| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Charge based modeling of the inner fringing capacitance of SOI-MOSFETs
|
Wiatr, Maciej
|
|
2001
|
45 |
4 |
p. 585-592
8 p.
|
artikel
|
| 2 |
Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI
|
Faynot, O.
|
|
2001
|
45 |
4 |
p. 599-605
7 p.
|
artikel
|
| 3 |
Electron transport in silicon-on-insulator devices
|
Gámiz, F
|
|
2001
|
45 |
4 |
p. 613-620
8 p.
|
artikel
|
| 4 |
Foreword
|
Gámiz, F
|
|
2001
|
45 |
4 |
p. 539-
1 p.
|
artikel
|
| 5 |
From SOI materials to innovative devices
|
Allibert, Frédéric
|
|
2001
|
45 |
4 |
p. 559-566
8 p.
|
artikel
|
| 6 |
Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems
|
Flandre, D
|
|
2001
|
45 |
4 |
p. 541-549
9 p.
|
artikel
|
| 7 |
High frequency properties of silicon-on-insulator and novel depleted silicon materials
|
Johansson, Mikael
|
|
2001
|
45 |
4 |
p. 567-573
7 p.
|
artikel
|
| 8 |
Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs
|
Gritsch, M
|
|
2001
|
45 |
4 |
p. 621-627
7 p.
|
artikel
|
| 9 |
Integration of high voltage devices on thick SOI substrates for automotive applications
|
Heinle, U
|
|
2001
|
45 |
4 |
p. 629-632
4 p.
|
artikel
|
| 10 |
Quantum-mechanical effects in SOI devices
|
Majkusiak, B
|
|
2001
|
45 |
4 |
p. 607-611
5 p.
|
artikel
|
| 11 |
Silicon-on-insulator substrates with buried tungsten silicide layer
|
Gamble, H.S
|
|
2001
|
45 |
4 |
p. 551-557
7 p.
|
artikel
|
| 12 |
Thermally activated processes in the buried oxide of SIMOX SOI structures and devices
|
Lysenko, V.S
|
|
2001
|
45 |
4 |
p. 575-584
10 p.
|
artikel
|
| 13 |
Threshold voltage model for deep-submicron fully depleted SOI CMOS transistors including the effect of source/drain fringing fields into the buried oxide
|
van Meer, Hans
|
|
2001
|
45 |
4 |
p. 593-598
6 p.
|
artikel
|
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