| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A pulse staining method for delineating NN+ and PP+ junctions in silicon
|
Joyce, B.A.
|
|
1962
|
5 |
2 |
p. 102-104
3 p.
|
artikel
|
| 2 |
Comment on “The limits of the small signal theory of transistors”
|
Rittner, E.S.
|
|
1962
|
5 |
2 |
p. 104-108
5 p.
|
artikel
|
| 3 |
Current gain in metal-interface amplifiers
|
Lavine, J.M.
|
|
1962
|
5 |
2 |
p. 109-110
2 p.
|
artikel
|
| 4 |
Defects in epitaxially vapour grown germanium deposits
|
Dale, J.R.
|
|
1962
|
5 |
2 |
p. 108-109
2 p.
|
artikel
|
| 5 |
Die bestimmung des diffusionskoeffizienten von Arsen an pn-Übergängen in Germanium
|
Wölfle, R.
|
|
1962
|
5 |
2 |
p. 98-102
5 p.
|
artikel
|
| 6 |
Die galvanomagnetischen eigenschaften von InSb bei hohen magnetfeldern
|
Hieronymus, H.
|
|
1962
|
5 |
2 |
p. 71-84
14 p.
|
artikel
|
| 7 |
{100} facets in pulled crystals of InSb
|
Strauss, A.J.
|
|
1962
|
5 |
2 |
p. 97-98
2 p.
|
artikel
|
| 8 |
Impurity-induced pipes through diffused layers in silicon
|
Goetzberger, A.
|
|
1962
|
5 |
2 |
p. 61-70
10 p.
|
artikel
|
| 9 |
Iterative arrays of logical circuits
|
Mullen, J.A.
|
|
1962
|
5 |
2 |
p. 111-112
2 p.
|
artikel
|
| 10 |
Microprobing of functioning semiconductor devices for internal voltage and current distributions
|
Sawyer, D.E.
|
|
1962
|
5 |
2 |
p. 89-96
8 p.
|
artikel
|
| 11 |
Some papers to be published in future issues
|
|
|
1962
|
5 |
2 |
p. 113-
1 p.
|
artikel
|
| 12 |
Tables of constants and numerical data. 12. Selected constants relative to semiconductors
|
Pincherle, L.
|
|
1962
|
5 |
2 |
p. 112-
1 p.
|
artikel
|
| 13 |
Trace-plating—A new semiconductor-device fabrication technique
|
Rindner, W.
|
|
1962
|
5 |
2 |
p. 85-88
4 p.
|
artikel
|
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