| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
|
de Souza, Michelly
|
|
2005
|
49 |
10 |
p. 1683-1692
10 p.
|
artikel
|
| 2 |
A comparative study of different contact resistance test structures dedicated to the power process technology
|
Oussalah, Slimane
|
|
2005
|
49 |
10 |
p. 1617-1622
6 p.
|
artikel
|
| 3 |
A modified transferred-electron high-field mobility model for GaN devices simulation
|
Turin, Valentin O.
|
|
2005
|
49 |
10 |
p. 1678-1682
5 p.
|
artikel
|
| 4 |
A scalable substrate network for compact modelling of deep trench insulated HBT
|
Fregonese, S.
|
|
2005
|
49 |
10 |
p. 1623-1631
9 p.
|
artikel
|
| 5 |
A spice-like reliability model for deep-submicron CMOS technology
|
Cui, Z.
|
|
2005
|
49 |
10 |
p. 1702-1707
6 p.
|
artikel
|
| 6 |
A sum-over-paths impulse-response moment-extraction algorithm for RLC IC-interconnect networks
|
Le Coz, Y.L.
|
|
2005
|
49 |
10 |
p. 1604-1616
13 p.
|
artikel
|
| 7 |
A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs
|
Dawei, Zhang
|
|
2005
|
49 |
10 |
p. 1581-1588
8 p.
|
artikel
|
| 8 |
Continuous wave operation of a 250mW AlGaAs laser diode
|
Kim, T.G.
|
|
2005
|
49 |
10 |
p. 1674-1677
4 p.
|
artikel
|
| 9 |
Effects of dielectric dispersion in multiplier chips
|
Maity, Tanmoy
|
|
2005
|
49 |
10 |
p. 1649-1654
6 p.
|
artikel
|
| 10 |
Electron trapping effects in C- and Fe-doped GaN and AlGaN
|
Lopatiuk, Olena
|
|
2005
|
49 |
10 |
p. 1662-1668
7 p.
|
artikel
|
| 11 |
Floating contact transmission line modelling: An improved method for ohmic contact resistance measurement
|
Lijadi, Melania
|
|
2005
|
49 |
10 |
p. 1655-1661
7 p.
|
artikel
|
| 12 |
Forward-current electroluminescence from GaN/ZnO double heterostructure diode
|
Alivov, Ya.I.
|
|
2005
|
49 |
10 |
p. 1693-1696
4 p.
|
artikel
|
| 13 |
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
|
Pavanello, Marcelo Antonio
|
|
2005
|
49 |
10 |
p. 1569-1575
7 p.
|
artikel
|
| 14 |
Impact of plasma pre-treatment before SiN x passivation on AlGaN/GaN HFETs electrical traps
|
Guhel, Y.
|
|
2005
|
49 |
10 |
p. 1589-1594
6 p.
|
artikel
|
| 15 |
Modeling and simulation of STacked Gate Oxide (STGO) architecture in Silicon-On-Nothing (SON) MOSFET
|
Kasturi, Poonam
|
|
2005
|
49 |
10 |
p. 1639-1648
10 p.
|
artikel
|
| 16 |
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
|
Mooney, P.M.
|
|
2005
|
49 |
10 |
p. 1669-1673
5 p.
|
artikel
|
| 17 |
Novel structure of white organic electroluminescent devices
|
Tsou, Chuan-Cheng
|
|
2005
|
49 |
10 |
p. 1595-1598
4 p.
|
artikel
|
| 18 |
Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes
|
Crouse, David
|
|
2005
|
49 |
10 |
p. 1697-1701
5 p.
|
artikel
|
| 19 |
Performances of CYTOPTM low-k dielectric layer bridged GaAs-based enhancement mode pHEMT for wireless power application
|
Lin, C.H.
|
|
2005
|
49 |
10 |
p. 1708-1712
5 p.
|
artikel
|
| 20 |
Prediction of plasma processes using neural network and genetic algorithm
|
Kim, Byungwhan
|
|
2005
|
49 |
10 |
p. 1576-1580
5 p.
|
artikel
|
| 21 |
Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
|
Arulkumaran, S.
|
|
2005
|
49 |
10 |
p. 1632-1638
7 p.
|
artikel
|
| 22 |
The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection
|
Huang, Chia-Hong
|
|
2005
|
49 |
10 |
p. 1599-1603
5 p.
|
artikel
|
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