| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC
|
Vathulya, Vickram R
|
|
2000
|
44 |
2 |
p. 309-315
7 p.
|
artikel
|
| 2 |
Characterization of 4H-SiC gate turn-off thyristor
|
Cao, Lihui
|
|
2000
|
44 |
2 |
p. 347-352
6 p.
|
artikel
|
| 3 |
Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor
|
Huang, Alex Q.
|
|
2000
|
44 |
2 |
p. 325-340
16 p.
|
artikel
|
| 4 |
DC and high-frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors
|
Alekseev, Egor
|
|
2000
|
44 |
2 |
p. 245-252
8 p.
|
artikel
|
| 5 |
Demonstration of the first 4H-SiC avalanche photodiodes
|
Feng Yan,
|
|
2000
|
44 |
2 |
p. 341-346
6 p.
|
artikel
|
| 6 |
Electrothermal analysis of SiC power devices using physically-based device simulation
|
Lades, M.
|
|
2000
|
44 |
2 |
p. 359-368
10 p.
|
artikel
|
| 7 |
Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs
|
Asbeck, P.M.
|
|
2000
|
44 |
2 |
p. 211-219
9 p.
|
artikel
|
| 8 |
GaN/AlGaN HBT fabrication
|
Ren, F
|
|
2000
|
44 |
2 |
p. 239-244
6 p.
|
artikel
|
| 9 |
GaN PN junction issues and developments
|
Hickman, R
|
|
2000
|
44 |
2 |
p. 377-381
5 p.
|
artikel
|
| 10 |
GaN/SiC HBTs and related issues
|
Van Zeghbroeck, B.
|
|
2000
|
44 |
2 |
p. 265-270
6 p.
|
artikel
|
| 11 |
GaN/SiC heterojunction bipolar transistors
|
Schaff, William J
|
|
2000
|
44 |
2 |
p. 259-264
6 p.
|
artikel
|
| 12 |
GaN/SiC heterojunctions grown by LP–CVD
|
Topf, Michael
|
|
2000
|
44 |
2 |
p. 271-275
5 p.
|
artikel
|
| 13 |
4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications
|
Agarwal, Anant K
|
|
2000
|
44 |
2 |
p. 303-308
6 p.
|
artikel
|
| 14 |
In-depth analysis of SiC GTO thyristor performance using numerical simulations
|
Shah, P.B
|
|
2000
|
44 |
2 |
p. 353-358
6 p.
|
artikel
|
| 15 |
Materials theory based modeling of wide band gap semiconductors: from basic properties to devices
|
Brennan, Kevin F
|
|
2000
|
44 |
2 |
p. 195-204
10 p.
|
artikel
|
| 16 |
MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications
|
Doolittle, William A
|
|
2000
|
44 |
2 |
p. 229-238
10 p.
|
artikel
|
| 17 |
Preface
|
Brown, April
|
|
2000
|
44 |
2 |
p. 193-
1 p.
|
artikel
|
| 18 |
Prospects of bipolar diamond devices
|
Aleksov, A
|
|
2000
|
44 |
2 |
p. 369-375
7 p.
|
artikel
|
| 19 |
SiC and GaN bipolar power devices
|
Chow, T.P.
|
|
2000
|
44 |
2 |
p. 277-301
25 p.
|
artikel
|
| 20 |
Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors
|
Lambert, D.J.H
|
|
2000
|
44 |
2 |
p. 253-257
5 p.
|
artikel
|
| 21 |
Switching characteristics of silicon carbide power PiN diodes
|
Elasser, A.
|
|
2000
|
44 |
2 |
p. 317-323
7 p.
|
artikel
|
| 22 |
The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices
|
Bandić, Z.Z
|
|
2000
|
44 |
2 |
p. 221-228
8 p.
|
artikel
|
| 23 |
Two-dimensional hole gas induced by piezoelectric and pyroelectric charges
|
Shur, M.S
|
|
2000
|
44 |
2 |
p. 205-210
6 p.
|
artikel
|
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