| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical method for the thermal layout optimisation of multilayer structure solid-state devices
|
Pesare, Marcello
|
|
2001
|
45 |
3 |
p. 511-517
7 p.
|
artikel
|
| 2 |
An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V g=V d/2 stress mode
|
Mu, Fuchen
|
|
2001
|
45 |
3 |
p. 385-389
5 p.
|
artikel
|
| 3 |
A note on the relation between discrete and resonance energies in quantum structures
|
Dargys, A.
|
|
2001
|
45 |
3 |
p. 525-526
2 p.
|
artikel
|
| 4 |
A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes
|
Mu, Fuchen
|
|
2001
|
45 |
3 |
p. 435-439
5 p.
|
artikel
|
| 5 |
A simple subthreshold swing model for short channel MOSFETs
|
Godoy, A.
|
|
2001
|
45 |
3 |
p. 391-397
7 p.
|
artikel
|
| 6 |
Characterization of p-type In x Ga1−x N grown by metalorganic chemical vapor deposition
|
Wen, T.C.
|
|
2001
|
45 |
3 |
p. 427-430
4 p.
|
artikel
|
| 7 |
Comments on “A closed form expression for punch-through limited breakdown voltage of parallel-plane junction”
|
He, Jin
|
|
2001
|
45 |
3 |
p. 535-536
2 p.
|
artikel
|
| 8 |
Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics
|
Shamir, N
|
|
2001
|
45 |
3 |
p. 475-482
8 p.
|
artikel
|
| 9 |
Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si
|
Bera, L.K.
|
|
2001
|
45 |
3 |
p. 379-383
5 p.
|
artikel
|
| 10 |
Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN
|
Kent, D.G
|
|
2001
|
45 |
3 |
p. 467-470
4 p.
|
artikel
|
| 11 |
Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices
|
Chen, C.H.
|
|
2001
|
45 |
3 |
p. 461-465
5 p.
|
artikel
|
| 12 |
Fabrication and characteristics of Au/PZT/BIT/p-Si ferroelectric memory diode
|
Yu, Jun
|
|
2001
|
45 |
3 |
p. 411-415
5 p.
|
artikel
|
| 13 |
1/f Noise behaviors of NO-nitrided n-MOSFETs
|
Xu, J.-P.
|
|
2001
|
45 |
3 |
p. 431-433
3 p.
|
artikel
|
| 14 |
Geometry optimization of interdigitated Schottky-barrier metal–semiconductor–metal photodiode structures
|
Averine, S.V.
|
|
2001
|
45 |
3 |
p. 441-446
6 p.
|
artikel
|
| 15 |
Implanted collector profile optimization in a SiGe HBT process
|
Malm, Bengt Gunnar
|
|
2001
|
45 |
3 |
p. 399-404
6 p.
|
artikel
|
| 16 |
Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates
|
Liaw, H.M.
|
|
2001
|
45 |
3 |
p. 417-421
5 p.
|
artikel
|
| 17 |
Interface properties of N2O-annealed SiC metal oxide semiconductor devices
|
Chakraborty, S.
|
|
2001
|
45 |
3 |
p. 471-474
4 p.
|
artikel
|
| 18 |
Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor
|
Pan, Hsi-Jen
|
|
2001
|
45 |
3 |
p. 489-494
6 p.
|
artikel
|
| 19 |
Microphotonic components for a mm-wave receiver
|
Cohen, D.A.
|
|
2001
|
45 |
3 |
p. 495-505
11 p.
|
artikel
|
| 20 |
Modelling and characterisation of the input I–V curves of bipolar JFET structures showing a negative resistance behaviour
|
Bellone, S.
|
|
2001
|
45 |
3 |
p. 483-488
6 p.
|
artikel
|
| 21 |
Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs
|
Mao, Lingfeng
|
|
2001
|
45 |
3 |
p. 531-534
4 p.
|
artikel
|
| 22 |
On the mobility extraction for HMOSFETs
|
Straube, U.N.
|
|
2001
|
45 |
3 |
p. 527-529
3 p.
|
artikel
|
| 23 |
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
|
Lay, T.S.
|
|
2001
|
45 |
3 |
p. 423-426
4 p.
|
artikel
|
| 24 |
Response to the comments
|
Chung, Sang-Koo
|
|
2001
|
45 |
3 |
p. 537-
1 p.
|
artikel
|
| 25 |
Room temperature simulation of a novel quantum wire transistor
|
Haque, A
|
|
2001
|
45 |
3 |
p. 519-523
5 p.
|
artikel
|
| 26 |
Schottky rectifiers fabricated on free-standing GaN substrates
|
Johnson, J.W.
|
|
2001
|
45 |
3 |
p. 405-410
6 p.
|
artikel
|
| 27 |
S-shaped negative differential resistance in 650 nm quantum well laser diodes
|
Yin, M.
|
|
2001
|
45 |
3 |
p. 447-452
6 p.
|
artikel
|
| 28 |
Temperature dependence of turn-on processes in 4H–SiC thyristors
|
Levinshtein, Michael E
|
|
2001
|
45 |
3 |
p. 453-459
7 p.
|
artikel
|
| 29 |
Threshold voltage definition and extraction for deep-submicron MOSFETs
|
Zhou, X.
|
|
2001
|
45 |
3 |
p. 507-510
4 p.
|
artikel
|
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