| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed-form DC model for long-channel thin-film transistors with gate voltage-dependent mobility characteristics
|
Hoffman, R.L.
|
|
2005
|
49 |
4 |
p. 648-653
6 p.
|
artikel
|
| 2 |
A compact model describing the effect of p-buffer layer on the I–V characteristics of 4H-SiC power MESFETs
|
Yang, Linan
|
|
2005
|
49 |
4 |
p. 517-523
7 p.
|
artikel
|
| 3 |
AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers
|
Gillespie, J.
|
|
2005
|
49 |
4 |
p. 670-672
3 p.
|
artikel
|
| 4 |
Analytical modeling of a DCFL inverter using normally-off GaAs MESFET’s under dark and illuminated conditions
|
Jit, S.
|
|
2005
|
49 |
4 |
p. 628-633
6 p.
|
artikel
|
| 5 |
A semi-empirical approach to study a high performance Poly-Si TFT with selectively floating a:Si layer
|
Bindra, Simrata
|
|
2005
|
49 |
4 |
p. 558-561
4 p.
|
artikel
|
| 6 |
Band offsets in heterostructures by spin splittings
|
Ekpunobi, A.J.
|
|
2005
|
49 |
4 |
p. 667-669
3 p.
|
artikel
|
| 7 |
DC conduction properties of Gadolinium–Indium oxide films deposited on Si(100)
|
Dakhel, A.A.
|
|
2005
|
49 |
4 |
p. 562-566
5 p.
|
artikel
|
| 8 |
Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates
|
Maikap, S.
|
|
2005
|
49 |
4 |
p. 524-528
5 p.
|
artikel
|
| 9 |
Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs
|
Ahsan, A.K.M.
|
|
2005
|
49 |
4 |
p. 654-662
9 p.
|
artikel
|
| 10 |
Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
|
Rudenko, T.E.
|
|
2005
|
49 |
4 |
p. 545-553
9 p.
|
artikel
|
| 11 |
Modeling the DC gain of 4H–SiC bipolar transistors as a function of surface recombination velocity
|
Fardi, H.Z.
|
|
2005
|
49 |
4 |
p. 663-666
4 p.
|
artikel
|
| 12 |
Nanoscale CMOS: potential nonclassical technologies versus a hypothetical bulk-silicon technology
|
Kim, Seung-Hwan
|
|
2005
|
49 |
4 |
p. 595-605
11 p.
|
artikel
|
| 13 |
On functional potentiality of photodiode structures with a high-resistance layer
|
Khudaverdyan, S.Kh.
|
|
2005
|
49 |
4 |
p. 634-639
6 p.
|
artikel
|
| 14 |
On the significance of the surface states in isolated Al x Ga1−x N/GaN heterostructures
|
Casao Pérez, Juan Antonio
|
|
2005
|
49 |
4 |
p. 612-617
6 p.
|
artikel
|
| 15 |
Optimization of base-to-emitter spacer thickness to maximize the frequency response of bipolar transistors
|
Lee, Wai-Kit
|
|
2005
|
49 |
4 |
p. 554-557
4 p.
|
artikel
|
| 16 |
Organic thin film transistors: a DC/dynamic analytical model
|
Calvetti, E.
|
|
2005
|
49 |
4 |
p. 567-577
11 p.
|
artikel
|
| 17 |
Physical study of the avalanche breakdown phenomenon in HEMTs
|
Elkhou, M.
|
|
2005
|
49 |
4 |
p. 535-544
10 p.
|
artikel
|
| 18 |
Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
|
Sochacki, Mariusz
|
|
2005
|
49 |
4 |
p. 585-590
6 p.
|
artikel
|
| 19 |
Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy
|
Waite, A.M.
|
|
2005
|
49 |
4 |
p. 529-534
6 p.
|
artikel
|
| 20 |
Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs
|
Ortiz-Conde, Adelmo
|
|
2005
|
49 |
4 |
p. 640-647
8 p.
|
artikel
|
| 21 |
SiGe HMOSFET monolithic inverting current mirror
|
Michelakis, K.
|
|
2005
|
49 |
4 |
p. 591-594
4 p.
|
artikel
|
| 22 |
Stability of hydrogenated amorphous silicon thin film transistors on polyimide substrates
|
Kavak, H.
|
|
2005
|
49 |
4 |
p. 578-584
7 p.
|
artikel
|
| 23 |
Transient enhanced diffusion of B at low temperatures under extrinsic conditions
|
Giles, L.F.
|
|
2005
|
49 |
4 |
p. 618-627
10 p.
|
artikel
|
| 24 |
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
|
Ru, Guo-Ping
|
|
2005
|
49 |
4 |
p. 606-611
6 p.
|
artikel
|
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