| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs
|
Zhang, Zhikuan
|
|
2003
|
47 |
10 |
p. 1829-1833
5 p.
|
artikel
|
| 2 |
An equivalent heterojunction-like model for polysilicon emitter bipolar transistor
|
Jin, Hai-Yan
|
|
2003
|
47 |
10 |
p. 1719-1727
9 p.
|
artikel
|
| 3 |
A new low voltage fast SONOS memory with high-k dielectric
|
Gritsenko, V.A.
|
|
2003
|
47 |
10 |
p. 1651-1656
6 p.
|
artikel
|
| 4 |
An improved silicon-oxidation-kinetics and accurate analytic model of oxidation
|
Jimin, Wang
|
|
2003
|
47 |
10 |
p. 1699-1705
7 p.
|
artikel
|
| 5 |
A novel idea: using DTMOS to suppress FIBL effect in MOSFET with high-k gate dielectrics
|
Wang, Wenping
|
|
2003
|
47 |
10 |
p. 1735-1740
6 p.
|
artikel
|
| 6 |
A novel integrated MIS low-pass filter device
|
Holten, Stephan
|
|
2003
|
47 |
10 |
p. 1685-1691
7 p.
|
artikel
|
| 7 |
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric
|
Lime, F.
|
|
2003
|
47 |
10 |
p. 1617-1621
5 p.
|
artikel
|
| 8 |
Conductance transient, capacitance–voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films
|
Dueñas, S.
|
|
2003
|
47 |
10 |
p. 1623-1629
7 p.
|
artikel
|
| 9 |
Depletion-mode n-channel organic field-effect transistors based on NTCDA
|
Zhu, Mo
|
|
2003
|
47 |
10 |
p. 1855-1858
4 p.
|
artikel
|
| 10 |
Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading
|
Ebong, A.
|
|
2003
|
47 |
10 |
p. 1817-1823
7 p.
|
artikel
|
| 11 |
Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition
|
Damlencourt, J.-F.
|
|
2003
|
47 |
10 |
p. 1613-1616
4 p.
|
artikel
|
| 12 |
Electrical characteristics of a-SiGe:H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact
|
Lin, Cha-Shin
|
|
2003
|
47 |
10 |
p. 1787-1791
5 p.
|
artikel
|
| 13 |
Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory
|
Deleruyelle, D.
|
|
2003
|
47 |
10 |
p. 1641-1644
4 p.
|
artikel
|
| 14 |
Electrical properties of Si–SiO2 interface traps and evolution with oxide thickness in MOSFET’s with oxides from 2.3 to 1.2 nm thick
|
Bauza, D.
|
|
2003
|
47 |
10 |
p. 1677-1683
7 p.
|
artikel
|
| 15 |
Electrical properties of ultrathin TiO2 films on Si1−y C y heterolayers
|
Dalapati, G.K.
|
|
2003
|
47 |
10 |
p. 1793-1798
6 p.
|
artikel
|
| 16 |
GaAs and AlGaAs photodiodes for ionizing radiation detectors
|
Andreev, V.M.
|
|
2003
|
47 |
10 |
p. 1835-1841
7 p.
|
artikel
|
| 17 |
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
|
Chen, Lung-Chien
|
|
2003
|
47 |
10 |
p. 1843-1846
4 p.
|
artikel
|
| 18 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
Peng, Y.H.
|
|
2003
|
47 |
10 |
p. 1775-1780
6 p.
|
artikel
|
| 19 |
High reflectivity distributed Bragg reflectors for 1.55 μm VCSELs using InP/airgap
|
Tsai, J.Y.
|
|
2003
|
47 |
10 |
p. 1825-1828
4 p.
|
artikel
|
| 20 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
|
Luo, B.
|
|
2003
|
47 |
10 |
p. 1781-1786
6 p.
|
artikel
|
| 21 |
Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide
|
Petit, C
|
|
2003
|
47 |
10 |
p. 1663-1668
6 p.
|
artikel
|
| 22 |
Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices
|
Perniola, L.
|
|
2003
|
47 |
10 |
p. 1637-1640
4 p.
|
artikel
|
| 23 |
Influence of gate oxide thickness on Sc2O3/GaN MOSFETs
|
Cho, Hyun
|
|
2003
|
47 |
10 |
p. 1757-1761
5 p.
|
artikel
|
| 24 |
InGaN quantum dot photodetectors
|
Ji, L.W.
|
|
2003
|
47 |
10 |
p. 1753-1756
4 p.
|
artikel
|
| 25 |
Investigation of epitaxial lift-off the InGaAs p–i–n photodiodes to the AlAs/GaAs distributed Bragg reflectors
|
Yang, Chi-Da
|
|
2003
|
47 |
10 |
p. 1763-1767
5 p.
|
artikel
|
| 26 |
Liner schemes of the aluminum damascene interconnection for sub-0.2 μm line pitch metallization
|
Kim, Sam-Dong
|
|
2003
|
47 |
10 |
p. 1875-1879
5 p.
|
artikel
|
| 27 |
Modeling and design of the high performance step SOI-LIGBT power devices by partition mid-point method
|
Chang, Fang-Long
|
|
2003
|
47 |
10 |
p. 1693-1698
6 p.
|
artikel
|
| 28 |
Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs
|
Kim, D.M.
|
|
2003
|
47 |
10 |
p. 1707-1712
6 p.
|
artikel
|
| 29 |
New approach for the gate current source–drain partition modeling in advanced MOSFETs
|
Romanjek, K.
|
|
2003
|
47 |
10 |
p. 1657-1661
5 p.
|
artikel
|
| 30 |
[No title]
|
Ghibaudo, G
|
|
2003
|
47 |
10 |
p. 1605-
1 p.
|
artikel
|
| 31 |
On laterally spreading of space–charge-region in planar metal-semiconductor-metal structures
|
Khunkhao, S.
|
|
2003
|
47 |
10 |
p. 1811-1816
6 p.
|
artikel
|
| 32 |
Oxide via etching in a magnetically enhanced CHF3/CF4/Ar plasma
|
Kim, Byungwhan
|
|
2003
|
47 |
10 |
p. 1799-1803
5 p.
|
artikel
|
| 33 |
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
|
Lai, Fang-I
|
|
2003
|
47 |
10 |
p. 1805-1809
5 p.
|
artikel
|
| 34 |
PMNT films for integrated capacitors
|
Fribourg-Blanc, Eric
|
|
2003
|
47 |
10 |
p. 1631-1635
5 p.
|
artikel
|
| 35 |
Reduction of effective barrier height and low-frequency noise of Al–GaAs Schottky contacts by hydrocarbon ion beam irradiation
|
Meškinis, S.
|
|
2003
|
47 |
10 |
p. 1713-1718
6 p.
|
artikel
|
| 36 |
Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory
|
Molas, G.
|
|
2003
|
47 |
10 |
p. 1645-1649
5 p.
|
artikel
|
| 37 |
Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes
|
Grekhov, Igor V.
|
|
2003
|
47 |
10 |
p. 1769-1774
6 p.
|
artikel
|
| 38 |
Temperature dependence of the structural properties of amorphous silicon oxynitride layers
|
Abu El-Oyoun, M.
|
|
2003
|
47 |
10 |
p. 1669-1676
8 p.
|
artikel
|
| 39 |
The effects of operating bias conditions on the proton tolerance of SiGe HBTs
|
Zhang, Shiming
|
|
2003
|
47 |
10 |
p. 1729-1734
6 p.
|
artikel
|
| 40 |
Theoretical analysis of a field emission enhanced semiconductor thermoelectric cooler
|
Chung, Moon
|
|
2003
|
47 |
10 |
p. 1745-1751
7 p.
|
artikel
|
| 41 |
Theoretical study of characteristics in GaN metal–semiconductor–metal photodetectors
|
Tian, Yuan
|
|
2003
|
47 |
10 |
p. 1863-1867
5 p.
|
artikel
|
| 42 |
The Pr2O3/Si(001) interface studied by synchrotron radiation photo-electron spectroscopy
|
Schmeißer, D.
|
|
2003
|
47 |
10 |
p. 1607-1611
5 p.
|
artikel
|
| 43 |
The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes
|
Altındal, Ş.
|
|
2003
|
47 |
10 |
p. 1847-1854
8 p.
|
artikel
|
| 44 |
The role of Ni and Au on transparent film of blue LEDs
|
Qin, Z.X.
|
|
2003
|
47 |
10 |
p. 1741-1743
3 p.
|
artikel
|
| 45 |
Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers
|
Gillespie, J.K.
|
|
2003
|
47 |
10 |
p. 1859-1862
4 p.
|
artikel
|
| 46 |
White noise due to photocurrents in planar MSM structures on low-resistivity Si
|
Khunkhao, S.
|
|
2003
|
47 |
10 |
p. 1869-1874
6 p.
|
artikel
|
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