| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
|
Sallese, Jean-Michel
|
|
2005
|
49 |
3 |
p. 485-489
5 p.
|
artikel
|
| 2 |
A new constant-current technique for MOSFET parameter extraction
|
Lu, Chao-Yang
|
|
2005
|
49 |
3 |
p. 351-356
6 p.
|
artikel
|
| 3 |
A new LIGBT structure to suppress substrate currents in a junction isolated technology
|
Bakeroot, B.
|
|
2005
|
49 |
3 |
p. 363-367
5 p.
|
artikel
|
| 4 |
A new scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)
|
Chiang, T.K.
|
|
2005
|
49 |
3 |
p. 317-322
6 p.
|
artikel
|
| 5 |
A parametric study for Si p+nn+ diodes in picosecond closing switch applications
|
Zhang, Fei
|
|
2005
|
49 |
3 |
p. 399-403
5 p.
|
artikel
|
| 6 |
A precision physical model for three terminal diffused or ion-implanted resistors
|
Qian, MingRui
|
|
2005
|
49 |
3 |
p. 323-327
5 p.
|
artikel
|
| 7 |
A study of remote plasma nitrided nGaAs/Au Schottky barrier
|
Ambrico, M.
|
|
2005
|
49 |
3 |
p. 413-419
7 p.
|
artikel
|
| 8 |
Body-tied triple-gate NMOSFET fabrication using bulk Si wafer
|
Park, Tai-su
|
|
2005
|
49 |
3 |
p. 377-383
7 p.
|
artikel
|
| 9 |
Characterization of sub-100nm CMOS process using screening experiment technique
|
Srinivasaiah, H.C.
|
|
2005
|
49 |
3 |
p. 431-436
6 p.
|
artikel
|
| 10 |
Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations
|
Chang, Shu-Cheng
|
|
2005
|
49 |
3 |
p. 437-444
8 p.
|
artikel
|
| 11 |
Effective resistivity of fully-processed SOI substrates
|
Lederer, D.
|
|
2005
|
49 |
3 |
p. 491-496
6 p.
|
artikel
|
| 12 |
Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I–V characteristics
|
Ortiz-Conde, Adelmo
|
|
2005
|
49 |
3 |
p. 465-472
8 p.
|
artikel
|
| 13 |
Giant suppression of avalanche noise in GaN double-drift impact diodes
|
Reklaitis, A.
|
|
2005
|
49 |
3 |
p. 405-408
4 p.
|
artikel
|
| 14 |
Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors
|
Tassis, D.H.
|
|
2005
|
49 |
3 |
p. 513-515
3 p.
|
artikel
|
| 15 |
Interfaces and defects of high-K oxides on silicon
|
Robertson, J.
|
|
2005
|
49 |
3 |
p. 283-293
11 p.
|
artikel
|
| 16 |
Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process
|
Shim, Sun Il
|
|
2005
|
49 |
3 |
p. 497-504
8 p.
|
artikel
|
| 17 |
Modeling of single-π equivalent circuit for on-chip spiral inductors
|
Huang, F.Y.
|
|
2005
|
49 |
3 |
p. 473-478
6 p.
|
artikel
|
| 18 |
Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application
|
Tsai, Jung-Hui
|
|
2005
|
49 |
3 |
p. 357-361
5 p.
|
artikel
|
| 19 |
New varactors and high-power high-frequency capacitive devices
|
Ioffe, Valery M.
|
|
2005
|
49 |
3 |
p. 385-397
13 p.
|
artikel
|
| 20 |
Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts
|
Su, Y.K.
|
|
2005
|
49 |
3 |
p. 459-463
5 p.
|
artikel
|
| 21 |
On the optimization and design of SiGe HBT cascode low-noise amplifiers
|
Liang, Qingqing
|
|
2005
|
49 |
3 |
p. 329-341
13 p.
|
artikel
|
| 22 |
Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation
|
Bhatnagar, P.
|
|
2005
|
49 |
3 |
p. 453-458
6 p.
|
artikel
|
| 23 |
Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiN x
|
Jin, Z.
|
|
2005
|
49 |
3 |
p. 409-412
4 p.
|
artikel
|
| 24 |
Photocapacitance of GaAs thin-film epitaxial structures
|
Gorev, Nikolai B.
|
|
2005
|
49 |
3 |
p. 343-349
7 p.
|
artikel
|
| 25 |
Polymeric integrated AC follower circuit with a JFET as an active device
|
Liu, Yuxin
|
|
2005
|
49 |
3 |
p. 445-448
4 p.
|
artikel
|
| 26 |
Recombination efficiency in bilayer organic light-emitting diode
|
Mazhari, B.
|
|
2005
|
49 |
3 |
p. 311-315
5 p.
|
artikel
|
| 27 |
Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs
|
An, Xia
|
|
2005
|
49 |
3 |
p. 479-483
5 p.
|
artikel
|
| 28 |
Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas
|
Goghero, D.
|
|
2005
|
49 |
3 |
p. 369-376
8 p.
|
artikel
|
| 29 |
Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices
|
Cui, Zhi
|
|
2005
|
49 |
3 |
p. 505-511
7 p.
|
artikel
|
| 30 |
Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches
|
Hsin, Y.M.
|
|
2005
|
49 |
3 |
p. 295-300
6 p.
|
artikel
|
| 31 |
Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor
|
Sehgal, Amit
|
|
2005
|
49 |
3 |
p. 301-309
9 p.
|
artikel
|
| 32 |
Thermally-driven motion of current filaments in ESD protection devices
|
Pogany, D.
|
|
2005
|
49 |
3 |
p. 421-429
9 p.
|
artikel
|
| 33 |
Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation
|
Mahapatra, R.
|
|
2005
|
49 |
3 |
p. 449-452
4 p.
|
artikel
|
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