| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
|
Chen, Chun-Yuan
|
|
2002
|
46 |
9 |
p. 1289-1294
6 p.
|
artikel
|
| 2 |
A comparative study of surface passivation on AlGaN/GaN HEMTs
|
Lu, W
|
|
2002
|
46 |
9 |
p. 1441-1444
4 p.
|
artikel
|
| 3 |
Analysis of reverse current–voltage characteristics of Schottky diodes based on phonon-assisted tunneling including Frenkel emission mechanism
|
Pipinys, P
|
|
2002
|
46 |
9 |
p. 1283-1287
5 p.
|
artikel
|
| 4 |
Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications
|
Adriaensen, S
|
|
2002
|
46 |
9 |
p. 1339-1343
5 p.
|
artikel
|
| 5 |
Analytical model for extrinsic time-dependent dielectric breakdown of thin gate oxide
|
Katto, Hisao
|
|
2002
|
46 |
9 |
p. 1265-1272
8 p.
|
artikel
|
| 6 |
An improved model for substrate current of submicron MOSFETs
|
Gao, X
|
|
2002
|
46 |
9 |
p. 1395-1398
4 p.
|
artikel
|
| 7 |
A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers
|
Cuscunà, M
|
|
2002
|
46 |
9 |
p. 1351-1358
8 p.
|
artikel
|
| 8 |
A Schottky diode clamped merged drain CMOS structure
|
Huang, Feng-Jung
|
|
2002
|
46 |
9 |
p. 1251-1257
7 p.
|
artikel
|
| 9 |
A simple approach to understanding measurement errors in the cross-bridge Kelvin resistor and a new pattern for measurements of specific contact resistivity
|
Ono, Mizuki
|
|
2002
|
46 |
9 |
p. 1325-1331
7 p.
|
artikel
|
| 10 |
Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions
|
Luo, B
|
|
2002
|
46 |
9 |
p. 1345-1349
5 p.
|
artikel
|
| 11 |
Comparison of the effects of deuterated SiN X films on GaN and GaAs rectifiers
|
Luo, B
|
|
2002
|
46 |
9 |
p. 1453-1457
5 p.
|
artikel
|
| 12 |
Deformation of a deep-level transient spectroscopy spectrum by an inhomogeneous carrier concentration depth profile
|
Ito, Akira
|
|
2002
|
46 |
9 |
p. 1307-1313
7 p.
|
artikel
|
| 13 |
Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation
|
Frei, M.R
|
|
2002
|
46 |
9 |
p. 1301-1305
5 p.
|
artikel
|
| 14 |
Design and optimization of thin film fully depleted vertical surrounding gate (VSG) MOSFETs for enhanced short channel immunity
|
Kranti, Abhinav
|
|
2002
|
46 |
9 |
p. 1333-1338
6 p.
|
artikel
|
| 15 |
Determination of deep trap concentration at channel–substrate interface in GaAs MESFET using sidegating measurements
|
Khuchua, Nina P
|
|
2002
|
46 |
9 |
p. 1463-1466
4 p.
|
artikel
|
| 16 |
Development of plasma dielectric deposition method for increased pre-metal dielectric interfacial film stability
|
Lobbins, J.M
|
|
2002
|
46 |
9 |
p. 1367-1373
7 p.
|
artikel
|
| 17 |
Effects of surface oxide on SiGe/Si diode characteristics
|
Hirose, F
|
|
2002
|
46 |
9 |
p. 1259-1263
5 p.
|
artikel
|
| 18 |
Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide
|
Koo, S.-M
|
|
2002
|
46 |
9 |
p. 1375-1380
6 p.
|
artikel
|
| 19 |
Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiN x passivation
|
Baik, K.H
|
|
2002
|
46 |
9 |
p. 1459-1462
4 p.
|
artikel
|
| 20 |
Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
|
Chang, Kow-Ming
|
|
2002
|
46 |
9 |
p. 1399-1403
5 p.
|
artikel
|
| 21 |
Enhanced modelization of ion implant simulation in compound semiconductors
|
Hernández-Mangas, J.M.
|
|
2002
|
46 |
9 |
p. 1315-1324
10 p.
|
artikel
|
| 22 |
Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices
|
Nicolett, A.S
|
|
2002
|
46 |
9 |
p. 1381-1387
7 p.
|
artikel
|
| 23 |
Influence of PECVD deuterated SiN x on GaAs MESFETs and GaAs/AlGaAs HBTs
|
Luo, B
|
|
2002
|
46 |
9 |
p. 1359-1365
7 p.
|
artikel
|
| 24 |
Intrinsic and extrinsic photoresponse of Mo/n-Si/Mo structures with wide electrode gap
|
Kobayashi, K
|
|
2002
|
46 |
9 |
p. 1411-1416
6 p.
|
artikel
|
| 25 |
Investigation of interface charges at the heterojunction discontinuity in HBT devices
|
Grajal de la Fuente, Jesús
|
|
2002
|
46 |
9 |
p. 1273-1281
9 p.
|
artikel
|
| 26 |
Low-temperature electrical characterizations of InAs1−x−y Sb y P x photodiodes fabricated by liquid-phase epitaxy
|
Uen, Wu-Yih
|
|
2002
|
46 |
9 |
p. 1405-1409
5 p.
|
artikel
|
| 27 |
Noise-gain tradeoff in RF SiGe HBTs
|
Niu, Guofu
|
|
2002
|
46 |
9 |
p. 1445-1451
7 p.
|
artikel
|
| 28 |
Observation of inversion behavior in n-type GaN planar metal–insulator–semiconductor capacitor
|
Irokawa, Yoshihiro
|
|
2002
|
46 |
9 |
p. 1467-1469
3 p.
|
artikel
|
| 29 |
Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy
|
Jessen, G.H
|
|
2002
|
46 |
9 |
p. 1427-1431
5 p.
|
artikel
|
| 30 |
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
|
Lee, S.-K
|
|
2002
|
46 |
9 |
p. 1433-1440
8 p.
|
artikel
|
| 31 |
Structural and transport properties of CdS films deposited on flexible substrates
|
Shur, M.S
|
|
2002
|
46 |
9 |
p. 1417-1420
4 p.
|
artikel
|
| 32 |
The influence of InGaP barrier layer on the characteristics of 1.3 μm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes
|
Lee, Chong-Yi
|
|
2002
|
46 |
9 |
p. 1389-1394
6 p.
|
artikel
|
| 33 |
Theoretical analysis of noise transfer in wavelength converter based on cross-gain modulation in semiconductor optical amplifiers
|
Wu, Shi-Bao
|
|
2002
|
46 |
9 |
p. 1295-1299
5 p.
|
artikel
|
| 34 |
Trade off between polysilicon film quality and thin film transistor operational amplifier DC gain
|
Afentakis, Themis
|
|
2002
|
46 |
9 |
p. 1421-1425
5 p.
|
artikel
|
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