| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced heterostructure transistor technologies for wireless communications
|
Wang, N-L.Larry
|
|
1999
|
43 |
8 |
p. 1399-1403
5 p.
|
artikel
|
| 2 |
A 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit
|
Harada, Naoki
|
|
1999
|
43 |
8 |
p. 1513-1518
6 p.
|
artikel
|
| 3 |
A low power dissipation 0.4∼7 GHz transimpedance amplifier IC for SCM optical communication system
|
Fujimoto, Kazuhisa
|
|
1999
|
43 |
8 |
p. 1413-1417
5 p.
|
artikel
|
| 4 |
A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability
|
Rohdin, Hans
|
|
1999
|
43 |
8 |
p. 1645-1654
10 p.
|
artikel
|
| 5 |
Analysis of Sb-based resonant interband tunnel diodes for circuit modeling
|
Schulman, J.N
|
|
1999
|
43 |
8 |
p. 1367-1371
5 p.
|
artikel
|
| 6 |
A new method for evaluation of surface recombination in heterojunction bipolar transistors by magnetotransport
|
Nozu, Tetsuro
|
|
1999
|
43 |
8 |
p. 1347-1353
7 p.
|
artikel
|
| 7 |
A novel GaAs flip-chip power MODFET with high gain and efficiency
|
Tanaka, Tsuyoshi
|
|
1999
|
43 |
8 |
p. 1405-1411
7 p.
|
artikel
|
| 8 |
Applications of HEMT devices in space communication systems and equipment: a European perspective
|
Comparini, Massimo Claudio
|
|
1999
|
43 |
8 |
p. 1577-1589
13 p.
|
artikel
|
| 9 |
A preliminary study of MIS diodes with nm-thin GaAs-oxide layers
|
Sugimura, Tomoyuki
|
|
1999
|
43 |
8 |
p. 1571-1576
6 p.
|
artikel
|
| 10 |
Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE
|
Miyamoto, Y
|
|
1999
|
43 |
8 |
p. 1395-1398
4 p.
|
artikel
|
| 11 |
Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications
|
Hsu, Shawn S.H
|
|
1999
|
43 |
8 |
p. 1429-1436
8 p.
|
artikel
|
| 12 |
Conference
|
|
|
1999
|
43 |
8 |
p. 1323-
1 p.
|
artikel
|
| 13 |
Editorial
|
|
|
1999
|
43 |
8 |
p. 1321-
1 p.
|
artikel
|
| 14 |
44% efficiency operation of power heterojunction FET at near pinch-off for 3.5 V wide-band CDMA cellular phones
|
Nishimura, T.B
|
|
1999
|
43 |
8 |
p. 1419-1424
6 p.
|
artikel
|
| 15 |
First demonstration of low temperature grown InP-channel HFET transferred onto GaAs substrate
|
Kunze, M
|
|
1999
|
43 |
8 |
p. 1535-1540
6 p.
|
artikel
|
| 16 |
Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications
|
Koyama, Yuji
|
|
1999
|
43 |
8 |
p. 1483-1488
6 p.
|
artikel
|
| 17 |
GaN-based electronic devices
|
Shur, M.S
|
|
1999
|
43 |
8 |
p. 1451-1458
8 p.
|
artikel
|
| 18 |
GaN MODFET microwave power technology for future generation radar and communications systems
|
Grider, D.E
|
|
1999
|
43 |
8 |
p. 1473-1478
6 p.
|
artikel
|
| 19 |
Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine
|
Sai, Hironobu
|
|
1999
|
43 |
8 |
p. 1541-1546
6 p.
|
artikel
|
| 20 |
Heterostructure-based high-speed/high-frequency electronic circuit applications
|
Zampardi, P.J.
|
|
1999
|
43 |
8 |
p. 1633-1643
11 p.
|
artikel
|
| 21 |
Heterostructure circuit applications in optical communications
|
Lunardi, Leda
|
|
1999
|
43 |
8 |
p. 1627-1632
6 p.
|
artikel
|
| 22 |
Improvement of 0.1 μm-gate InGaAs/AlGaAs HEMT performance by suppression of electro-chemical etching in deionized water
|
Ohshima, Tomoyuki
|
|
1999
|
43 |
8 |
p. 1519-1526
8 p.
|
artikel
|
| 23 |
InGaP HBT technology for RF and microwave instrumentation
|
Low, Tom
|
|
1999
|
43 |
8 |
p. 1437-1444
8 p.
|
artikel
|
| 24 |
InP-based complementary HBT amplifiers for use in communication systems
|
Sawdai, Donald
|
|
1999
|
43 |
8 |
p. 1507-1512
6 p.
|
artikel
|
| 25 |
In-situ characterization technique of compound semiconductor heterostructure growth and device processing steps based on UHV contactless capacitance-voltage measurement
|
Takahashi, Hiroshi
|
|
1999
|
43 |
8 |
p. 1561-1570
10 p.
|
artikel
|
| 26 |
MM-wave HEMT based circuits and their system applications
|
Dickmann, Jürgen
|
|
1999
|
43 |
8 |
p. 1607-1612
6 p.
|
artikel
|
| 27 |
MM-wave integrated circuits and their applications to communication and automotive systems
|
Quentin, P.
|
|
1999
|
43 |
8 |
p. 1599-1606
8 p.
|
artikel
|
| 28 |
n- and p-Type SiGe HFETs and circuits
|
König, U
|
|
1999
|
43 |
8 |
p. 1383-1388
6 p.
|
artikel
|
| 29 |
Novel HEMT processing technologies and their circuit applications
|
Adesida, I
|
|
1999
|
43 |
8 |
p. 1333-1338
6 p.
|
artikel
|
| 30 |
Passivation of InP-based HBTs
|
Driad, R
|
|
1999
|
43 |
8 |
p. 1445-1450
6 p.
|
artikel
|
| 31 |
Photoemission studies on heterostructure bipolar transistors
|
Schuermeyer, Fritz
|
|
1999
|
43 |
8 |
p. 1555-1560
6 p.
|
artikel
|
| 32 |
Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy
|
Matsunami, K
|
|
1999
|
43 |
8 |
p. 1547-1553
7 p.
|
artikel
|
| 33 |
Process design for SiGe-HBTs prepared using cold-wall UHV/CVD
|
Sato, F
|
|
1999
|
43 |
8 |
p. 1389-1393
5 p.
|
artikel
|
| 34 |
Progress towards ultra-wideband AlGaN/GaN MMICs
|
Zolper, J.C
|
|
1999
|
43 |
8 |
p. 1479-1482
4 p.
|
artikel
|
| 35 |
Relationship between gate lag, power drift, and power slump of pseudomorphic high electron mobility transistors
|
Hwang, James C.M
|
|
1999
|
43 |
8 |
p. 1325-1331
7 p.
|
artikel
|
| 36 |
Reliability investigation of heavily C-doped InGaP/GaAs HBTs operated under a very high current-density condition
|
Mochizuki, K
|
|
1999
|
43 |
8 |
p. 1425-1428
4 p.
|
artikel
|
| 37 |
Resonant-tunneling mixed-signal circuit technology
|
Seabaugh, A
|
|
1999
|
43 |
8 |
p. 1355-1365
11 p.
|
artikel
|
| 38 |
RF device trends for mobile communications
|
Muraguchi, Masahiro
|
|
1999
|
43 |
8 |
p. 1591-1598
8 p.
|
artikel
|
| 39 |
Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance
|
Xu, D
|
|
1999
|
43 |
8 |
p. 1527-1533
7 p.
|
artikel
|
| 40 |
SiC and GaN wide bandgap semiconductor materials and devices
|
Burk Jr., A.A
|
|
1999
|
43 |
8 |
p. 1459-1464
6 p.
|
artikel
|
| 41 |
SiGe HBTs and ICs for optical-fiber communication systems
|
Washio, Katsuyoshi
|
|
1999
|
43 |
8 |
p. 1619-1625
7 p.
|
artikel
|
| 42 |
SiGe-HBTs for mobile communication
|
Schüppen, Andreas
|
|
1999
|
43 |
8 |
p. 1373-1381
9 p.
|
artikel
|
| 43 |
SiGe heterostructure CMOS circuits and applications
|
Parker, E.H.C
|
|
1999
|
43 |
8 |
p. 1497-1506
10 p.
|
artikel
|
| 44 |
Suppression of G DS frequency dispersion in heterojunction FETs with a partially depleted p-type buffer layer
|
Ohno, Yasuo
|
|
1999
|
43 |
8 |
p. 1339-1345
7 p.
|
artikel
|
| 45 |
Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond
|
Hokazono, A
|
|
1999
|
43 |
8 |
p. 1465-1471
7 p.
|
artikel
|
| 46 |
Technologies for making full use of high-speed IC performance in the development of 40-Gb/s optical receivers
|
Emura, Katsumi
|
|
1999
|
43 |
8 |
p. 1613-1618
6 p.
|
artikel
|
| 47 |
Transferred-substrate HBT integrated circuits
|
Rodwell, Mark
|
|
1999
|
43 |
8 |
p. 1489-1495
7 p.
|
artikel
|
| 48 |
Wafer bonding technology for optoelectronic integrated devices
|
Wada, Hiroshi
|
|
1999
|
43 |
8 |
p. 1655-1663
9 p.
|
artikel
|
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