| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
|
Hakim, M.M.A.
|
|
2004
|
48 |
7 |
p. 1095-1100
6 p.
|
artikel
|
| 2 |
Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method
|
Park, Ji-Sun
|
|
2004
|
48 |
7 |
p. 1163-1168
6 p.
|
artikel
|
| 3 |
Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded Al x Ga1−x As layer at emitter/base heterojunction
|
Cheng, Shiou-Ying
|
|
2004
|
48 |
7 |
p. 1087-1094
8 p.
|
artikel
|
| 4 |
A seven-parameter nonlinear I–V characteristics model for sub-μm range GaAs MESFETs
|
Islam, M.S.
|
|
2004
|
48 |
7 |
p. 1111-1117
7 p.
|
artikel
|
| 5 |
Conduction type change with annealing in thin silicon-on-insulator wafers
|
Shibata, Yoshitake
|
|
2004
|
48 |
7 |
p. 1249-1252
4 p.
|
artikel
|
| 6 |
Design considerations for novel device architecture: hetero-material double-gate (HEM-DG) MOSFET with sub-100 nm gate length
|
Saxena, Manoj
|
|
2004
|
48 |
7 |
p. 1169-1174
6 p.
|
artikel
|
| 7 |
Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors
|
Chew, K.W.
|
|
2004
|
48 |
7 |
p. 1101-1109
9 p.
|
artikel
|
| 8 |
Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test
|
Pinardi, Kuntjoro
|
|
2004
|
48 |
7 |
p. 1119-1126
8 p.
|
artikel
|
| 9 |
Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs
|
Cha, Ho-Young
|
|
2004
|
48 |
7 |
p. 1233-1237
5 p.
|
artikel
|
| 10 |
Fabrication of trench-gate power MOSFETs by using a dual doped body region
|
Juang, M.H.
|
|
2004
|
48 |
7 |
p. 1079-1085
7 p.
|
artikel
|
| 11 |
Further improvements in equivalent-circuit model with levelized incomplete LU factorization for mixed-level semiconductor device and circuit simulation
|
Dai, Jing-Fu
|
|
2004
|
48 |
7 |
p. 1181-1188
8 p.
|
artikel
|
| 12 |
Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band
|
Oxley, C.H.
|
|
2004
|
48 |
7 |
p. 1197-1203
7 p.
|
artikel
|
| 13 |
Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing
|
Cassé, M.
|
|
2004
|
48 |
7 |
p. 1243-1247
5 p.
|
artikel
|
| 14 |
Germanium profile design options for SiGe LEC HBTs
|
Schroter, Michael
|
|
2004
|
48 |
7 |
p. 1133-1146
14 p.
|
artikel
|
| 15 |
High reliability GaN-based light-emitting diodes with photo-enhanced wet etching
|
Chen, Lung-Chien
|
|
2004
|
48 |
7 |
p. 1239-1242
4 p.
|
artikel
|
| 16 |
Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
|
Rafı́, J.M.
|
|
2004
|
48 |
7 |
p. 1211-1221
11 p.
|
artikel
|
| 17 |
Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells
|
Cho, Caleb Yu-Sheng
|
|
2004
|
48 |
7 |
p. 1189-1195
7 p.
|
artikel
|
| 18 |
Modelling and characterisation of the OCVD response at an arbitrary time and injection level
|
Bellone, Salvatore
|
|
2004
|
48 |
7 |
p. 1127-1131
5 p.
|
artikel
|
| 19 |
Observation of anomalous leakage increase of narrow and short BCPMOS
|
Xu, Y.Z.
|
|
2004
|
48 |
7 |
p. 1175-1179
5 p.
|
artikel
|
| 20 |
Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions
|
Kalna, K.
|
|
2004
|
48 |
7 |
p. 1223-1232
10 p.
|
artikel
|
| 21 |
Schottky barrier characteristics of ternary silicide Co1−x Ni x Si2 on n-Si(100) contacts formed by solid phase reaction of multilayer
|
Zhu, Shiyang
|
|
2004
|
48 |
7 |
p. 1205-1209
5 p.
|
artikel
|
| 22 |
Self-consistent simulations of mesoscopic devices operating under a finite bias
|
Forsberg, Erik
|
|
2004
|
48 |
7 |
p. 1147-1154
8 p.
|
artikel
|
| 23 |
Source-gated transistors in hydrogenated amorphous silicon
|
Shannon, J.M.
|
|
2004
|
48 |
7 |
p. 1155-1161
7 p.
|
artikel
|
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