| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
|
Cho, Byung Jin
|
|
2000
|
44 |
7 |
p. 1289-1292
4 p.
|
artikel
|
| 2 |
A local charge control technique to improve the forward bias safe operating area of LIGBT
|
Hardikar, S
|
|
2000
|
44 |
7 |
p. 1213-1218
6 p.
|
artikel
|
| 3 |
Amorphous/crystalline silicon two terminal photodetector
|
Tucci, Mario
|
|
2000
|
44 |
7 |
p. 1315-1320
6 p.
|
artikel
|
| 4 |
Analog performance and application of graded-channel fully depleted SOI MOSFETs
|
Pavanello, Marcelo Antonio
|
|
2000
|
44 |
7 |
p. 1219-1222
4 p.
|
artikel
|
| 5 |
Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors
|
Datta, S
|
|
2000
|
44 |
7 |
p. 1331-1333
3 p.
|
artikel
|
| 6 |
A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs
|
Jang, Sheng-Lyang
|
|
2000
|
44 |
7 |
p. 1305-1314
10 p.
|
artikel
|
| 7 |
A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
|
Niu, Guofu
|
|
2000
|
44 |
7 |
p. 1187-1189
3 p.
|
artikel
|
| 8 |
A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system
|
Yoon, S.F.
|
|
2000
|
44 |
7 |
p. 1267-1274
8 p.
|
artikel
|
| 9 |
Avalanche injection of hot holes in the gate oxide of LDMOS transistors
|
Manzini, S
|
|
2000
|
44 |
7 |
p. 1325-1330
6 p.
|
artikel
|
| 10 |
Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors
|
Bhat, Gururaj A
|
|
2000
|
44 |
7 |
p. 1321-1324
4 p.
|
artikel
|
| 11 |
Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET
|
Ma, Yutao
|
|
2000
|
44 |
7 |
p. 1335-1339
5 p.
|
artikel
|
| 12 |
Charge transport mechanisms in HgMnTe photodiodes with ion etched p–n junctions
|
Kosyachenko, L.A.
|
|
2000
|
44 |
7 |
p. 1197-1202
6 p.
|
artikel
|
| 13 |
Consequences of space dependence of effective mass in quantum wires
|
Borovitskaya, Elena
|
|
2000
|
44 |
7 |
p. 1293-1296
4 p.
|
artikel
|
| 14 |
Effect of thermal stability of GaN epi-layer on the Schottky diodes
|
Lee, K.N
|
|
2000
|
44 |
7 |
p. 1203-1208
6 p.
|
artikel
|
| 15 |
Effects of ex situ annealing on electrical characteristics of p–n–p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors
|
Li, P.W
|
|
2000
|
44 |
7 |
p. 1169-1172
4 p.
|
artikel
|
| 16 |
Erratum to “Room temperature annealing of 5.48 MeV He induced defect in p + n and n + p grown by metal–organic chemical vapour deposition” [Solid-State Electronics Volume 44(4) 639–648]
|
Khan, Aurangzeb
|
|
2000
|
44 |
7 |
p. 1341-
1 p.
|
artikel
|
| 17 |
Fabrication and electrical characterization of 4H-SiC p + –n–n + diodes with low differential resistance
|
Vassilevski, K
|
|
2000
|
44 |
7 |
p. 1173-1177
5 p.
|
artikel
|
| 18 |
Flicker noise in deep submicron nMOS transistors
|
Lukyanchikova, N.
|
|
2000
|
44 |
7 |
p. 1239-1245
7 p.
|
artikel
|
| 19 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
|
Zhang, A.P
|
|
2000
|
44 |
7 |
p. 1157-1161
5 p.
|
artikel
|
| 20 |
GaN/SiC heterojunction bipolar transistors
|
Torvik, J.T
|
|
2000
|
44 |
7 |
p. 1229-1233
5 p.
|
artikel
|
| 21 |
Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure
|
Knaipp, Martin
|
|
2000
|
44 |
7 |
p. 1135-1143
9 p.
|
artikel
|
| 22 |
Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
|
Lee, S.-K
|
|
2000
|
44 |
7 |
p. 1179-1186
8 p.
|
artikel
|
| 23 |
Low temperature microcrystalline silicon thin film resistors on glass substrates
|
Krishnan, Anand T.
|
|
2000
|
44 |
7 |
p. 1163-1168
6 p.
|
artikel
|
| 24 |
Modelling of heterojunction acoustic charge transport devices
|
Edjeou, T.
|
|
2000
|
44 |
7 |
p. 1127-1133
7 p.
|
artikel
|
| 25 |
Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs
|
Doong, Ming-Sheng
|
|
2000
|
44 |
7 |
p. 1235-1238
4 p.
|
artikel
|
| 26 |
Novel diode-chain triggering SCR circuits for ESD protection
|
Jang, Sheng-Lyang
|
|
2000
|
44 |
7 |
p. 1297-1303
7 p.
|
artikel
|
| 27 |
Numerical simulation of small-signal microwave performance of 4H–SiC MESFET
|
Huang, Mingwei
|
|
2000
|
44 |
7 |
p. 1281-1287
7 p.
|
artikel
|
| 28 |
Picosecond response of optical nonlinearity in a GaAs/AlGaAs asymmetric triple quantum well structure
|
Ahn, H.S
|
|
2000
|
44 |
7 |
p. 1209-1212
4 p.
|
artikel
|
| 29 |
PREDICTMOS – a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations
|
Klös , Alexander
|
|
2000
|
44 |
7 |
p. 1145-1156
12 p.
|
artikel
|
| 30 |
Simulation and optimization of strained Si1− x Ge x buried channel p-MOSFETs
|
Shi, Zhonghai
|
|
2000
|
44 |
7 |
p. 1223-1228
6 p.
|
artikel
|
| 31 |
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures
|
Cao, X.A
|
|
2000
|
44 |
7 |
p. 1261-1265
5 p.
|
artikel
|
| 32 |
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures
|
Cao, X.A
|
|
2000
|
44 |
7 |
p. 1255-1259
5 p.
|
artikel
|
| 33 |
Simulation of interference patterns in solid-state biprism devices
|
Hansson, Björn A.M.
|
|
2000
|
44 |
7 |
p. 1275-1280
6 p.
|
artikel
|
| 34 |
The current-position response of a-Si:H thin film position sensitive detector and the R load, R TCO effects on it
|
Gnanvo, K.
|
|
2000
|
44 |
7 |
p. 1191-1195
5 p.
|
artikel
|
| 35 |
Validation of the small-signal model of a forward-biased p–n junction diode
|
Kumar, P.Ravi
|
|
2000
|
44 |
7 |
p. 1247-1253
7 p.
|
artikel
|
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