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                             46 results found
no title author magazine year volume issue page(s) type
1 A charge sheet model for MOSFETs with an abrupt retrograde channel Persson, S.
 2002
 46 12 p. 2209-2216
8 p.
 article
2 A charge sheet model for MOSFETs with an abrupt retrograde channel Persson, S.
 2002
 46 12 p. 2217-2225
9 p.
 article
3 A compact large signal model of LDMOS Tang, C.W
 2002
 46 12 p. 2111-2115
5 p.
 article
4 Analytical expressions for intermodulation distortion of a MESFET small-signal amplifier using the nonlinear Volterra series Ahmad, Imad S.
 2002
 46 12 p. 2075-2084
10 p.
 article
5 An analytical model for charge pumping below strong inversion and accumulation Bauza, D
 2002
 46 12 p. 2035-2039
5 p.
 article
6 A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs Lin, C.K
 2002
 46 12 p. 2135-2139
5 p.
 article
7 A new process to improve the performance of 850 nm wavelength GaAs VCSELs Jiang, Wen-Jang
 2002
 46 12 p. 2287-2289
3 p.
 article
8 A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature Afentakis, Themis
 2002
 46 12 p. 2301-2306
6 p.
 article
9 A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs Prégaldiny, Fabien
 2002
 46 12 p. 2191-2198
8 p.
 article
10 A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization Lukyanchikova, N.B
 2002
 46 12 p. 2053-2061
9 p.
 article
11 Band alignments in sidewall strained Si/strained SiGe heterostructures Wang, X.
 2002
 46 12 p. 2021-2025
5 p.
 article
12 Characterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology Shang, Huiling
 2002
 46 12 p. 2307-2313
7 p.
 article
13 Composition induced design considerations for InP/Ga x In1−x As heterojunction bipolar transistors Mohammad, S.Noor
 2002
 46 12 p. 2257-2267
11 p.
 article
14 Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression Kato, M
 2002
 46 12 p. 2099-2104
6 p.
 article
15 Design of 0.1-μm pocket n-MOSFETs for low-voltage applications Pang, Yon-Sup
 2002
 46 12 p. 2315-2322
8 p.
 article
16 Effect of surface preparation on Ni Ohmic contact to 3C-SiC Noh, Jae Il
 2002
 46 12 p. 2273-2279
7 p.
 article
17 Electrical properties and deep levels in bulk solution grown GaAs crystal Markov, A.V
 2002
 46 12 p. 2161-2168
8 p.
 article
18 Equilibrium boundary conditions in the double heterostructure opto-electronic switch Cai, J.
 2002
 46 12 p. 2247-2256
10 p.
 article
19 ESD protection device design using statistical methods Shigyo, N
 2002
 46 12 p. 2117-2122
6 p.
 article
20 Extraction method for polycrystalline TFT above and below threshold model parameters Estrada, M.
 2002
 46 12 p. 2295-2300
6 p.
 article
21 GaN p–n junction diode formed by Si ion implantation into p-GaN Lee, M.L
 2002
 46 12 p. 2179-2183
5 p.
 article
22 High current bulk GaN Schottky rectifiers Ip, K
 2002
 46 12 p. 2169-2172
4 p.
 article
23 High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes Lei, Po-Hsun
 2002
 46 12 p. 2041-2044
4 p.
 article
24 High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts Averine, S
 2002
 46 12 p. 2045-2051
7 p.
 article
25 High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1−x Ge x :H layer Lin, Cha-Shin
 2002
 46 12 p. 2027-2033
7 p.
 article
26 4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes Su, Yan-Kuin
 2002
 46 12 p. 2237-2240
4 p.
 article
27 InGaN/GaN MQW p–n junction photodetectors Chiou, Yu-Zung
 2002
 46 12 p. 2227-2229
3 p.
 article
28 Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions Polyakov, A.Y
 2002
 46 12 p. 2141-2146
6 p.
 article
29 Intrinsic inversion charge in the mobility region of fully depleted SOI-MOSFETs Wiatr, Maciej
 2002
 46 12 p. 2089-2097
9 p.
 article
30 Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Cao, X.A
 2002
 46 12 p. 2291-2294
4 p.
 article
31 Low-frequency noise analysis of Si/SiGe channel pMOSFETs Li, P.W
 2002
 46 12 p. 2281-2285
5 p.
 article
32 Mb/s data transmission over a RF fiber-optic link using a LiNbO3 microdisk modulator Hossein-Zadeh, M
 2002
 46 12 p. 2173-2178
6 p.
 article
33 Nitrogen vacancy scattering in GaN grown by metal–organic vapor phase epitaxy Chen, Zhen
 2002
 46 12 p. 2069-2074
6 p.
 article
34 Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p–n junction displacement Breed, A
 2002
 46 12 p. 2199-2208
10 p.
 article
35 Optical properties and defects in GaAsN and InGaAsN films and quantum well structures Polyakov, A.Y
 2002
 46 12 p. 2147-2153
7 p.
 article
36 Optimised n-channel Si/SiGe HFETs design for V TH shift immunity Jeamsaksiri, W
 2002
 46 12 p. 2241-2245
5 p.
 article
37 Publisher’s note 2002
 46 12 p. 2019-
1 p.
 article
38 Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC Nakamura, Tomonori
 2002
 46 12 p. 2063-2067
5 p.
 article
39 Skin effect of on-chip copper interconnects on electromigration Wu, W
 2002
 46 12 p. 2269-2272
4 p.
 article
40 Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy Polyakov, A.Y
 2002
 46 12 p. 2155-2160
6 p.
 article
41 Study of novel techniques for reducing self-heating effects in SOI power LDMOS Roig, J
 2002
 46 12 p. 2123-2133
11 p.
 article
42 The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors Chen, Tianbing
 2002
 46 12 p. 2231-2235
5 p.
 article
43 The mechanism for the formation of slug flow in vertical gas–liquid two-phase flow Sun, Baojiang
 2002
 46 12 p. 2323-2329
7 p.
 article
44 The performance of GaAs power MESFET’s using backside copper metallization Chen, Chang-You
 2002
 46 12 p. 2085-2088
4 p.
 article
45 The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Luo, B
 2002
 46 12 p. 2185-2190
6 p.
 article
46 Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts Pinardi, Kuntjoro
 2002
 46 12 p. 2105-2110
6 p.
 article
                             46 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands