| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics
|
Dehan, Morin
|
|
2002
|
46 |
7 |
p. 1005-1011
7 p.
|
artikel
|
| 2 |
Bardeen's approach for tunneling evaluation in MOS structures
|
Clerc, R.
|
|
2002
|
46 |
7 |
p. 1039-1044
6 p.
|
artikel
|
| 3 |
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors?
|
Serra, A.Dalla
|
|
2002
|
46 |
7 |
p. 1069-1073
5 p.
|
artikel
|
| 4 |
Current status and future directions of SOI technology
|
Yoshimi, Makoto
|
|
2002
|
46 |
7 |
p. 951-958
8 p.
|
artikel
|
| 5 |
DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects
|
Masson, Pascal
|
|
2002
|
46 |
7 |
p. 1051-1059
9 p.
|
artikel
|
| 6 |
Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates
|
Sareen, Alok
|
|
2002
|
46 |
7 |
p. 991-995
5 p.
|
artikel
|
| 7 |
1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation
|
Akue Allogo, Y.
|
|
2002
|
46 |
7 |
p. 977-983
7 p.
|
artikel
|
| 8 |
Foreword
|
Balestra, Francis
|
|
2002
|
46 |
7 |
p. 937-
1 p.
|
artikel
|
| 9 |
High-frequency operation potential of the tunnel emitter transistor
|
Aderstedt, Erik
|
|
2002
|
46 |
7 |
p. 1033-1037
5 p.
|
artikel
|
| 10 |
Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs
|
Haendler, S.
|
|
2002
|
46 |
7 |
p. 1013-1017
5 p.
|
artikel
|
| 11 |
Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology
|
Munteanu, D
|
|
2002
|
46 |
7 |
p. 1045-1050
6 p.
|
artikel
|
| 12 |
Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations
|
Dubois, Emmanuel
|
|
2002
|
46 |
7 |
p. 997-1004
8 p.
|
artikel
|
| 13 |
Planar and vertical double gate concepts
|
Schulz, T
|
|
2002
|
46 |
7 |
p. 985-989
5 p.
|
artikel
|
| 14 |
Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs
|
Städele, M.
|
|
2002
|
46 |
7 |
p. 1027-1032
6 p.
|
artikel
|
| 15 |
Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution
|
Barraud, S.
|
|
2002
|
46 |
7 |
p. 1061-1067
7 p.
|
artikel
|
| 16 |
Soft breakdown current noise in ultra-thin gate oxides
|
Cester, A.
|
|
2002
|
46 |
7 |
p. 1019-1025
7 p.
|
artikel
|
| 17 |
Substrate current and degradation of trench LDD transistors
|
Landgraf, E.
|
|
2002
|
46 |
7 |
p. 965-970
6 p.
|
artikel
|
| 18 |
The vertical replacement-gate (VRG) MOSFET
|
Hergenrother, J.M.
|
|
2002
|
46 |
7 |
p. 939-950
12 p.
|
artikel
|
| 19 |
Thorough characterization of deep-submicron surface and buried channel pMOSFETs
|
Cretu, B.
|
|
2002
|
46 |
7 |
p. 971-975
5 p.
|
artikel
|
| 20 |
Transistor optimisation for a low cost, high performance 0.13 μm CMOS technology
|
Augendre, E.
|
|
2002
|
46 |
7 |
p. 959-963
5 p.
|
artikel
|
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