| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced SOI MOSFETs with buried alumina and ground plane: self-heating and short-channel effects
|
Oshima, K.
|
|
2004
|
48 |
6 |
p. 907-917
11 p.
|
artikel
|
| 2 |
Analysis of heavy-ion induced charge collection mechanisms in SOI circuits
|
Schwank, J.R
|
|
2004
|
48 |
6 |
p. 1027-1044
18 p.
|
artikel
|
| 3 |
A process/physics-based compact model for nonclassical CMOS device and circuit design
|
Fossum, J.G.
|
|
2004
|
48 |
6 |
p. 919-926
8 p.
|
artikel
|
| 4 |
Blue sky in SOI: new opportunities for quantum and hot-electron devices
|
Luryi, S.
|
|
2004
|
48 |
6 |
p. 877-885
9 p.
|
artikel
|
| 5 |
Composite ULP diode fabrication, modelling and applications in multi-V th FD SOI CMOS technology
|
Levacq, David
|
|
2004
|
48 |
6 |
p. 1017-1025
9 p.
|
artikel
|
| 6 |
Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study
|
Hasan, Sayed
|
|
2004
|
48 |
6 |
p. 867-875
9 p.
|
artikel
|
| 7 |
Double gate silicon on insulator transistors. A Monte Carlo study
|
Gámiz, F.
|
|
2004
|
48 |
6 |
p. 937-945
9 p.
|
artikel
|
| 8 |
Emerging silicon-on-nothing (SON) devices technology
|
Monfray, S.
|
|
2004
|
48 |
6 |
p. 887-895
9 p.
|
artikel
|
| 9 |
Fully depleted SOI process and device technology for digital and RF applications
|
Ichikawa, F.
|
|
2004
|
48 |
6 |
p. 999-1006
8 p.
|
artikel
|
| 10 |
Laterally asymmetric channel engineering in fully depleted double gate SOI MOSFETs for high performance analog applications
|
Kranti, Abhinav
|
|
2004
|
48 |
6 |
p. 947-959
13 p.
|
artikel
|
| 11 |
Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation
|
Esseni, David
|
|
2004
|
48 |
6 |
p. 927-936
10 p.
|
artikel
|
| 12 |
Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs
|
Dieudonné, François
|
|
2004
|
48 |
6 |
p. 985-997
13 p.
|
artikel
|
| 13 |
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
|
Chan, Mansun
|
|
2004
|
48 |
6 |
p. 969-978
10 p.
|
artikel
|
| 14 |
Multiple-gate SOI MOSFETs
|
Colinge, Jean-Pierre
|
|
2004
|
48 |
6 |
p. 897-905
9 p.
|
artikel
|
| 15 |
Nanoscale SOI MOSFETs: a comparison of two options
|
Walls, Thomas J.
|
|
2004
|
48 |
6 |
p. 857-865
9 p.
|
artikel
|
| 16 |
New SOI lateral power devices with trench oxide
|
Park, J.M.
|
|
2004
|
48 |
6 |
p. 1007-1015
9 p.
|
artikel
|
| 17 |
[No title]
|
Cristoloveanu, Sorin
|
|
2004
|
48 |
6 |
p. 855-
1 p.
|
artikel
|
| 18 |
Qualification of 300 mm SOI CMOS substrate material: readiness for development and manufacturing
|
Hovel, H.
|
|
2004
|
48 |
6 |
p. 1065-1072
8 p.
|
artikel
|
| 19 |
Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control
|
Numata, Toshinori
|
|
2004
|
48 |
6 |
p. 979-984
6 p.
|
artikel
|
| 20 |
Requirements for ultra-thin-film devices and new materials for the CMOS roadmap
|
Fenouillet-Beranger, C.
|
|
2004
|
48 |
6 |
p. 961-967
7 p.
|
artikel
|
| 21 |
Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates
|
Maleville, Christophe
|
|
2004
|
48 |
6 |
p. 1055-1063
9 p.
|
artikel
|
| 22 |
Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation
|
Simoen, E.
|
|
2004
|
48 |
6 |
p. 1045-1054
10 p.
|
artikel
|
| 23 |
Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates
|
Uematsu, M.
|
|
2004
|
48 |
6 |
p. 1073-1078
6 p.
|
artikel
|
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