| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact drain-current model for stacked-gate flash memory cells
|
Jang, Sheng-Lyang
|
|
2000
|
44 |
8 |
p. 1447-1453
7 p.
|
artikel
|
| 2 |
A deconvolution of the transient response of (100) Si/SiO2 semiconductor–insulator interface states according to small pulse excitation: evidence of different branches of charge transition
|
Beyer, R.
|
|
2000
|
44 |
8 |
p. 1463-1470
8 p.
|
artikel
|
| 3 |
A novel area efficient floating field limiting ring edge termination technique
|
De Souza, M.M
|
|
2000
|
44 |
8 |
p. 1381-1386
6 p.
|
artikel
|
| 4 |
A scalable thermal model for trench isolated bipolar devices
|
Walkey, David J.
|
|
2000
|
44 |
8 |
p. 1373-1379
7 p.
|
artikel
|
| 5 |
A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits
|
Honjo, Kazuhiko
|
|
2000
|
44 |
8 |
p. 1477-1482
6 p.
|
artikel
|
| 6 |
Characteristics of low-temperature silicon nitride (SiN x :H) using electron cyclotron resonance plasma
|
Bae, Sanghoon
|
|
2000
|
44 |
8 |
p. 1355-1360
6 p.
|
artikel
|
| 7 |
Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect
|
Niu, Guofu
|
|
2000
|
44 |
8 |
p. 1507-1509
3 p.
|
artikel
|
| 8 |
Current gain control of near infrared c-Si phototransistors
|
Shih, N.F
|
|
2000
|
44 |
8 |
p. 1399-1404
6 p.
|
artikel
|
| 9 |
Design and fabrication of planar guard ring termination for high-voltage SiC diodes
|
Sheridan, David C
|
|
2000
|
44 |
8 |
p. 1367-1372
6 p.
|
artikel
|
| 10 |
Design and modeling of bulk and SOI power LDMOSFETs for RF wireless applications
|
Trivedi, M.
|
|
2000
|
44 |
8 |
p. 1343-1354
12 p.
|
artikel
|
| 11 |
Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer
|
Yang, Chien-Cheng
|
|
2000
|
44 |
8 |
p. 1483-1486
4 p.
|
artikel
|
| 12 |
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
|
Huang, Chia-Hong
|
|
2000
|
44 |
8 |
p. 1405-1410
6 p.
|
artikel
|
| 13 |
FECTED oscillator optronic application feasibility
|
Driouch, F
|
|
2000
|
44 |
8 |
p. 1455-1461
7 p.
|
artikel
|
| 14 |
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
|
Dimitrov, R
|
|
2000
|
44 |
8 |
p. 1361-1365
5 p.
|
artikel
|
| 15 |
Low-frequency noise in metal–semiconductor contacts with local barrier height lowering
|
Bozhkov, V.G.
|
|
2000
|
44 |
8 |
p. 1487-1494
8 p.
|
artikel
|
| 16 |
Monolithic bidirectional switch.
|
Heinke, F
|
|
2000
|
44 |
8 |
p. 1393-1398
6 p.
|
artikel
|
| 17 |
Monolithic bidirectional switch.
|
Sittig, R
|
|
2000
|
44 |
8 |
p. 1387-1392
6 p.
|
artikel
|
| 18 |
Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects
|
Bormontov, Eugeny N.
|
|
2000
|
44 |
8 |
p. 1441-1446
6 p.
|
artikel
|
| 19 |
On DC modeling of the base resistance in bipolar transistors
|
Linder, M
|
|
2000
|
44 |
8 |
p. 1411-1418
8 p.
|
artikel
|
| 20 |
On the performance of in situ B-doped P+ poly-Si1− x Ge x gate material for nanometer scale MOS technology
|
Yousif, M.Y.A
|
|
2000
|
44 |
8 |
p. 1425-1429
5 p.
|
artikel
|
| 21 |
Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown
|
Mu, Fuchen
|
|
2000
|
44 |
8 |
p. 1419-1424
6 p.
|
artikel
|
| 22 |
Quantum mechanical influence and estimated errors on interface-state density evaluation by quasi-static C–V measurement
|
Omura, Yasuhisa
|
|
2000
|
44 |
8 |
p. 1511-1514
4 p.
|
artikel
|
| 23 |
Recombination center in C60/p-Si heterojunction and solar cells
|
Khan, Aurangzeb
|
|
2000
|
44 |
8 |
p. 1471-1475
5 p.
|
artikel
|
| 24 |
Study of Fowler–Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method
|
Mao, Lingfeng
|
|
2000
|
44 |
8 |
p. 1501-1506
6 p.
|
artikel
|
| 25 |
The influence of tunneling effect and inversion layer quantization effect on threshold voltage of deep submicron MOSFETs
|
Liu, Xiaoyan
|
|
2000
|
44 |
8 |
p. 1435-1439
5 p.
|
artikel
|
| 26 |
The noise analysis and noise reliability indicators of optoelectron coupled devices
|
Dai, Yisong
|
|
2000
|
44 |
8 |
p. 1495-1500
6 p.
|
artikel
|
| 27 |
Thin film transistors for displays on plastic substrates
|
Lee, M.J
|
|
2000
|
44 |
8 |
p. 1431-1434
4 p.
|
artikel
|
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