| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive study of carrier velocity modulation in DGSOI transistors
|
Sampedro, C.
|
|
2005
|
49 |
9 |
p. 1504-1509
6 p.
|
artikel
|
| 2 |
Advanced CAD methodology for history effect characterization in partially depleted SOI libraries
|
Liot, Vincent
|
|
2005
|
49 |
9 |
p. 1466-1476
11 p.
|
artikel
|
| 3 |
A new memory effect (MSD) in fully depleted SOI MOSFETs
|
Bawedin, M.
|
|
2005
|
49 |
9 |
p. 1547-1555
9 p.
|
artikel
|
| 4 |
A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices
|
Gómez-Campos, F.M.
|
|
2005
|
49 |
9 |
p. 1454-1460
7 p.
|
artikel
|
| 5 |
Cross-talk suppression in SOI substrates
|
Baine, P.
|
|
2005
|
49 |
9 |
p. 1461-1465
5 p.
|
artikel
|
| 6 |
Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs
|
Prunnila, M.
|
|
2005
|
49 |
9 |
p. 1516-1521
6 p.
|
artikel
|
| 7 |
Embedded EEPROM design in PD-SOI for application in an extended temperature range (−40°C up to 200°C)
|
Richter, Sonja
|
|
2005
|
49 |
9 |
p. 1484-1487
4 p.
|
artikel
|
| 8 |
Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by atomic force microscope
|
Ionica, I.
|
|
2005
|
49 |
9 |
p. 1497-1503
7 p.
|
artikel
|
| 9 |
FinFET analogue characterization from DC to 110GHz
|
Lederer, D.
|
|
2005
|
49 |
9 |
p. 1488-1496
9 p.
|
artikel
|
| 10 |
Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs
|
Rafí, J.M.
|
|
2005
|
49 |
9 |
p. 1536-1546
11 p.
|
artikel
|
| 11 |
Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effects
|
Bresson, N.
|
|
2005
|
49 |
9 |
p. 1522-1528
7 p.
|
artikel
|
| 12 |
Intra-chip wireless interconnections based on high performances integrated antennas
|
Triantafyllou, Anna
|
|
2005
|
49 |
9 |
p. 1477-1483
7 p.
|
artikel
|
| 13 |
Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas
|
Lucci, Luca
|
|
2005
|
49 |
9 |
p. 1529-1535
7 p.
|
artikel
|
| 14 |
[No title]
|
Gamiz, Francisco
|
|
2005
|
49 |
9 |
p. 1453-
1 p.
|
artikel
|
| 15 |
Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach
|
Sverdlov, V.
|
|
2005
|
49 |
9 |
p. 1510-1515
6 p.
|
artikel
|
| 16 |
Review of SiGe HBTs on SOI
|
Mitrovic, I.Z.
|
|
2005
|
49 |
9 |
p. 1556-1567
12 p.
|
artikel
|
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