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                             26 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs Ikeno, Rimon
2000
44 4 p. 605-611
7 p.
artikel
2 A new mobility model to explain the transconductance overshoot effect observed in ultra-short-channel length MOSFETs Kolhatkar, Jay S.
2000
44 4 p. 691-696
6 p.
artikel
3 A new wide voltage operation regime double heterojunction bipolar transistor Cheng, Shiou-Ying
2000
44 4 p. 581-585
5 p.
artikel
4 Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors Meinertzhagen, A
2000
44 4 p. 623-630
8 p.
artikel
5 Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111) Zhu, Shiyang
2000
44 4 p. 663-671
9 p.
artikel
6 Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring Liou, Bor Wen
2000
44 4 p. 631-638
8 p.
artikel
7 Coupling-induced magnetoresistance features in strongly coupled double quantum wells Velasquez, Rober
2000
44 4 p. 697-701
5 p.
artikel
8 Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates Liaw, H.M
2000
44 4 p. 747-755
9 p.
artikel
9 Design tradeoff guidelines for n-channel delta-doped Si/SiGe heterojunction MOSFETs Ip, Brian K.
2000
44 4 p. 593-604
12 p.
artikel
10 Distributive effects on HBT S-parameters Anholt, R.
2000
44 4 p. 729-737
9 p.
artikel
11 Electrical characteristics modeling of large area boron Brezeanu, G.
2000
44 4 p. 571-579
9 p.
artikel
12 Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases Hsin, Y.M
2000
44 4 p. 587-592
6 p.
artikel
13 Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect Nicolett, A.S
2000
44 4 p. 677-684
8 p.
artikel
14 Fast switching of light-emitting diodes Brailovsky, A.B.
2000
44 4 p. 713-718
6 p.
artikel
15 GaN epilayers grown on 100 mm diameter Si(111) substrates Liaw, H.M
2000
44 4 p. 685-690
6 p.
artikel
16 High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors Cao, X.A
2000
44 4 p. 649-654
6 p.
artikel
17 Microelectronic circuit characterization via photothermal radiometry of scribeline recombination lifetime Rodriguez, M.E
2000
44 4 p. 703-711
9 p.
artikel
18 New simple procedure to determine the threshold voltage of MOSFETs Garcı́a Sánchez, F.J.
2000
44 4 p. 673-675
3 p.
artikel
19 Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFETs: Technology and Performance Islam, M.S.
2000
44 4 p. 655-661
7 p.
artikel
20 Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs Mohammadi, S
2000
44 4 p. 739-746
8 p.
artikel
21 Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/ N2 gas plasmas Basak, D
2000
44 4 p. 725-728
4 p.
artikel
22 Room temperature annealing of 5.48 MeV He induced defect in p + n and n + p grown by metal–organic chemical vapour deposition Khan, Aurangzeb
2000
44 4 p. 639-648
10 p.
artikel
23 Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length Plá, J.C.
2000
44 4 p. 719-724
6 p.
artikel
24 Surface and bulk leakage currents in high breakdown GaN rectifiers Ren, F.
2000
44 4 p. 619-622
4 p.
artikel
25 Temperature dependence of GaN high breakdown voltage diode rectifiers Chyi, J.-I
2000
44 4 p. 613-617
5 p.
artikel
26 W ohmic contact for highly doped n-type GaN films Lin, C.F.
2000
44 4 p. 757-760
4 p.
artikel
                             26 gevonden resultaten
 
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