| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
|
Prégaldiny, Fabien
|
|
2004
|
48 |
5 |
p. 781-787
7 p.
|
artikel
|
| 2 |
A fast experimental method to measure the current–voltage characteristics of metal/semiconductor interfaces
|
Centurioni, E.
|
|
2004
|
48 |
5 |
p. 841-844
4 p.
|
artikel
|
| 3 |
Analytical models for the surface potential and electrical field distribution of bulk-silicon RESURF devices
|
Sun, Weifeng
|
|
2004
|
48 |
5 |
p. 799-805
7 p.
|
artikel
|
| 4 |
A physics based model for accumulation MOS capacitors
|
Otı́n, Aránzazu
|
|
2004
|
48 |
5 |
p. 773-779
7 p.
|
artikel
|
| 5 |
A theoretical study on stress sensitive differential amplifier (SSDA)
|
Li, Jingjing
|
|
2004
|
48 |
5 |
p. 715-719
5 p.
|
artikel
|
| 6 |
Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
|
Medjdoub, F.
|
|
2004
|
48 |
5 |
p. 683-688
6 p.
|
artikel
|
| 7 |
Comparative I(V) study of pure Schottky contacts used in spin-LEDs
|
Bobo, J.F.
|
|
2004
|
48 |
5 |
p. 845-849
5 p.
|
artikel
|
| 8 |
Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates
|
Henschel, W.
|
|
2004
|
48 |
5 |
p. 739-745
7 p.
|
artikel
|
| 9 |
Extrinsic parameter extraction and RF modelling of CMOS
|
Alam, M.S.
|
|
2004
|
48 |
5 |
p. 669-674
6 p.
|
artikel
|
| 10 |
Gate capacitance characteristics of a poly-Si thin film transistor
|
Bindra, Simrata
|
|
2004
|
48 |
5 |
p. 675-681
7 p.
|
artikel
|
| 11 |
Gateless AlGaN/GaN HEMT response to block co-polymers
|
Kang, B.S.
|
|
2004
|
48 |
5 |
p. 851-854
4 p.
|
artikel
|
| 12 |
Hot carrier quasi-ballistic transport in semiconductor devices
|
Childs, P.A.
|
|
2004
|
48 |
5 |
p. 765-772
8 p.
|
artikel
|
| 13 |
Impact of metallisation on resistor matching in a 0.35 μm analogue CMOS process
|
Lowe, Antony
|
|
2004
|
48 |
5 |
p. 697-704
8 p.
|
artikel
|
| 14 |
Impact of oxide damage on the light emission properties of MOS tunnel structures
|
Asli, N.
|
|
2004
|
48 |
5 |
p. 731-737
7 p.
|
artikel
|
| 15 |
Influence of magnetic field on 1/f noise and thermal noise in multi-terminal homogeneous semiconductor resistors and discrimination between the number fluctuation model and the mobility fluctuation model for 1/f noise in bulk semiconductors
|
Kim, Yong-Seok
|
|
2004
|
48 |
5 |
p. 641-654
14 p.
|
artikel
|
| 16 |
Mesostructured SnO2 as sensing material for gas sensors
|
Wang, Yude
|
|
2004
|
48 |
5 |
p. 627-632
6 p.
|
artikel
|
| 17 |
Noise modeling in fully depleted SOI MOSFETs
|
Pailloncy, G.
|
|
2004
|
48 |
5 |
p. 813-825
13 p.
|
artikel
|
| 18 |
Quantifying hole mobility degradation in pMOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlO x /Al2O3 gate stack
|
Persson, S.
|
|
2004
|
48 |
5 |
p. 721-729
9 p.
|
artikel
|
| 19 |
Red hybrid organic light-emitting device fabricated with molecularly doped polyimide thin film containing hole-transporting nanoparticles
|
Kim, Youngkyoo
|
|
2004
|
48 |
5 |
p. 633-640
8 p.
|
artikel
|
| 20 |
Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs
|
Lukyanchikova, N.
|
|
2004
|
48 |
5 |
p. 747-758
12 p.
|
artikel
|
| 21 |
SiGe resonance phase transistor: active transistor operation beyond the transit frequency f T
|
Kasper, E.
|
|
2004
|
48 |
5 |
p. 837-840
4 p.
|
artikel
|
| 22 |
Si+ ion implanted MPS bulk GaN diodes
|
Irokawa, Y.
|
|
2004
|
48 |
5 |
p. 827-830
4 p.
|
artikel
|
| 23 |
Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
|
Ankarcrona, J.
|
|
2004
|
48 |
5 |
p. 789-797
9 p.
|
artikel
|
| 24 |
Steady-state and transient characteristics of 10 kV 4H-SiC diodes
|
Levinshtein, Michael E.
|
|
2004
|
48 |
5 |
p. 807-811
5 p.
|
artikel
|
| 25 |
Study of improved reverse recovery in power transistor incorporating universal contact
|
Anand, R.S.
|
|
2004
|
48 |
5 |
p. 655-667
13 p.
|
artikel
|
| 26 |
The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim tunneling
|
Goldman, E.I.
|
|
2004
|
48 |
5 |
p. 831-836
6 p.
|
artikel
|
| 27 |
Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal
|
Miura, N
|
|
2004
|
48 |
5 |
p. 689-695
7 p.
|
artikel
|
| 28 |
Thermal noise in RF CMOS mixers
|
Tong, K.Y.
|
|
2004
|
48 |
5 |
p. 759-763
5 p.
|
artikel
|
| 29 |
The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages
|
Bauer, Friedhelm D.
|
|
2004
|
48 |
5 |
p. 705-714
10 p.
|
artikel
|
Tijdschrift beschrijving