| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate modeling and parameter extraction method for organic TFTs
|
Estrada, M.
|
|
2005
|
49 |
6 |
p. 1009-1016
8 p.
|
artikel
|
| 2 |
A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes
|
Banoushi, A.
|
|
2005
|
49 |
6 |
p. 871-877
7 p.
|
artikel
|
| 3 |
An electron mobility model for wurtzite GaN
|
Schwierz, Frank
|
|
2005
|
49 |
6 |
p. 889-895
7 p.
|
artikel
|
| 4 |
A numerical study of scaling issues for trench power MOSFETs
|
Roig, J.
|
|
2005
|
49 |
6 |
p. 965-975
11 p.
|
artikel
|
| 5 |
A TCAD methodology for high-speed photodetectors
|
Jacob, Biju
|
|
2005
|
49 |
6 |
p. 1002-1008
7 p.
|
artikel
|
| 6 |
Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications
|
Kumar, Anil
|
|
2005
|
49 |
6 |
p. 997-1001
5 p.
|
artikel
|
| 7 |
Characteristics of 4H–SiC MOS interface annealed in N2O
|
Fujihira, Keiko
|
|
2005
|
49 |
6 |
p. 896-901
6 p.
|
artikel
|
| 8 |
Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes
|
Mahajan, Atul
|
|
2005
|
49 |
6 |
p. 945-955
11 p.
|
artikel
|
| 9 |
Electrical properties of [100]-oriented CVD diamond film
|
Su, Qingfeng
|
|
2005
|
49 |
6 |
p. 1044-1048
5 p.
|
artikel
|
| 10 |
Electrical properties of spray pyrolytic tin sulfide films
|
Koteeswara Reddy, N.
|
|
2005
|
49 |
6 |
p. 902-906
5 p.
|
artikel
|
| 11 |
Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriers
|
Khairurrijal,
|
|
2005
|
49 |
6 |
p. 923-927
5 p.
|
artikel
|
| 12 |
Electron transport modeling in the inversion layers of 4H and 6H–SiC MOSFETs on implanted regions
|
Zeng, Yu Anne
|
|
2005
|
49 |
6 |
p. 1017-1028
12 p.
|
artikel
|
| 13 |
Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s
|
Principato, F.
|
|
2005
|
49 |
6 |
p. 915-922
8 p.
|
artikel
|
| 14 |
High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N+ implant
|
Chen, Mary
|
|
2005
|
49 |
6 |
p. 981-985
5 p.
|
artikel
|
| 15 |
Hooge noise parameter of epitaxial n-GaN on sapphire
|
Tanuma, Nobuhisa
|
|
2005
|
49 |
6 |
p. 865-870
6 p.
|
artikel
|
| 16 |
Identical resonant features of THz photoconductivity and plasmon absorption in a grid-gated double-quantum well FET
|
Popov, V.V.
|
|
2005
|
49 |
6 |
p. 1049-1051
3 p.
|
artikel
|
| 17 |
Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
|
Haartman, M. von
|
|
2005
|
49 |
6 |
p. 907-914
8 p.
|
artikel
|
| 18 |
Modeling MOSFET surface capacitance behavior under non-equilibrium
|
Kapoor, Abhishek
|
|
2005
|
49 |
6 |
p. 976-980
5 p.
|
artikel
|
| 19 |
Normal distribution of confinement energy from a photoluminescence line shape analysis in oxidized porous silicon
|
Chen, Songyan
|
|
2005
|
49 |
6 |
p. 940-944
5 p.
|
artikel
|
| 20 |
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature
|
Caddemi, A.
|
|
2005
|
49 |
6 |
p. 928-934
7 p.
|
artikel
|
| 21 |
Parameter sensitivity for optimal design of 65nm node double gate SOI transistors
|
Lim, Tao Chuan
|
|
2005
|
49 |
6 |
p. 1034-1043
10 p.
|
artikel
|
| 22 |
Preparation and gas-sensing properties of NiFe2O4 semiconductor materials
|
Yang, Liufang
|
|
2005
|
49 |
6 |
p. 1029-1033
5 p.
|
artikel
|
| 23 |
Temperature and field dependent mobility in pentacene-based thin film transistors
|
Zhu, Mo
|
|
2005
|
49 |
6 |
p. 884-888
5 p.
|
artikel
|
| 24 |
Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes
|
Karataş, Ş.
|
|
2005
|
49 |
6 |
p. 1052-1054
3 p.
|
artikel
|
| 25 |
The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
|
Leroy, W.P.
|
|
2005
|
49 |
6 |
p. 878-883
6 p.
|
artikel
|
| 26 |
The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology
|
Haugerud, Becca M.
|
|
2005
|
49 |
6 |
p. 986-990
5 p.
|
artikel
|
| 27 |
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells
|
Bayhan, Habibe
|
|
2005
|
49 |
6 |
p. 991-996
6 p.
|
artikel
|
| 28 |
Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
|
Maneux, C.
|
|
2005
|
49 |
6 |
p. 956-964
9 p.
|
artikel
|
| 29 |
Two relaxation mechanisms in (Sr1−1.5x Bi x )TiO3 (x:0.0067)
|
Şentürk, E.
|
|
2005
|
49 |
6 |
p. 935-939
5 p.
|
artikel
|
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