| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT
|
Cui, Delong
|
|
2002
|
46 |
2 |
p. 249-253
5 p.
|
artikel
|
| 2 |
Analysis of the breakdown voltage in SOI and SOS technologies
|
Roig, J
|
|
2002
|
46 |
2 |
p. 255-261
7 p.
|
artikel
|
| 3 |
An improved regulated cascode current mirror
|
Sarao, J.
|
|
2002
|
46 |
2 |
p. 307-312
6 p.
|
artikel
|
| 4 |
An investigation of structural, optical and electrical properties of GaN thin films grown on Si(111) by reaction evaporation
|
Zhang, Haoxiang
|
|
2002
|
46 |
2 |
p. 301-306
6 p.
|
artikel
|
| 5 |
A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics
|
Kang, Ey Goo
|
|
2002
|
46 |
2 |
p. 295-300
6 p.
|
artikel
|
| 6 |
Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods
|
Markov, A.V
|
|
2002
|
46 |
2 |
p. 269-277
9 p.
|
artikel
|
| 7 |
Electrical characteristics of thin film cubic boron nitride
|
Noor Mohammad, S.
|
|
2002
|
46 |
2 |
p. 203-222
20 p.
|
artikel
|
| 8 |
Experimental studies of frequency response of small-signal MOSFET amplifiers
|
Vernon, Emerson
|
|
2002
|
46 |
2 |
p. 287-294
8 p.
|
artikel
|
| 9 |
GaN-based modulation doped FETs and UV detectors
|
Morkoç, Hadis
|
|
2002
|
46 |
2 |
p. 157-202
46 p.
|
artikel
|
| 10 |
Gate coupled and zener diode triggering silicon-controlled rectifiers for electrostatic discharge protection circuits
|
Jang, Sheng-Lyang
|
|
2002
|
46 |
2 |
p. 263-267
5 p.
|
artikel
|
| 11 |
Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler–Nordheim stress
|
Samanta, Piyas
|
|
2002
|
46 |
2 |
p. 279-285
7 p.
|
artikel
|
| 12 |
Modelling of the hole-initiated impact ionization current in the framework of hydrodynamic equations
|
Lorenzini, Martino
|
|
2002
|
46 |
2 |
p. 223-234
12 p.
|
artikel
|
| 13 |
The impact of post-polysilicon gate process on ultra-thin gate oxide integrity
|
Ang, Chew-Hoe
|
|
2002
|
46 |
2 |
p. 243-247
5 p.
|
artikel
|
| 14 |
Ultra-thin insulator covered silicon: potential barriers and tunnel currents
|
Mizsei, János
|
|
2002
|
46 |
2 |
p. 235-241
7 p.
|
artikel
|
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