| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accessing transmission-mode dispersion in super-prisms
|
Du, Y
|
|
2003
|
47 |
8 |
p. 1369-1377
9 p.
|
artikel
|
| 2 |
A simple quantum model for the MOS structure in accumulation mode
|
Vexler, M.I.
|
|
2003
|
47 |
8 |
p. 1283-1287
5 p.
|
artikel
|
| 3 |
A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET
|
Huang, Ru
|
|
2003
|
47 |
8 |
p. 1275-1282
8 p.
|
artikel
|
| 4 |
Avalanche transistor operation at extreme currents: physical reasons for low residual voltages
|
Vainshtein, Sergey N.
|
|
2003
|
47 |
8 |
p. 1255-1263
9 p.
|
artikel
|
| 5 |
Effect of post oxidation annealing on VCSEL performance
|
Das, N.C.
|
|
2003
|
47 |
8 |
p. 1359-1362
4 p.
|
artikel
|
| 6 |
Effects of first rapid thermal annealing temperature on Co silicide formation
|
Peng, H.J.
|
|
2003
|
47 |
8 |
p. 1249-1253
5 p.
|
artikel
|
| 7 |
Enhanced emission in organic light-emitting diodes using Ta2O5 buffer layers
|
Lu, Huei-Tzong
|
|
2003
|
47 |
8 |
p. 1409-1412
4 p.
|
artikel
|
| 8 |
Erratum to “Preface” [Solid-State Electronics 2003;47(3):385]
|
|
|
2003
|
47 |
8 |
p. 1417-
1 p.
|
artikel
|
| 9 |
GaInP/GaAs heterojunction bipolar transistor with carbon-doped base layer grown by solid source molecular beam epitaxy using carbon tetrabromide
|
Zhang, R.
|
|
2003
|
47 |
8 |
p. 1339-1343
5 p.
|
artikel
|
| 10 |
GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors
|
Teke, A
|
|
2003
|
47 |
8 |
p. 1401-1408
8 p.
|
artikel
|
| 11 |
High temperature thermal stability of Au/Ti/WSi
x
Schottky contacts on n-type 4H-SiC
|
Kim, Jihyun
|
|
2003
|
47 |
8 |
p. 1345-1350
6 p.
|
artikel
|
| 12 |
Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs
|
Olsen, S.H.
|
|
2003
|
47 |
8 |
p. 1289-1295
7 p.
|
artikel
|
| 13 |
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
|
Or, David C.T
|
|
2003
|
47 |
8 |
p. 1391-1395
5 p.
|
artikel
|
| 14 |
Influence of gettering and passivation on uniformity of the electrical parameters in monolithic multicrystalline silicon solar cell
|
Wang, He
|
|
2003
|
47 |
8 |
p. 1363-1367
5 p.
|
artikel
|
| 15 |
Monte Carlo analysis of the implant dose sensitivity in 0.1 μm NMOSFET
|
Srinivasaiah, H.C
|
|
2003
|
47 |
8 |
p. 1379-1383
5 p.
|
artikel
|
| 16 |
New procedure for the extraction of a-Si:H TFTs model parameters in the subthreshold region
|
Reséndiz, L.
|
|
2003
|
47 |
8 |
p. 1351-1358
8 p.
|
artikel
|
| 17 |
Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region
|
Masui, T
|
|
2003
|
47 |
8 |
p. 1385-1390
6 p.
|
artikel
|
| 18 |
Si film electrical characterization in SOI substrates by the HgFET technique
|
Hovel, H.J.
|
|
2003
|
47 |
8 |
p. 1311-1333
23 p.
|
artikel
|
| 19 |
Simulation of nonequilibrium thermal effects in power LDMOS transistors
|
Raman, A
|
|
2003
|
47 |
8 |
p. 1265-1273
9 p.
|
artikel
|
| 20 |
Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H–SiC
|
Xu, J.P
|
|
2003
|
47 |
8 |
p. 1397-1400
4 p.
|
artikel
|
| 21 |
The characteristics of InGaAs/GaAs modulation-doped photodetectors with two absorption bands
|
Hsieh, Li-Zen
|
|
2003
|
47 |
8 |
p. 1413-1415
3 p.
|
artikel
|
| 22 |
Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices
|
Rousseau, M.
|
|
2003
|
47 |
8 |
p. 1297-1309
13 p.
|
artikel
|
| 23 |
Zinc-blende ZnS under pressure: predicted electronic properties
|
Benmakhlouf, F.
|
|
2003
|
47 |
8 |
p. 1335-1338
4 p.
|
artikel
|
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