| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CMOS active pixel sensor based DNA micro-array with nano-metallic particles detection protocol
|
Wang, Yijin
|
|
2005
|
49 |
12 |
p. 1933-1936
4 p.
|
artikel
|
| 2 |
A 765mW high-voltage switching ADSL line-driver
|
De Gezelle, V.
|
|
2005
|
49 |
12 |
p. 1947-1950
4 p.
|
artikel
|
| 3 |
An accurate and compact large signal model for III–V HBT devices
|
Issaoun, A.
|
|
2005
|
49 |
12 |
p. 1909-1916
8 p.
|
artikel
|
| 4 |
A new partial SOI power device structure with P-type buried layer
|
Duan, Baoxing
|
|
2005
|
49 |
12 |
p. 1965-1968
4 p.
|
artikel
|
| 5 |
Antimonide-based compound semiconductors for electronic devices: A review
|
Bennett, Brian R.
|
|
2005
|
49 |
12 |
p. 1875-1895
21 p.
|
artikel
|
| 6 |
A three-terminal planar selfgating device for nanoelectronic applications
|
Müller, T.
|
|
2005
|
49 |
12 |
p. 1990-1995
6 p.
|
artikel
|
| 7 |
Author Index
|
|
|
2005
|
49 |
12 |
p. III-VIII
nvt p.
|
artikel
|
| 8 |
Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation
|
Xia, Zhiliang
|
|
2005
|
49 |
12 |
p. 1942-1946
5 p.
|
artikel
|
| 9 |
Channel electron mobility in 4H–SiC lateral junction field effect transistors
|
Sannuti, P.
|
|
2005
|
49 |
12 |
p. 1900-1904
5 p.
|
artikel
|
| 10 |
dV/dt effect in high-voltage (1.5kV) 4H–SiC thyristors
|
Yurkov, Sergey N.
|
|
2005
|
49 |
12 |
p. 2011-2015
5 p.
|
artikel
|
| 11 |
Efficient white organic light-emitting device based on a thin layer of hole-transporting host with rubrene dopant
|
Li, Mingtao
|
|
2005
|
49 |
12 |
p. 1956-1960
5 p.
|
artikel
|
| 12 |
Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices
|
Li, P.
|
|
2005
|
49 |
12 |
p. 2002-2005
4 p.
|
artikel
|
| 13 |
Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy
|
Ciechonski, R.R.
|
|
2005
|
49 |
12 |
p. 1917-1920
4 p.
|
artikel
|
| 14 |
High performance GaAs MESFETs with molecular implanted and optimized lowly-doped drain structure for maximized speed, gain and breakdown performance
|
Wohlmuth, Walter A.
|
|
2005
|
49 |
12 |
p. 1978-1985
8 p.
|
artikel
|
| 15 |
Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots
|
Song, June-O
|
|
2005
|
49 |
12 |
p. 1986-1989
4 p.
|
artikel
|
| 16 |
InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts
|
Su, Shui-Hsiang
|
|
2005
|
49 |
12 |
p. 1905-1908
4 p.
|
artikel
|
| 17 |
Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC
|
Chang, Shu-Cheng
|
|
2005
|
49 |
12 |
p. 1937-1941
5 p.
|
artikel
|
| 18 |
Keyword Index
|
|
|
2005
|
49 |
12 |
p. IX-XIII
nvt p.
|
artikel
|
| 19 |
Modeling Kirk effect of RESURF LDMOS
|
Sun, Zhilin
|
|
2005
|
49 |
12 |
p. 1896-1899
4 p.
|
artikel
|
| 20 |
New dielectric material system of Nd(Mg1/2Ti1/2)O3–CaTiO3 at microwave frequency
|
Huang, Cheng-Liang
|
|
2005
|
49 |
12 |
p. 1921-1924
4 p.
|
artikel
|
| 21 |
Numerical analysis of the cut-off frequency of ultra-small ballistic double-gate MOSFETs
|
Zhou, Song
|
|
2005
|
49 |
12 |
p. 1951-1955
5 p.
|
artikel
|
| 22 |
Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power
|
Liu, Jun-Qi
|
|
2005
|
49 |
12 |
p. 1961-1964
4 p.
|
artikel
|
| 23 |
SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering
|
Kudoh, Tsugutomo
|
|
2005
|
49 |
12 |
p. 2006-2010
5 p.
|
artikel
|
| 24 |
Simulation of a cobalt silicide/Si hetero-nanocrystal memory
|
Zhao, Dengtao
|
|
2005
|
49 |
12 |
p. 1974-1977
4 p.
|
artikel
|
| 25 |
Simulation prediction of electrothermal behaviors of ESD N/PMOS devices
|
Huang, Chih-Yao
|
|
2005
|
49 |
12 |
p. 1925-1932
8 p.
|
artikel
|
| 26 |
Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes
|
Pulfrey, D.L.
|
|
2005
|
49 |
12 |
p. 1969-1973
5 p.
|
artikel
|
| 27 |
The annealing effect for structural, optical and electrical properties of dysprosium–manganese oxide films grown on Si substrate
|
Dakhel, A.A.
|
|
2005
|
49 |
12 |
p. 1996-2001
6 p.
|
artikel
|
| 28 |
ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes
|
Shu, Xiongwen
|
|
2005
|
49 |
12 |
p. 2016-2017
2 p.
|
artikel
|
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