| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition
|
Ramaiah, Kodigala Subba
|
|
2006
|
50 |
2 |
p. 119-124
6 p.
|
artikel
|
| 2 |
AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors
|
Shiao, Hung-Pin
|
|
2006
|
50 |
2 |
p. 125-128
4 p.
|
artikel
|
| 3 |
A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology
|
Cheng, Chia-Shih
|
|
2006
|
50 |
2 |
p. 254-258
5 p.
|
artikel
|
| 4 |
Amorphous and excimer laser annealed SiC films for TFT fabrication
|
García, B.
|
|
2006
|
50 |
2 |
p. 241-247
7 p.
|
artikel
|
| 5 |
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET
|
Valizadeh, Pouya
|
|
2006
|
50 |
2 |
p. 282-286
5 p.
|
artikel
|
| 6 |
A numerical study of field plate configurations in RF SOI LDMOS transistors
|
Cortés, I.
|
|
2006
|
50 |
2 |
p. 155-163
9 p.
|
artikel
|
| 7 |
A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET’s with deuterium treatment process
|
Lee, Jae-Sung
|
|
2006
|
50 |
2 |
p. 149-154
6 p.
|
artikel
|
| 8 |
Benchmark tests on surface potential based charge-sheet models
|
He, Jin
|
|
2006
|
50 |
2 |
p. 263-267
5 p.
|
artikel
|
| 9 |
Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current
|
Wong, H.
|
|
2006
|
50 |
2 |
p. 170-176
7 p.
|
artikel
|
| 10 |
Charge storage in a metal–oxide–semiconductor capacitor containing cobalt nanocrystals
|
Zhao, Dengtao
|
|
2006
|
50 |
2 |
p. 268-271
4 p.
|
artikel
|
| 11 |
Comments on “Modeling MOSFET surface capacitance behavior under non-equilibrium”
|
He, Jin
|
|
2006
|
50 |
2 |
p. 259-262
4 p.
|
artikel
|
| 12 |
Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs
|
Gassoumi, Malek
|
|
2006
|
50 |
2 |
p. 214-219
6 p.
|
artikel
|
| 13 |
Detection of hidden structures in a photoexcited semiconductor via principal-component analysis
|
Shiau, Yuo-Hsien
|
|
2006
|
50 |
2 |
p. 191-198
8 p.
|
artikel
|
| 14 |
Dose radiation effects in FinFETs
|
Wu, Xusheng
|
|
2006
|
50 |
2 |
p. 287-290
4 p.
|
artikel
|
| 15 |
Electrical characteristics of GaAs nanocrystalline thin film
|
Nayak, J.
|
|
2006
|
50 |
2 |
p. 164-169
6 p.
|
artikel
|
| 16 |
Electrical characteristics of high-κ dielectric film grown by direct sputtering method
|
Sen, Banani
|
|
2006
|
50 |
2 |
p. 237-240
4 p.
|
artikel
|
| 17 |
Electrostatic coupling between nanocrystals in a quantum flash memory
|
Cordan, A.S.
|
|
2006
|
50 |
2 |
p. 205-208
4 p.
|
artikel
|
| 18 |
Fabrication of high-speed and uncooled AlGaInAs ridge-waveguide laser diodes by STOP technique
|
Peng, Te-Chin
|
|
2006
|
50 |
2 |
p. 142-148
7 p.
|
artikel
|
| 19 |
Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate
|
Zhu, Shiyang
|
|
2006
|
50 |
2 |
p. 232-236
5 p.
|
artikel
|
| 20 |
Formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films
|
Juang, M.H.
|
|
2006
|
50 |
2 |
p. 114-118
5 p.
|
artikel
|
| 21 |
Granular description of charging kinetics in silicon nanocrystals memories
|
Busseret, C.
|
|
2006
|
50 |
2 |
p. 134-141
8 p.
|
artikel
|
| 22 |
High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT
|
Yu, Shu-Jenn
|
|
2006
|
50 |
2 |
p. 291-296
6 p.
|
artikel
|
| 23 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.
|
|
2006
|
50 |
2 |
p. 109-113
5 p.
|
artikel
|
| 24 |
IFC - Editorial Board
|
|
|
2006
|
50 |
2 |
p. CO2-
1 p.
|
artikel
|
| 25 |
Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching
|
Cheng, Chin-Lung
|
|
2006
|
50 |
2 |
p. 103-108
6 p.
|
artikel
|
| 26 |
LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb
|
Cai, Yimao
|
|
2006
|
50 |
2 |
p. 276-281
6 p.
|
artikel
|
| 27 |
Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices
|
Colder, H.
|
|
2006
|
50 |
2 |
p. 209-213
5 p.
|
artikel
|
| 28 |
Measurement of generation parameters on Ru/HfO2/Si MOS capacitor
|
Ťapajna, M.
|
|
2006
|
50 |
2 |
p. 177-180
4 p.
|
artikel
|
| 29 |
Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics
|
Ghosh, Bahniman
|
|
2006
|
50 |
2 |
p. 248-253
6 p.
|
artikel
|
| 30 |
New pixel circuits for driving active matrix organic light emitting diodes
|
Chen, Bo-Ting
|
|
2006
|
50 |
2 |
p. 272-275
4 p.
|
artikel
|
| 31 |
Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatment
|
Hwang, J.D.
|
|
2006
|
50 |
2 |
p. 297-299
3 p.
|
artikel
|
| 32 |
Performance improvement of organic thin film transistors by SiO2/pentacene interface modification using an electrostatically assembled PDDA monolayer
|
Zhu, Mo
|
|
2006
|
50 |
2 |
p. 129-133
5 p.
|
artikel
|
| 33 |
Proton and gamma radiation effects in a new first-generation SiGe HBT technology
|
Haugerud, Becca M.
|
|
2006
|
50 |
2 |
p. 181-190
10 p.
|
artikel
|
| 34 |
Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I–V curves
|
Osvald, J.
|
|
2006
|
50 |
2 |
p. 228-231
4 p.
|
artikel
|
| 35 |
SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering
|
Jelenkovic, Emil V.
|
|
2006
|
50 |
2 |
p. 199-204
6 p.
|
artikel
|
| 36 |
Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of Al m Ga1−m N/GaN MODFET
|
Chattopadhyay, Manju K.
|
|
2006
|
50 |
2 |
p. 220-227
8 p.
|
artikel
|
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