| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Achieving accuracy in modeling the temperature coefficient of threshold voltage in MOS transistors with uniform and horizontally nonuniform channel doping
|
d’Alessandro, V.
|
|
2005
|
49 |
7 |
p. 1098-1106
9 p.
|
artikel
|
| 2 |
A 3.5in. QVGA poly-Si TFT-LCD with integrated driver including new 6-bit DAC
|
Lim, Kyoung Moon
|
|
2005
|
49 |
7 |
p. 1107-1111
5 p.
|
artikel
|
| 3 |
A new multi-valued current-mode adder based on negative-differential resistance using ULP diodes
|
Hassoune, Ilham
|
|
2005
|
49 |
7 |
p. 1185-1191
7 p.
|
artikel
|
| 4 |
A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region
|
Aggarwal, Sandeep Kr.
|
|
2005
|
49 |
7 |
p. 1206-1212
7 p.
|
artikel
|
| 5 |
Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si
|
Lampin, E.
|
|
2005
|
49 |
7 |
p. 1168-1171
4 p.
|
artikel
|
| 6 |
Current-crowding effect in multiple cantilever channel MOSFET
|
Dey, S.
|
|
2005
|
49 |
7 |
p. 1248-1250
3 p.
|
artikel
|
| 7 |
Diamond semiconductor technology for RF device applications
|
Gurbuz, Yasar
|
|
2005
|
49 |
7 |
p. 1055-1070
16 p.
|
artikel
|
| 8 |
Effect of electron beam irradiation on polypropylene films—dielectric and FT-IR studies
|
Abdel-Hamid, H.M.
|
|
2005
|
49 |
7 |
p. 1163-1167
5 p.
|
artikel
|
| 9 |
Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC
|
Yang, B.L.
|
|
2005
|
49 |
7 |
p. 1223-1227
5 p.
|
artikel
|
| 10 |
Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN
|
Reddy, V. Rajagopal
|
|
2005
|
49 |
7 |
p. 1213-1216
4 p.
|
artikel
|
| 11 |
Electron transport in thin SOI, strained-SOI and GeOI MOSFET by Monte-Carlo simulation
|
Barraud, S.
|
|
2005
|
49 |
7 |
p. 1090-1097
8 p.
|
artikel
|
| 12 |
Fowler–Nordheim high electric field stress of power VDMOSFETs
|
Ristić, Goran S.
|
|
2005
|
49 |
7 |
p. 1140-1152
13 p.
|
artikel
|
| 13 |
Frequency dependence of junction capacitance of GaN p–i–n UV detectors
|
Kang, Yong
|
|
2005
|
49 |
7 |
p. 1135-1139
5 p.
|
artikel
|
| 14 |
From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation
|
Shalchian, M.
|
|
2005
|
49 |
7 |
p. 1198-1205
8 p.
|
artikel
|
| 15 |
GaAs MOS capacitors with photo-CVD SiO2 insulator layers
|
Liu, C.H.
|
|
2005
|
49 |
7 |
p. 1077-1080
4 p.
|
artikel
|
| 16 |
Ground and first excited states observed in silicon nanocrystals by photocurrent technique
|
De la Torre, J.
|
|
2005
|
49 |
7 |
p. 1112-1117
6 p.
|
artikel
|
| 17 |
High-temperature (up to 773K) operation of 6-kV 4H-SiC junction diodes
|
Levinshtein, Michael E.
|
|
2005
|
49 |
7 |
p. 1228-1232
5 p.
|
artikel
|
| 18 |
Improved modeling and parameter-extraction procedure emphasizing on extrinsic inductances and base–collector capacitances of collector-up HBTs
|
Tseng, H.C.
|
|
2005
|
49 |
7 |
p. 1071-1076
6 p.
|
artikel
|
| 19 |
Mixed-mode temperature modeling of full-chip based on individual non-isothermal device operations
|
Akturk, Akin
|
|
2005
|
49 |
7 |
p. 1127-1134
8 p.
|
artikel
|
| 20 |
Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET
|
Jankovic, Nebojsa
|
|
2005
|
49 |
7 |
p. 1086-1089
4 p.
|
artikel
|
| 21 |
On the threshold voltage of metal–oxide–semiconductor field-effect transistors
|
Shi, Xuejie
|
|
2005
|
49 |
7 |
p. 1179-1184
6 p.
|
artikel
|
| 22 |
Performance of lateral SOI-MOS static induction transistors for RF power applications
|
Yano, Koji
|
|
2005
|
49 |
7 |
p. 1233-1240
8 p.
|
artikel
|
| 23 |
Physics-based model of quantum-mechanical wave function penetration into thin dielectric films for evaluating modern MOS capacitors
|
Nakamori, Yasuhiko
|
|
2005
|
49 |
7 |
p. 1118-1126
9 p.
|
artikel
|
| 24 |
Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300keV using Monte Carlo simulations
|
Chan, H.Y.
|
|
2005
|
49 |
7 |
p. 1241-1247
7 p.
|
artikel
|
| 25 |
Si-based current-density-enhanced light emission and low-operating-voltage light-emitting/receiving designs
|
Lee, Hsiu-Chih
|
|
2005
|
49 |
7 |
p. 1172-1178
7 p.
|
artikel
|
| 26 |
Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution
|
Tyaginov, S.E.
|
|
2005
|
49 |
7 |
p. 1192-1197
6 p.
|
artikel
|
| 27 |
Study of 4H–SiC trench MOSFET structures
|
Chen, L.
|
|
2005
|
49 |
7 |
p. 1081-1085
5 p.
|
artikel
|
| 28 |
Transient blocking characteristics of highly efficient junction isolations based on standard CMOS process
|
Starke, T.K.H.
|
|
2005
|
49 |
7 |
p. 1217-1222
6 p.
|
artikel
|
| 29 |
Vertical chip of GaN-based blue light-emitting diode
|
Kim, Seong-Jin
|
|
2005
|
49 |
7 |
p. 1153-1157
5 p.
|
artikel
|
| 30 |
ZnO p–n junctions produced by a new route
|
Hazra, S.K.
|
|
2005
|
49 |
7 |
p. 1158-1162
5 p.
|
artikel
|
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