers
|
Lin, T.K.
|
|
2006
|
50 |
5 |
p. 750-753
4 p.
|
article
|
| 15 |
Hot-carrier aging of NMOST in analog circuits with large periodic drain signal
|
Habaš, Predrag
|
|
2006
|
50 |
5 |
p. 727-732
6 p.
|
article
|
| 16 |
H2S sensitivity study of polypyrrole/WO3 materials
|
Geng, Lina
|
|
2006
|
50 |
5 |
p. 723-726
4 p.
|
article
|
| 17 |
IFC - Editorial Board
|
|
|
2006
|
50 |
5 |
p. CO2-
1 p.
|
article
|
| 18 |
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As–In0.40Al0.60As–InP HEMT MMIC technology
|
Malmkvist, Mikael
|
|
2006
|
50 |
5 |
p. 858-864
7 p.
|
article
|
| 19 |
Nanometer size periodic domain inversion in LiNbO3 substrate using circular form full cover electrodes
|
Minakata, Makoto
|
|
2006
|
50 |
5 |
p. 848-852
5 p.
|
article
|
| 20 |
On the saturation mechanism in the Ge nanocrystals-based non-volatile memory
|
Kanoun, M.
|
|
2006
|
50 |
5 |
p. 769-773
5 p.
|
article
|
| 21 |
Reeves’s circular transmission line model and its scope of application to extract specific contact resistance
|
Xu, Chuan
|
|
2006
|
50 |
5 |
p. 843-847
5 p.
|
article
|
| 22 |
RF and noise performance of double gate and single gate SOI
|
Lázaro, A.
|
|
2006
|
50 |
5 |
p. 826-842
17 p.
|
article
|
| 23 |
Sensors and actuators based on SOI materials
|
Sanz-Velasco, Anke
|
|
2006
|
50 |
5 |
p. 865-876
12 p.
|
article
|
| 24 |
Simulation of GaN and AlGaN static induction transistors
|
Alptekin, Emre
|
|
2006
|
50 |
5 |
p. 741-749
9 p.
|
article
|
| 25 |
The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance
|
Lim, Tao Chuan
|
|
2006
|
50 |
5 |
p. 774-783
10 p.
|
article
|
| 26 |
Thermally induced current bifurcation in bipolar transistors
|
La Spina, L.
|
|
2006
|
50 |
5 |
p. 877-888
12 p.
|
article
|
| 27 |
Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET
|
Abd-Elhamid, Hamdy
|
|
2006
|
50 |
5 |
p. 805-812
8 p.
|
article
|
Journal description