nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advanced SOI MOSFETs with buried alumina and ground plane: self-heating and short-channel effects
|
Oshima, K. |
|
2004 |
48 |
6 |
p. 907-917 11 p. |
artikel |
2 |
Analysis of heavy-ion induced charge collection mechanisms in SOI circuits
|
Schwank, J.R |
|
2004 |
48 |
6 |
p. 1027-1044 18 p. |
artikel |
3 |
A process/physics-based compact model for nonclassical CMOS device and circuit design
|
Fossum, J.G. |
|
2004 |
48 |
6 |
p. 919-926 8 p. |
artikel |
4 |
Blue sky in SOI: new opportunities for quantum and hot-electron devices
|
Luryi, S. |
|
2004 |
48 |
6 |
p. 877-885 9 p. |
artikel |
5 |
Composite ULP diode fabrication, modelling and applications in multi-V th FD SOI CMOS technology
|
Levacq, David |
|
2004 |
48 |
6 |
p. 1017-1025 9 p. |
artikel |
6 |
Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study
|
Hasan, Sayed |
|
2004 |
48 |
6 |
p. 867-875 9 p. |
artikel |
7 |
Double gate silicon on insulator transistors. A Monte Carlo study
|
Gámiz, F. |
|
2004 |
48 |
6 |
p. 937-945 9 p. |
artikel |
8 |
Emerging silicon-on-nothing (SON) devices technology
|
Monfray, S. |
|
2004 |
48 |
6 |
p. 887-895 9 p. |
artikel |
9 |
Fully depleted SOI process and device technology for digital and RF applications
|
Ichikawa, F. |
|
2004 |
48 |
6 |
p. 999-1006 8 p. |
artikel |
10 |
Laterally asymmetric channel engineering in fully depleted double gate SOI MOSFETs for high performance analog applications
|
Kranti, Abhinav |
|
2004 |
48 |
6 |
p. 947-959 13 p. |
artikel |
11 |
Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation
|
Esseni, David |
|
2004 |
48 |
6 |
p. 927-936 10 p. |
artikel |
12 |
Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs
|
Dieudonné, François |
|
2004 |
48 |
6 |
p. 985-997 13 p. |
artikel |
13 |
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
|
Chan, Mansun |
|
2004 |
48 |
6 |
p. 969-978 10 p. |
artikel |
14 |
Multiple-gate SOI MOSFETs
|
Colinge, Jean-Pierre |
|
2004 |
48 |
6 |
p. 897-905 9 p. |
artikel |
15 |
Nanoscale SOI MOSFETs: a comparison of two options
|
Walls, Thomas J. |
|
2004 |
48 |
6 |
p. 857-865 9 p. |
artikel |
16 |
New SOI lateral power devices with trench oxide
|
Park, J.M. |
|
2004 |
48 |
6 |
p. 1007-1015 9 p. |
artikel |
17 |
[No title]
|
Cristoloveanu, Sorin |
|
2004 |
48 |
6 |
p. 855- 1 p. |
artikel |
18 |
Qualification of 300 mm SOI CMOS substrate material: readiness for development and manufacturing
|
Hovel, H. |
|
2004 |
48 |
6 |
p. 1065-1072 8 p. |
artikel |
19 |
Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control
|
Numata, Toshinori |
|
2004 |
48 |
6 |
p. 979-984 6 p. |
artikel |
20 |
Requirements for ultra-thin-film devices and new materials for the CMOS roadmap
|
Fenouillet-Beranger, C. |
|
2004 |
48 |
6 |
p. 961-967 7 p. |
artikel |
21 |
Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates
|
Maleville, Christophe |
|
2004 |
48 |
6 |
p. 1055-1063 9 p. |
artikel |
22 |
Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation
|
Simoen, E. |
|
2004 |
48 |
6 |
p. 1045-1054 10 p. |
artikel |
23 |
Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates
|
Uematsu, M. |
|
2004 |
48 |
6 |
p. 1073-1078 6 p. |
artikel |