| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact SOI MOS transistor model for distortion analysis
|
Zhang, Guoyan
|
|
2003
|
47 |
1 |
p. 143-147
5 p.
|
artikel
|
| 2 |
A method to evaluate the location of the maximum value of a function with high level of noise
|
Ortiz-Conde, A.
|
|
2003
|
47 |
1 |
p. 93-97
5 p.
|
artikel
|
| 3 |
Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method––considering tail of distribution function
|
Matsuo, Naoto
|
|
2003
|
47 |
1 |
p. 161-163
3 p.
|
artikel
|
| 4 |
Analysis of the anomalous drain current characteristics of halo MOSFETs
|
Koo, Hoewoo
|
|
2003
|
47 |
1 |
p. 99-106
8 p.
|
artikel
|
| 5 |
A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT
|
Gupta, Ritesh
|
|
2003
|
47 |
1 |
p. 33-38
6 p.
|
artikel
|
| 6 |
A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery
|
Anand, R.S.
|
|
2003
|
47 |
1 |
p. 83-91
9 p.
|
artikel
|
| 7 |
Carrier mobility model for GaN
|
Mnatsakanov, Tigran T
|
|
2003
|
47 |
1 |
p. 111-115
5 p.
|
artikel
|
| 8 |
Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (g m/I ds)
|
Kranti, A
|
|
2003
|
47 |
1 |
p. 155-159
5 p.
|
artikel
|
| 9 |
Effect of contact geometry on 4H-SiC rectifiers with junction termination extension
|
Nigam, S
|
|
2003
|
47 |
1 |
p. 57-60
4 p.
|
artikel
|
| 10 |
Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics
|
Yang, K.J
|
|
2003
|
47 |
1 |
p. 149-153
5 p.
|
artikel
|
| 11 |
Enhancement of hole injection for nitride-based light-emitting devices
|
Komirenko, S.M
|
|
2003
|
47 |
1 |
p. 169-171
3 p.
|
artikel
|
| 12 |
Helium irradiated high-power P–i–N diode with low ON-state voltage drop
|
Vobecký, J.
|
|
2003
|
47 |
1 |
p. 45-50
6 p.
|
artikel
|
| 13 |
High frequency BJT: modeling, and parameter extraction from simple measurements on encapsulated devices
|
Karmalkar, S.
|
|
2003
|
47 |
1 |
p. 131-141
11 p.
|
artikel
|
| 14 |
Influence of edge termination geometry on performance of 4H-SiC p–i–n rectifiers
|
Nigam, S
|
|
2003
|
47 |
1 |
p. 61-64
4 p.
|
artikel
|
| 15 |
Investigation of reliability and lifetime distribution of the gas sensors based on C2H5OH
|
Wang, Yu-de
|
|
2003
|
47 |
1 |
p. 107-110
4 p.
|
artikel
|
| 16 |
Low noise photosensitive device structures based on porous silicon
|
Balagurov, L.A
|
|
2003
|
47 |
1 |
p. 65-69
5 p.
|
artikel
|
| 17 |
0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length
|
Kuliev, A
|
|
2003
|
47 |
1 |
p. 117-122
6 p.
|
artikel
|
| 18 |
New type of defects related to nonuniform distribution of compensating centers in p-GaN films
|
Polyakov, A.Y
|
|
2003
|
47 |
1 |
p. 51-56
6 p.
|
artikel
|
| 19 |
On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs
|
Wang, Chih-Kai
|
|
2003
|
47 |
1 |
p. 19-24
6 p.
|
artikel
|
| 20 |
Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs
|
Maitra, Kingsuk
|
|
2003
|
47 |
1 |
p. 15-17
3 p.
|
artikel
|
| 21 |
Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs
|
Dietrich, R
|
|
2003
|
47 |
1 |
p. 123-125
3 p.
|
artikel
|
| 22 |
Proton response of low-frequency noise in 0.20 μm 90 GHz f T UHV/CVD SiGe HBTs
|
Jin, Zhenrong
|
|
2003
|
47 |
1 |
p. 39-44
6 p.
|
artikel
|
| 23 |
Reducing the current crowding effect in bipolar transistors by tunnel diode emitter design
|
Shamir, N
|
|
2003
|
47 |
1 |
p. 127-130
4 p.
|
artikel
|
| 24 |
Reverse-bias safe operation area of large area MCT and IGBT
|
Liu, Yin
|
|
2003
|
47 |
1 |
p. 1-14
14 p.
|
artikel
|
| 25 |
Scaleable large-signal model of 0.18 μm CMOS process for rf power predictions
|
Kuo, Chin-Wei
|
|
2003
|
47 |
1 |
p. 77-81
5 p.
|
artikel
|
| 26 |
Silicon-based all-optical memory elements for 1.54 μm photonics
|
Forcales, M
|
|
2003
|
47 |
1 |
p. 165-168
4 p.
|
artikel
|
| 27 |
Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors
|
Hastas, N.A
|
|
2003
|
47 |
1 |
p. 25-31
7 p.
|
artikel
|
| 28 |
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
|
Lee, Yi-Mu
|
|
2003
|
47 |
1 |
p. 71-76
6 p.
|
artikel
|
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