| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge sheet model for MOSFETs with an abrupt retrograde channel
|
Persson, S.
|
|
2002
|
46 |
12 |
p. 2209-2216
8 p.
|
artikel
|
| 2 |
A charge sheet model for MOSFETs with an abrupt retrograde channel
|
Persson, S.
|
|
2002
|
46 |
12 |
p. 2217-2225
9 p.
|
artikel
|
| 3 |
A compact large signal model of LDMOS
|
Tang, C.W
|
|
2002
|
46 |
12 |
p. 2111-2115
5 p.
|
artikel
|
| 4 |
Analytical expressions for intermodulation distortion of a MESFET small-signal amplifier using the nonlinear Volterra series
|
Ahmad, Imad S.
|
|
2002
|
46 |
12 |
p. 2075-2084
10 p.
|
artikel
|
| 5 |
An analytical model for charge pumping below strong inversion and accumulation
|
Bauza, D
|
|
2002
|
46 |
12 |
p. 2035-2039
5 p.
|
artikel
|
| 6 |
A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs
|
Lin, C.K
|
|
2002
|
46 |
12 |
p. 2135-2139
5 p.
|
artikel
|
| 7 |
A new process to improve the performance of 850 nm wavelength GaAs VCSELs
|
Jiang, Wen-Jang
|
|
2002
|
46 |
12 |
p. 2287-2289
3 p.
|
artikel
|
| 8 |
A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature
|
Afentakis, Themis
|
|
2002
|
46 |
12 |
p. 2301-2306
6 p.
|
artikel
|
| 9 |
A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs
|
Prégaldiny, Fabien
|
|
2002
|
46 |
12 |
p. 2191-2198
8 p.
|
artikel
|
| 10 |
A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization
|
Lukyanchikova, N.B
|
|
2002
|
46 |
12 |
p. 2053-2061
9 p.
|
artikel
|
| 11 |
Band alignments in sidewall strained Si/strained SiGe heterostructures
|
Wang, X.
|
|
2002
|
46 |
12 |
p. 2021-2025
5 p.
|
artikel
|
| 12 |
Characterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology
|
Shang, Huiling
|
|
2002
|
46 |
12 |
p. 2307-2313
7 p.
|
artikel
|
| 13 |
Composition induced design considerations for InP/Ga x In1−x As heterojunction bipolar transistors
|
Mohammad, S.Noor
|
|
2002
|
46 |
12 |
p. 2257-2267
11 p.
|
artikel
|
| 14 |
Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression
|
Kato, M
|
|
2002
|
46 |
12 |
p. 2099-2104
6 p.
|
artikel
|
| 15 |
Design of 0.1-μm pocket n-MOSFETs for low-voltage applications
|
Pang, Yon-Sup
|
|
2002
|
46 |
12 |
p. 2315-2322
8 p.
|
artikel
|
| 16 |
Effect of surface preparation on Ni Ohmic contact to 3C-SiC
|
Noh, Jae Il
|
|
2002
|
46 |
12 |
p. 2273-2279
7 p.
|
artikel
|
| 17 |
Electrical properties and deep levels in bulk solution grown GaAs crystal
|
Markov, A.V
|
|
2002
|
46 |
12 |
p. 2161-2168
8 p.
|
artikel
|
| 18 |
Equilibrium boundary conditions in the double heterostructure opto-electronic switch
|
Cai, J.
|
|
2002
|
46 |
12 |
p. 2247-2256
10 p.
|
artikel
|
| 19 |
ESD protection device design using statistical methods
|
Shigyo, N
|
|
2002
|
46 |
12 |
p. 2117-2122
6 p.
|
artikel
|
| 20 |
Extraction method for polycrystalline TFT above and below threshold model parameters
|
Estrada, M.
|
|
2002
|
46 |
12 |
p. 2295-2300
6 p.
|
artikel
|
| 21 |
GaN p–n junction diode formed by Si ion implantation into p-GaN
|
Lee, M.L
|
|
2002
|
46 |
12 |
p. 2179-2183
5 p.
|
artikel
|
| 22 |
High current bulk GaN Schottky rectifiers
|
Ip, K
|
|
2002
|
46 |
12 |
p. 2169-2172
4 p.
|
artikel
|
| 23 |
High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes
|
Lei, Po-Hsun
|
|
2002
|
46 |
12 |
p. 2041-2044
4 p.
|
artikel
|
| 24 |
High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts
|
Averine, S
|
|
2002
|
46 |
12 |
p. 2045-2051
7 p.
|
artikel
|
| 25 |
High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1−x Ge x :H layer
|
Lin, Cha-Shin
|
|
2002
|
46 |
12 |
p. 2027-2033
7 p.
|
artikel
|
| 26 |
4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes
|
Su, Yan-Kuin
|
|
2002
|
46 |
12 |
p. 2237-2240
4 p.
|
artikel
|
| 27 |
InGaN/GaN MQW p–n junction photodetectors
|
Chiou, Yu-Zung
|
|
2002
|
46 |
12 |
p. 2227-2229
3 p.
|
artikel
|
| 28 |
Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions
|
Polyakov, A.Y
|
|
2002
|
46 |
12 |
p. 2141-2146
6 p.
|
artikel
|
| 29 |
Intrinsic inversion charge in the mobility region of fully depleted SOI-MOSFETs
|
Wiatr, Maciej
|
|
2002
|
46 |
12 |
p. 2089-2097
9 p.
|
artikel
|
| 30 |
Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes
|
Cao, X.A
|
|
2002
|
46 |
12 |
p. 2291-2294
4 p.
|
artikel
|
| 31 |
Low-frequency noise analysis of Si/SiGe channel pMOSFETs
|
Li, P.W
|
|
2002
|
46 |
12 |
p. 2281-2285
5 p.
|
artikel
|
| 32 |
Mb/s data transmission over a RF fiber-optic link using a LiNbO3 microdisk modulator
|
Hossein-Zadeh, M
|
|
2002
|
46 |
12 |
p. 2173-2178
6 p.
|
artikel
|
| 33 |
Nitrogen vacancy scattering in GaN grown by metal–organic vapor phase epitaxy
|
Chen, Zhen
|
|
2002
|
46 |
12 |
p. 2069-2074
6 p.
|
artikel
|
| 34 |
Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p–n junction displacement
|
Breed, A
|
|
2002
|
46 |
12 |
p. 2199-2208
10 p.
|
artikel
|
| 35 |
Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
|
Polyakov, A.Y
|
|
2002
|
46 |
12 |
p. 2147-2153
7 p.
|
artikel
|
| 36 |
Optimised n-channel Si/SiGe HFETs design for V TH shift immunity
|
Jeamsaksiri, W
|
|
2002
|
46 |
12 |
p. 2241-2245
5 p.
|
artikel
|
| 37 |
Publisher’s note
|
|
|
2002
|
46 |
12 |
p. 2019-
1 p.
|
artikel
|
| 38 |
Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC
|
Nakamura, Tomonori
|
|
2002
|
46 |
12 |
p. 2063-2067
5 p.
|
artikel
|
| 39 |
Skin effect of on-chip copper interconnects on electromigration
|
Wu, W
|
|
2002
|
46 |
12 |
p. 2269-2272
4 p.
|
artikel
|
| 40 |
Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy
|
Polyakov, A.Y
|
|
2002
|
46 |
12 |
p. 2155-2160
6 p.
|
artikel
|
| 41 |
Study of novel techniques for reducing self-heating effects in SOI power LDMOS
|
Roig, J
|
|
2002
|
46 |
12 |
p. 2123-2133
11 p.
|
artikel
|
| 42 |
The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors
|
Chen, Tianbing
|
|
2002
|
46 |
12 |
p. 2231-2235
5 p.
|
artikel
|
| 43 |
The mechanism for the formation of slug flow in vertical gas–liquid two-phase flow
|
Sun, Baojiang
|
|
2002
|
46 |
12 |
p. 2323-2329
7 p.
|
artikel
|
| 44 |
The performance of GaAs power MESFET’s using backside copper metallization
|
Chen, Chang-You
|
|
2002
|
46 |
12 |
p. 2085-2088
4 p.
|
artikel
|
| 45 |
The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS
|
Luo, B
|
|
2002
|
46 |
12 |
p. 2185-2190
6 p.
|
artikel
|
| 46 |
Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts
|
Pinardi, Kuntjoro
|
|
2002
|
46 |
12 |
p. 2105-2110
6 p.
|
artikel
|
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