nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs
|
Ikeno, Rimon |
|
2000 |
44 |
4 |
p. 605-611 7 p. |
artikel |
2 |
A new mobility model to explain the transconductance overshoot effect observed in ultra-short-channel length MOSFETs
|
Kolhatkar, Jay S. |
|
2000 |
44 |
4 |
p. 691-696 6 p. |
artikel |
3 |
A new wide voltage operation regime double heterojunction bipolar transistor
|
Cheng, Shiou-Ying |
|
2000 |
44 |
4 |
p. 581-585 5 p. |
artikel |
4 |
Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors
|
Meinertzhagen, A |
|
2000 |
44 |
4 |
p. 623-630 8 p. |
artikel |
5 |
Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
|
Zhu, Shiyang |
|
2000 |
44 |
4 |
p. 663-671 9 p. |
artikel |
6 |
Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring
|
Liou, Bor Wen |
|
2000 |
44 |
4 |
p. 631-638 8 p. |
artikel |
7 |
Coupling-induced magnetoresistance features in strongly coupled double quantum wells
|
Velasquez, Rober |
|
2000 |
44 |
4 |
p. 697-701 5 p. |
artikel |
8 |
Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates
|
Liaw, H.M |
|
2000 |
44 |
4 |
p. 747-755 9 p. |
artikel |
9 |
Design tradeoff guidelines for n-channel delta-doped Si/SiGe heterojunction MOSFETs
|
Ip, Brian K. |
|
2000 |
44 |
4 |
p. 593-604 12 p. |
artikel |
10 |
Distributive effects on HBT S-parameters
|
Anholt, R. |
|
2000 |
44 |
4 |
p. 729-737 9 p. |
artikel |
11 |
Electrical characteristics modeling of large area boron
|
Brezeanu, G. |
|
2000 |
44 |
4 |
p. 571-579 9 p. |
artikel |
12 |
Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases
|
Hsin, Y.M |
|
2000 |
44 |
4 |
p. 587-592 6 p. |
artikel |
13 |
Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
|
Nicolett, A.S |
|
2000 |
44 |
4 |
p. 677-684 8 p. |
artikel |
14 |
Fast switching of light-emitting diodes
|
Brailovsky, A.B. |
|
2000 |
44 |
4 |
p. 713-718 6 p. |
artikel |
15 |
GaN epilayers grown on 100 mm diameter Si(111) substrates
|
Liaw, H.M |
|
2000 |
44 |
4 |
p. 685-690 6 p. |
artikel |
16 |
High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
|
Cao, X.A |
|
2000 |
44 |
4 |
p. 649-654 6 p. |
artikel |
17 |
Microelectronic circuit characterization via photothermal radiometry of scribeline recombination lifetime
|
Rodriguez, M.E |
|
2000 |
44 |
4 |
p. 703-711 9 p. |
artikel |
18 |
New simple procedure to determine the threshold voltage of MOSFETs
|
Garcı́a Sánchez, F.J. |
|
2000 |
44 |
4 |
p. 673-675 3 p. |
artikel |
19 |
Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFETs: Technology and Performance
|
Islam, M.S. |
|
2000 |
44 |
4 |
p. 655-661 7 p. |
artikel |
20 |
Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs
|
Mohammadi, S |
|
2000 |
44 |
4 |
p. 739-746 8 p. |
artikel |
21 |
Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/ N2 gas plasmas
|
Basak, D |
|
2000 |
44 |
4 |
p. 725-728 4 p. |
artikel |
22 |
Room temperature annealing of 5.48 MeV He induced defect in p + n and n + p grown by metal–organic chemical vapour deposition
|
Khan, Aurangzeb |
|
2000 |
44 |
4 |
p. 639-648 10 p. |
artikel |
23 |
Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length
|
Plá, J.C. |
|
2000 |
44 |
4 |
p. 719-724 6 p. |
artikel |
24 |
Surface and bulk leakage currents in high breakdown GaN rectifiers
|
Ren, F. |
|
2000 |
44 |
4 |
p. 619-622 4 p. |
artikel |
25 |
Temperature dependence of GaN high breakdown voltage diode rectifiers
|
Chyi, J.-I |
|
2000 |
44 |
4 |
p. 613-617 5 p. |
artikel |
26 |
W ohmic contact for highly doped n-type GaN films
|
Lin, C.F. |
|
2000 |
44 |
4 |
p. 757-760 4 p. |
artikel |