| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Achieving the ballistic-limit current in Si MOSFETs
|
Kim, Keunwoo
|
|
2003
|
47 |
4 |
p. 721-726
6 p.
|
artikel
|
| 2 |
A modified Shockley–Read–Hall theory including radiative transitions
|
Beaucarne, G.
|
|
2003
|
47 |
4 |
p. 685-689
5 p.
|
artikel
|
| 3 |
Analysis of the turn-off failure mechanism of silicon power diode
|
Huang, Alex Q
|
|
2003
|
47 |
4 |
p. 727-739
13 p.
|
artikel
|
| 4 |
A numerical comparison between MOS control and junction control high voltage devices in SiC technology
|
Mihaila, A
|
|
2003
|
47 |
4 |
p. 607-615
9 p.
|
artikel
|
| 5 |
Deep levels studies of AlGaN/GaN superlattices
|
Polyakov, A.Y.
|
|
2003
|
47 |
4 |
p. 671-676
6 p.
|
artikel
|
| 6 |
Electronic wavelength tuning of multisegment InGaAsP/InP lasers with laterally coupled absorptive DFB gratings
|
Körbl, M.
|
|
2003
|
47 |
4 |
p. 741-745
5 p.
|
artikel
|
| 7 |
Fabrication and electrical characteristics of polymer-based Schottky diode
|
Liang, Guirong
|
|
2003
|
47 |
4 |
p. 691-694
4 p.
|
artikel
|
| 8 |
Fabrication of field emitter arrays using the mold method for FED application
|
Cho, Kyung-Jea
|
|
2003
|
47 |
4 |
p. 633-637
5 p.
|
artikel
|
| 9 |
Formula for the current gain cut-off frequency considering intrinsic emitter dimensions and extrinsic parasitics in HBT
|
Shin, Hyunchol
|
|
2003
|
47 |
4 |
p. 747-749
3 p.
|
artikel
|
| 10 |
High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching
|
Lin, C.S.
|
|
2003
|
47 |
4 |
p. 695-698
4 p.
|
artikel
|
| 11 |
Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias
|
El Hdiy, A.
|
|
2003
|
47 |
4 |
p. 617-620
4 p.
|
artikel
|
| 12 |
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
|
Sallese, Jean-Michel
|
|
2003
|
47 |
4 |
p. 677-683
7 p.
|
artikel
|
| 13 |
Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
|
Danielsson, E.
|
|
2003
|
47 |
4 |
p. 639-644
6 p.
|
artikel
|
| 14 |
Lateral polysilicon p+–p–n+ and p+–n–n+ diodes
|
Karnik, Sooraj V.
|
|
2003
|
47 |
4 |
p. 653-659
7 p.
|
artikel
|
| 15 |
Measured thermal images of a gallium arsenide power MMIC with and without RF applied to the input
|
Oxley, C.H.
|
|
2003
|
47 |
4 |
p. 755-758
4 p.
|
artikel
|
| 16 |
Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs
|
Sheu, Chorng-Jye
|
|
2003
|
47 |
4 |
p. 705-711
7 p.
|
artikel
|
| 17 |
Modeling of kink effect in polysilicon thin film transistor using charge sheet approach
|
Bindra, Simrata
|
|
2003
|
47 |
4 |
p. 645-651
7 p.
|
artikel
|
| 18 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
|
Yang, C.W.
|
|
2003
|
47 |
4 |
p. 751-754
4 p.
|
artikel
|
| 19 |
Non-equilibrium modeling of tunneling gate currents in nanoscale MOSFETs
|
Huang, Chung-Kuang
|
|
2003
|
47 |
4 |
p. 713-720
8 p.
|
artikel
|
| 20 |
Persistent photoconductivity in ZnCdSe MBE films grown on GaAs
|
Hernández, L.
|
|
2003
|
47 |
4 |
p. 759-762
4 p.
|
artikel
|
| 21 |
Photoassisted MOVPE grown (n)ZnSe/(p+)GaAs heterojunction solar cells
|
Parent, D.W.
|
|
2003
|
47 |
4 |
p. 595-599
5 p.
|
artikel
|
| 22 |
Physical modeling of off-state breakdown in power GaAs MESFETs
|
Kunihiro, Kazuaki
|
|
2003
|
47 |
4 |
p. 621-631
11 p.
|
artikel
|
| 23 |
Process technique for SEU reliability improvement of deep sub-micron SRAM cell
|
Saxena, P.K.
|
|
2003
|
47 |
4 |
p. 661-664
4 p.
|
artikel
|
| 24 |
Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
|
Li, Baojun
|
|
2003
|
47 |
4 |
p. 601-605
5 p.
|
artikel
|
| 25 |
Publishers Note
|
|
|
2003
|
47 |
4 |
p. 593-
1 p.
|
artikel
|
| 26 |
Reversible light coalescence phenomena of Si photo-emitters under stressing at low breakdown currents
|
Chatterjee, A.
|
|
2003
|
47 |
4 |
p. 665-670
6 p.
|
artikel
|
| 27 |
The critical charge density in high voltage 4H-SiC thyristors
|
Levinshtein, Michael E.
|
|
2003
|
47 |
4 |
p. 699-704
6 p.
|
artikel
|
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