| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
|
Prégaldiny, Fabien
|
|
2004
|
48 |
3 |
p. 427-435
9 p.
|
artikel
|
| 2 |
Analytical heat flow modeling of silicon-on-insulator devices
|
Cheng, Ming-C.
|
|
2004
|
48 |
3 |
p. 415-426
12 p.
|
artikel
|
| 3 |
A new simplified analytical short-channel threshold voltage model for InAlAs/InGaAs heterostructure InP based pulsed doped HEMT
|
Gupta, Ritesh
|
|
2004
|
48 |
3 |
p. 437-443
7 p.
|
artikel
|
| 4 |
60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs
|
Aktas, O.
|
|
2004
|
48 |
3 |
p. 471-475
5 p.
|
artikel
|
| 5 |
Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction double avalanche region IMPATT diode
|
Mishra, J.K.
|
|
2004
|
48 |
3 |
p. 401-408
8 p.
|
artikel
|
| 6 |
Determination of film and surface recombination in thin-film SOI devices using gated-diode technique
|
Rudenko, T.
|
|
2004
|
48 |
3 |
p. 389-399
11 p.
|
artikel
|
| 7 |
Dipole screening regime for pyroelectric and ferroelectric films and grains in semiconductor matrix
|
Dmitriev, A.P.
|
|
2004
|
48 |
3 |
p. 487-490
4 p.
|
artikel
|
| 8 |
Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon
|
Trellakis, A.
|
|
2004
|
48 |
3 |
p. 367-371
5 p.
|
artikel
|
| 9 |
Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1−y C y alloy layers
|
Quinones, E
|
|
2004
|
48 |
3 |
p. 379-387
9 p.
|
artikel
|
| 10 |
Exoelectron emission studies of trap spectrum in ultrathin amorphous Si3N4 films
|
Naich, M.
|
|
2004
|
48 |
3 |
p. 477-482
6 p.
|
artikel
|
| 11 |
Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime
|
Levinshtein, Michael E.
|
|
2004
|
48 |
3 |
p. 491-493
3 p.
|
artikel
|
| 12 |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
|
Kuo, H.C.
|
|
2004
|
48 |
3 |
p. 483-485
3 p.
|
artikel
|
| 13 |
Low temperature saturation of p–n junction laser beam induced current signals
|
Redfern, D.A.
|
|
2004
|
48 |
3 |
p. 409-414
6 p.
|
artikel
|
| 14 |
Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode
|
Srivastava, S.
|
|
2004
|
48 |
3 |
p. 461-470
10 p.
|
artikel
|
| 15 |
Occurrence of giant current fluctuations in 2D tunnel junction arrays
|
Cordan, A.S.
|
|
2004
|
48 |
3 |
p. 445-452
8 p.
|
artikel
|
| 16 |
Photoconductivity spectra from n-doped GaN: evidence for two distinct types of donors
|
Khan, F.
|
|
2004
|
48 |
3 |
p. 373-377
5 p.
|
artikel
|
| 17 |
Simulation of the substrate current in MOSFETs using a unified model for the Auger generation and recombination rate
|
Ishihara, Takamitsu
|
|
2004
|
48 |
3 |
p. 453-459
7 p.
|
artikel
|
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