| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Buried-channel SiGe HMODFET device potential for micropower applications
|
Vilches, A
|
|
2004
|
48 |
8 |
p. 1423-1431
9 p.
|
article
|
| 2 |
Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
|
Fobelets, K.
|
|
2004
|
48 |
8 |
p. 1401-1406
6 p.
|
article
|
| 3 |
Contact metallization on strained-Si
|
Saha, A.R
|
|
2004
|
48 |
8 |
p. 1391-1399
9 p.
|
article
|
| 4 |
Control over strain relaxation in Si-based heterostructures
|
Izyumskaya, Natalia F
|
|
2004
|
48 |
8 |
p. 1265-1278
14 p.
|
article
|
| 5 |
Engineering strained silicon on insulator wafers with the Smart CutTM technology
|
Ghyselen, B.
|
|
2004
|
48 |
8 |
p. 1285-1296
12 p.
|
article
|
| 6 |
Gate dielectrics on strained-Si/SiGe heterolayers
|
Maiti, C.K.
|
|
2004
|
48 |
8 |
p. 1369-1389
21 p.
|
article
|
| 7 |
Investigation of strained Si/SiGe devices by MC simulation
|
Jungemann, C.
|
|
2004
|
48 |
8 |
p. 1417-1422
6 p.
|
article
|
| 8 |
Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications
|
Kallfass, Ingmar
|
|
2004
|
48 |
8 |
p. 1433-1441
9 p.
|
article
|
| 9 |
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
|
Isella, G.
|
|
2004
|
48 |
8 |
p. 1317-1323
7 p.
|
article
|
| 10 |
Monte Carlo modeling of the electron mobility in strained Si1−x Ge x layers on arbitrarily oriented Si1−yGey substrates
|
Smirnov, S.
|
|
2004
|
48 |
8 |
p. 1325-1335
11 p.
|
article
|
| 11 |
Power analysis of strained-Si devices/circuits
|
Kim, Keunwoo
|
|
2004
|
48 |
8 |
p. 1453-1460
8 p.
|
article
|
| 12 |
Relaxation mechanism of low temperature SiGe/Si(001) buffer layers
|
Vescan, Lili
|
|
2004
|
48 |
8 |
p. 1279-1284
6 p.
|
article
|
| 13 |
Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices
|
Delhougne, R.
|
|
2004
|
48 |
8 |
p. 1307-1316
10 p.
|
article
|
| 14 |
Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs
|
Roldán, J.B.
|
|
2004
|
48 |
8 |
p. 1347-1355
9 p.
|
article
|
| 15 |
Special issue on strained-si heterostructures and devices
|
Maiti, Chinmay K
|
|
2004
|
48 |
8 |
p. 1255-
1 p.
|
article
|
| 16 |
Strain adjustment with thin virtual substrates
|
Kasper, E.
|
|
2004
|
48 |
8 |
p. 1257-1263
7 p.
|
article
|
| 17 |
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
|
Enciso Aguilar, M.
|
|
2004
|
48 |
8 |
p. 1443-1452
10 p.
|
article
|
| 18 |
Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges
|
Chattopadhyay, S.
|
|
2004
|
48 |
8 |
p. 1407-1416
10 p.
|
article
|
| 19 |
Strained Si on insulator technology: from materials to devices
|
Langdo, T.A
|
|
2004
|
48 |
8 |
p. 1357-1367
11 p.
|
article
|
| 20 |
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
|
Taraschi, Gianni
|
|
2004
|
48 |
8 |
p. 1297-1305
9 p.
|
article
|
| 21 |
The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs
|
Watling, J.R.
|
|
2004
|
48 |
8 |
p. 1337-1346
10 p.
|
article
|
| 22 |
WHERE ARE WE HEADING?
|
Maiti, C.K
|
|
2004
|
48 |
8 |
p. 1253-
1 p.
|
article
|
Journal description