| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs
|
He, Jin
|
|
2006
|
50 |
3 |
p. 416-421
6 p.
|
artikel
|
| 2 |
A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regions
|
Katto, Hisao
|
|
2006
|
50 |
3 |
p. 301-308
8 p.
|
artikel
|
| 3 |
Amorphous silicon carbide TFTs
|
Estrada, M.
|
|
2006
|
50 |
3 |
p. 460-467
8 p.
|
artikel
|
| 4 |
Analysis of Schottky barrier source-gated transistors in a-Si:H
|
Balon, F.
|
|
2006
|
50 |
3 |
p. 378-383
6 p.
|
artikel
|
| 5 |
Analytical model for base transit time of a bipolar transistor with Gaussian-doped base
|
Shahidul Hassan, M.M.
|
|
2006
|
50 |
3 |
p. 327-332
6 p.
|
artikel
|
| 6 |
Analytical model of drain current of strained-Si/strained-Si1−Y Ge Y /relaxed-Si1−XGeX NMOSFETs and PMOSFETs for circuit simulation
|
Bindu, B.
|
|
2006
|
50 |
3 |
p. 448-455
8 p.
|
artikel
|
| 7 |
An analysis of the factors affecting the alpha parameter used for extracting surface recombination velocity in EBIC measurements
|
Kurniawan, Oka
|
|
2006
|
50 |
3 |
p. 345-354
10 p.
|
artikel
|
| 8 |
An analytical model of Monte Carlo electron scattering in ZnS
|
He, Qing-fang
|
|
2006
|
50 |
3 |
p. 456-459
4 p.
|
artikel
|
| 9 |
A new model for four-terminal junction field-effect transistors
|
Ding, Hao
|
|
2006
|
50 |
3 |
p. 422-428
7 p.
|
artikel
|
| 10 |
An improved substrate current model for ultra-thin gate oxide MOSFETs
|
Yang, Lin-An
|
|
2006
|
50 |
3 |
p. 489-495
7 p.
|
artikel
|
| 11 |
Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory
|
Wu, Meng-Yi
|
|
2006
|
50 |
3 |
p. 309-315
7 p.
|
artikel
|
| 12 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
|
Lee, Seung-Yun
|
|
2006
|
50 |
3 |
p. 333-339
7 p.
|
artikel
|
| 13 |
DC characterization of 4H-SiC depletion mode MOS field effect transistor
|
Zhao, P.
|
|
2006
|
50 |
3 |
p. 384-387
4 p.
|
artikel
|
| 14 |
Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique
|
Kim, Jihyun
|
|
2006
|
50 |
3 |
p. 408-411
4 p.
|
artikel
|
| 15 |
Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations
|
Kranti, Abhinav
|
|
2006
|
50 |
3 |
p. 437-447
11 p.
|
artikel
|
| 16 |
Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer
|
Kikuta, D.
|
|
2006
|
50 |
3 |
p. 316-321
6 p.
|
artikel
|
| 17 |
High temperature performance of AlGaN/GaN HEMTs on Si substrates
|
Tan, W.S.
|
|
2006
|
50 |
3 |
p. 511-513
3 p.
|
artikel
|
| 18 |
IFC - Editorial Board
|
|
|
2006
|
50 |
3 |
p. CO2-
1 p.
|
artikel
|
| 19 |
Implementation of a scalable VBIC model for SiGe:C HBTs
|
Chakravorty, A.
|
|
2006
|
50 |
3 |
p. 399-407
9 p.
|
artikel
|
| 20 |
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors
|
Zhang, Bo
|
|
2006
|
50 |
3 |
p. 480-488
9 p.
|
artikel
|
| 21 |
Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor with extremely low offset voltage
|
Tsai, Jung-Hui
|
|
2006
|
50 |
3 |
p. 468-472
5 p.
|
artikel
|
| 22 |
Modelling of strained-Si/SiGe NMOS transistors including DC self-heating
|
Jankovic, Nebojsa D.
|
|
2006
|
50 |
3 |
p. 496-499
4 p.
|
artikel
|
| 23 |
New contact resistivity characterization method for non-uniform ohmic contacts on GaN
|
Jang, T.
|
|
2006
|
50 |
3 |
p. 433-436
4 p.
|
artikel
|
| 24 |
Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots
|
Tsormpatzoglou, A.
|
|
2006
|
50 |
3 |
p. 340-344
5 p.
|
artikel
|
| 25 |
Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diode
|
Darabi, E.
|
|
2006
|
50 |
3 |
p. 473-479
7 p.
|
artikel
|
| 26 |
Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors
|
Gharbi, R.
|
|
2006
|
50 |
3 |
p. 367-371
5 p.
|
artikel
|
| 27 |
One-step hydrothermal synthesis and gas sensing property of ZnSnO3 microparticles
|
Xu, Jiaqiang
|
|
2006
|
50 |
3 |
p. 504-507
4 p.
|
artikel
|
| 28 |
Optimum bias of power transistor in 0.18μm CMOS technology for Bluetooth application
|
Hsu, Heng-Ming
|
|
2006
|
50 |
3 |
p. 412-415
4 p.
|
artikel
|
| 29 |
Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures
|
Robinson, J.A.
|
|
2006
|
50 |
3 |
p. 429-432
4 p.
|
artikel
|
| 30 |
Physics-based modeling and characterization for silicon carbide power diodes
|
McNutt, Ty R.
|
|
2006
|
50 |
3 |
p. 388-398
11 p.
|
artikel
|
| 31 |
Study of surface-trap-induced gate depletion region of field-modulating plate GaAs–FETs
|
Wakejima, Akio
|
|
2006
|
50 |
3 |
p. 372-377
6 p.
|
artikel
|
| 32 |
The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes
|
Da, Xiaoli
|
|
2006
|
50 |
3 |
p. 508-510
3 p.
|
artikel
|
| 33 |
Thin film Lamb wave resonant structures – The first approach
|
Bjurström, J.
|
|
2006
|
50 |
3 |
p. 322-326
5 p.
|
artikel
|
| 34 |
Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
|
Zhao, Dengtao
|
|
2006
|
50 |
3 |
p. 362-366
5 p.
|
artikel
|
| 35 |
Transparent ring oscillator based on indium gallium oxide thin-film transistors
|
Presley, R.E.
|
|
2006
|
50 |
3 |
p. 500-503
4 p.
|
artikel
|
| 36 |
Transport mechanisms and photovoltaic characteristics of p-S x Se100−x /n-Si heterojunctions
|
El-Nahass, M.M.
|
|
2006
|
50 |
3 |
p. 355-361
7 p.
|
artikel
|
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