| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs
|
Ikeno, Rimon
|
|
2000
|
44 |
4 |
p. 605-611
7 p.
|
artikel
|
| 2 |
A new mobility model to explain the transconductance overshoot effect observed in ultra-short-channel length MOSFETs
|
Kolhatkar, Jay S.
|
|
2000
|
44 |
4 |
p. 691-696
6 p.
|
artikel
|
| 3 |
A new wide voltage operation regime double heterojunction bipolar transistor
|
Cheng, Shiou-Ying
|
|
2000
|
44 |
4 |
p. 581-585
5 p.
|
artikel
|
| 4 |
Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors
|
Meinertzhagen, A
|
|
2000
|
44 |
4 |
p. 623-630
8 p.
|
artikel
|
| 5 |
Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
|
Zhu, Shiyang
|
|
2000
|
44 |
4 |
p. 663-671
9 p.
|
artikel
|
| 6 |
Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring
|
Liou, Bor Wen
|
|
2000
|
44 |
4 |
p. 631-638
8 p.
|
artikel
|
| 7 |
Coupling-induced magnetoresistance features in strongly coupled double quantum wells
|
Velasquez, Rober
|
|
2000
|
44 |
4 |
p. 697-701
5 p.
|
artikel
|
| 8 |
Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates
|
Liaw, H.M
|
|
2000
|
44 |
4 |
p. 747-755
9 p.
|
artikel
|
| 9 |
Design tradeoff guidelines for n-channel delta-doped Si/SiGe heterojunction MOSFETs
|
Ip, Brian K.
|
|
2000
|
44 |
4 |
p. 593-604
12 p.
|
artikel
|
| 10 |
Distributive effects on HBT S-parameters
|
Anholt, R.
|
|
2000
|
44 |
4 |
p. 729-737
9 p.
|
artikel
|
| 11 |
Electrical characteristics modeling of large area boron
|
Brezeanu, G.
|
|
2000
|
44 |
4 |
p. 571-579
9 p.
|
artikel
|
| 12 |
Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases
|
Hsin, Y.M
|
|
2000
|
44 |
4 |
p. 587-592
6 p.
|
artikel
|
| 13 |
Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
|
Nicolett, A.S
|
|
2000
|
44 |
4 |
p. 677-684
8 p.
|
artikel
|
| 14 |
Fast switching of light-emitting diodes
|
Brailovsky, A.B.
|
|
2000
|
44 |
4 |
p. 713-718
6 p.
|
artikel
|
| 15 |
GaN epilayers grown on 100 mm diameter Si(111) substrates
|
Liaw, H.M
|
|
2000
|
44 |
4 |
p. 685-690
6 p.
|
artikel
|
| 16 |
High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
|
Cao, X.A
|
|
2000
|
44 |
4 |
p. 649-654
6 p.
|
artikel
|
| 17 |
Microelectronic circuit characterization via photothermal radiometry of scribeline recombination lifetime
|
Rodriguez, M.E
|
|
2000
|
44 |
4 |
p. 703-711
9 p.
|
artikel
|
| 18 |
New simple procedure to determine the threshold voltage of MOSFETs
|
Garcı́a Sánchez, F.J.
|
|
2000
|
44 |
4 |
p. 673-675
3 p.
|
artikel
|
| 19 |
Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFETs: Technology and Performance
|
Islam, M.S.
|
|
2000
|
44 |
4 |
p. 655-661
7 p.
|
artikel
|
| 20 |
Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs
|
Mohammadi, S
|
|
2000
|
44 |
4 |
p. 739-746
8 p.
|
artikel
|
| 21 |
Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/ N2 gas plasmas
|
Basak, D
|
|
2000
|
44 |
4 |
p. 725-728
4 p.
|
artikel
|
| 22 |
Room temperature annealing of 5.48 MeV He induced defect in p + n and n + p grown by metal–organic chemical vapour deposition
|
Khan, Aurangzeb
|
|
2000
|
44 |
4 |
p. 639-648
10 p.
|
artikel
|
| 23 |
Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length
|
Plá, J.C.
|
|
2000
|
44 |
4 |
p. 719-724
6 p.
|
artikel
|
| 24 |
Surface and bulk leakage currents in high breakdown GaN rectifiers
|
Ren, F.
|
|
2000
|
44 |
4 |
p. 619-622
4 p.
|
artikel
|
| 25 |
Temperature dependence of GaN high breakdown voltage diode rectifiers
|
Chyi, J.-I
|
|
2000
|
44 |
4 |
p. 613-617
5 p.
|
artikel
|
| 26 |
W ohmic contact for highly doped n-type GaN films
|
Lin, C.F.
|
|
2000
|
44 |
4 |
p. 757-760
4 p.
|
artikel
|
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