| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals
|
Song, Junghui
|
|
2005
|
49 |
8 |
p. 1330-1334
5 p.
|
artikel
|
| 2 |
A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology
|
Chiu, Hsien-Chin
|
|
2005
|
49 |
8 |
p. 1391-1395
5 p.
|
artikel
|
| 3 |
Analytical model for C–V characteristic of fully depleted SOI–MOS capacitors
|
Afzal, B.
|
|
2005
|
49 |
8 |
p. 1262-1273
12 p.
|
artikel
|
| 4 |
A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices
|
Urresti, Jesus
|
|
2005
|
49 |
8 |
p. 1309-1313
5 p.
|
artikel
|
| 5 |
A simple current model for edgeless SOI nMOSFET and a 3-D analysis
|
Giacomini, Renato
|
|
2005
|
49 |
8 |
p. 1255-1261
7 p.
|
artikel
|
| 6 |
Breakdown and hot carrier injection in deep trench isolation structures
|
Elattari, B.
|
|
2005
|
49 |
8 |
p. 1370-1375
6 p.
|
artikel
|
| 7 |
Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/p-Si solar cell
|
El-Nahass, M.M.
|
|
2005
|
49 |
8 |
p. 1314-1319
6 p.
|
artikel
|
| 8 |
Compact modeling of transient substrate current of MOSFET
|
Lee, Wai-Kit
|
|
2005
|
49 |
8 |
p. 1405-1409
5 p.
|
artikel
|
| 9 |
Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications
|
Lee, Sang-Kwon
|
|
2005
|
49 |
8 |
p. 1297-1301
5 p.
|
artikel
|
| 10 |
Correlation between low frequency phase and amplitude fluctuations in transmission line model of a bipolar transistor and the noise reduction method
|
Takagi, Keiji
|
|
2005
|
49 |
8 |
p. 1449-1451
3 p.
|
artikel
|
| 11 |
Design and analysis of a single HBT-based optical receiver front-end
|
Chakrabarti, P.
|
|
2005
|
49 |
8 |
p. 1396-1404
9 p.
|
artikel
|
| 12 |
2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET
|
Hashemi, P.
|
|
2005
|
49 |
8 |
p. 1341-1346
6 p.
|
artikel
|
| 13 |
Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor
|
Baek, C.H.
|
|
2005
|
49 |
8 |
p. 1335-1340
6 p.
|
artikel
|
| 14 |
Effects of self-heating on the microwave performance of SiGe HBTs
|
Sampathkumaran, R.
|
|
2005
|
49 |
8 |
p. 1292-1296
5 p.
|
artikel
|
| 15 |
Electron effective mobility in strained-Si/Si1−x Ge x MOS devices using Monte Carlo simulation
|
Aubry-Fortuna, V.
|
|
2005
|
49 |
8 |
p. 1320-1329
10 p.
|
artikel
|
| 16 |
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors
|
Borgarino, M.
|
|
2005
|
49 |
8 |
p. 1361-1369
9 p.
|
artikel
|
| 17 |
High emissive power MWIR LED array
|
Das, Naresh C.
|
|
2005
|
49 |
8 |
p. 1422-1427
6 p.
|
artikel
|
| 18 |
Impact of halo implantation on 0.13μm floating body partially depleted SOI n-MOSFETs in low temperature operation
|
Pavanello, Marcelo Antonio
|
|
2005
|
49 |
8 |
p. 1274-1281
8 p.
|
artikel
|
| 19 |
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
|
Wang, X.L.
|
|
2005
|
49 |
8 |
p. 1387-1390
4 p.
|
artikel
|
| 20 |
Investigation of indium–tin-oxide ohmic contact to p-GaN and its application to high-brightness GaN-based light-emitting diodes
|
Chang, Kow-Ming
|
|
2005
|
49 |
8 |
p. 1381-1386
6 p.
|
artikel
|
| 21 |
Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions
|
Cordier, C.
|
|
2005
|
49 |
8 |
p. 1376-1380
5 p.
|
artikel
|
| 22 |
Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects
|
Valizadeh, Pouya
|
|
2005
|
49 |
8 |
p. 1352-1360
9 p.
|
artikel
|
| 23 |
Low-resistivity ZrN x metal gate in MOS devices
|
Westlinder, J.
|
|
2005
|
49 |
8 |
p. 1410-1413
4 p.
|
artikel
|
| 24 |
Modeling and simulation of layer-transferred thin silicon solar cell with quasi monocrystalline porous silicon as active layer
|
Banerjee, M.
|
|
2005
|
49 |
8 |
p. 1282-1291
10 p.
|
artikel
|
| 25 |
Model of the drain current saturation in long-gate JFETs and MESFETs
|
Balucani, M.
|
|
2005
|
49 |
8 |
p. 1251-1254
4 p.
|
artikel
|
| 26 |
Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGF
|
Shao, Xue
|
|
2005
|
49 |
8 |
p. 1435-1445
11 p.
|
artikel
|
| 27 |
Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
|
Jhou, Y.D.
|
|
2005
|
49 |
8 |
p. 1347-1351
5 p.
|
artikel
|
| 28 |
Self-homodyne RF-optical LiNbO3 microdisk receiver
|
Hossein-Zadeh, M.
|
|
2005
|
49 |
8 |
p. 1428-1434
7 p.
|
artikel
|
| 29 |
Sensors on bipolar magnetotransistors with the base in the well
|
Tikhonov, R.D.
|
|
2005
|
49 |
8 |
p. 1302-1308
7 p.
|
artikel
|
| 30 |
Simulation of InSb devices using drift–diffusion equations
|
Sijerčić, E.
|
|
2005
|
49 |
8 |
p. 1414-1421
8 p.
|
artikel
|
| 31 |
The bias dependence of the non-radiative recombination current in p–n diodes
|
Grundmann, M.
|
|
2005
|
49 |
8 |
p. 1446-1448
3 p.
|
artikel
|
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