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                             23 results found
no title author magazine year volume issue page(s) type
1 Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics Hakim, M.M.A.
2004
48 7 p. 1095-1100
6 p.
article
2 Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method Park, Ji-Sun
2004
48 7 p. 1163-1168
6 p.
article
3 Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded Al x Ga1−x As layer at emitter/base heterojunction Cheng, Shiou-Ying
2004
48 7 p. 1087-1094
8 p.
article
4 A seven-parameter nonlinear I–V characteristics model for sub-μm range GaAs MESFETs Islam, M.S.
2004
48 7 p. 1111-1117
7 p.
article
5 Conduction type change with annealing in thin silicon-on-insulator wafers Shibata, Yoshitake
2004
48 7 p. 1249-1252
4 p.
article
6 Design considerations for novel device architecture: hetero-material double-gate (HEM-DG) MOSFET with sub-100 nm gate length Saxena, Manoj
2004
48 7 p. 1169-1174
6 p.
article
7 Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors Chew, K.W.
2004
48 7 p. 1101-1109
9 p.
article
8 Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test Pinardi, Kuntjoro
2004
48 7 p. 1119-1126
8 p.
article
9 Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs Cha, Ho-Young
2004
48 7 p. 1233-1237
5 p.
article
10 Fabrication of trench-gate power MOSFETs by using a dual doped body region Juang, M.H.
2004
48 7 p. 1079-1085
7 p.
article
11 Further improvements in equivalent-circuit model with levelized incomplete LU factorization for mixed-level semiconductor device and circuit simulation Dai, Jing-Fu
2004
48 7 p. 1181-1188
8 p.
article
12 Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band Oxley, C.H.
2004
48 7 p. 1197-1203
7 p.
article
13 Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing Cassé, M.
2004
48 7 p. 1243-1247
5 p.
article
14 Germanium profile design options for SiGe LEC HBTs Schroter, Michael
2004
48 7 p. 1133-1146
14 p.
article
15 High reliability GaN-based light-emitting diodes with photo-enhanced wet etching Chen, Lung-Chien
2004
48 7 p. 1239-1242
4 p.
article
16 Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs Rafı́, J.M.
2004
48 7 p. 1211-1221
11 p.
article
17 Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells Cho, Caleb Yu-Sheng
2004
48 7 p. 1189-1195
7 p.
article
18 Modelling and characterisation of the OCVD response at an arbitrary time and injection level Bellone, Salvatore
2004
48 7 p. 1127-1131
5 p.
article
19 Observation of anomalous leakage increase of narrow and short BCPMOS Xu, Y.Z.
2004
48 7 p. 1175-1179
5 p.
article
20 Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions Kalna, K.
2004
48 7 p. 1223-1232
10 p.
article
21 Schottky barrier characteristics of ternary silicide Co1−x Ni x Si2 on n-Si(100) contacts formed by solid phase reaction of multilayer Zhu, Shiyang
2004
48 7 p. 1205-1209
5 p.
article
22 Self-consistent simulations of mesoscopic devices operating under a finite bias Forsberg, Erik
2004
48 7 p. 1147-1154
8 p.
article
23 Source-gated transistors in hydrogenated amorphous silicon Shannon, J.M.
2004
48 7 p. 1155-1161
7 p.
article
                             23 results found
 
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