| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion
|
Yoshitomi, Takashi
|
|
1999
|
43 |
7 |
p. 1209-1214
6 p.
|
article
|
| 2 |
A measurement method of the ideal I–V characteristics of diodes up to the built-in voltage limit
|
Bellone, S
|
|
1999
|
43 |
7 |
p. 1201-1207
7 p.
|
article
|
| 3 |
A new determination of minority carrier generation characteristics in a MOS channel—CCD process by DLTS
|
Ahaitouf, Az
|
|
1999
|
43 |
7 |
p. 1225-1230
6 p.
|
article
|
| 4 |
A novel SiC/Si heterojunction diode with high-temperature bi-directional N-shaped negative-differential-resistances for high-temperature applications
|
Wu, Kuen-Hsien
|
|
1999
|
43 |
7 |
p. 1215-1217
3 p.
|
article
|
| 5 |
A physics-based short-channel current–voltage model for buried-channel MOSFETs
|
Chyau, Chwan-Gwo
|
|
1999
|
43 |
7 |
p. 1177-1188
12 p.
|
article
|
| 6 |
A procedure for the extraction of the bulk-charge effect parameter in MOSFET models
|
Garcı́a Sánchez, F.J.
|
|
1999
|
43 |
7 |
p. 1295-1298
4 p.
|
article
|
| 7 |
A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation
|
Yoshitomi, Takashi
|
|
1999
|
43 |
7 |
p. 1219-1224
6 p.
|
article
|
| 8 |
Bulk recombination in the neutral base region of abrupt InP/InGaAs HBTs
|
López-González, Juan M
|
|
1999
|
43 |
7 |
p. 1307-1311
5 p.
|
article
|
| 9 |
Design and fabrication of low power polysilicon sources
|
Das, N.C
|
|
1999
|
43 |
7 |
p. 1239-1244
6 p.
|
article
|
| 10 |
Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film
|
Kim, Y.S
|
|
1999
|
43 |
7 |
p. 1189-1193
5 p.
|
article
|
| 11 |
Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors
|
Datta, S
|
|
1999
|
43 |
7 |
p. 1299-1305
7 p.
|
article
|
| 12 |
Formation of palladium-silicided shallow n+p junctions by phosphorus implantation into thin Pd or Pd2Si films on a silicon substrate and subsequent anneal
|
Juang, M.H
|
|
1999
|
43 |
7 |
p. 1289-1294
6 p.
|
article
|
| 13 |
High performance δ-modulation-doped Si/SiGe heterostructure FET’s grown by MBE
|
Wu, San Lein
|
|
1999
|
43 |
7 |
p. 1313-1316
4 p.
|
article
|
| 14 |
Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)
|
Farmakis, F.V
|
|
1999
|
43 |
7 |
p. 1259-1266
8 p.
|
article
|
| 15 |
Implanted p–n junctions in GaN
|
Cao, X.A
|
|
1999
|
43 |
7 |
p. 1235-1238
4 p.
|
article
|
| 16 |
Measurement of stress distribution inside crystals by multi-channel Raman scattering tomography
|
Yukawa, Yoko
|
|
1999
|
43 |
7 |
p. 1195-1199
5 p.
|
article
|
| 17 |
1.55 μm Er-doped GaN LED
|
Shen, H
|
|
1999
|
43 |
7 |
p. 1231-1234
4 p.
|
article
|
| 18 |
Mesoscopic transport phenomena in ultrashort channel MOSFETs
|
Wirth, G
|
|
1999
|
43 |
7 |
p. 1245-1250
6 p.
|
article
|
| 19 |
Modelling of self-heating effect in thin SOI and Partial SOI LDMOS power devices
|
Lim, H.T
|
|
1999
|
43 |
7 |
p. 1267-1280
14 p.
|
article
|
| 20 |
On the energy level of EL2 in GaAs
|
Look, D.C
|
|
1999
|
43 |
7 |
p. 1317-1319
3 p.
|
article
|
| 21 |
Some properties of Au/n-CdTe Schottky barriers as established by I–V characteristics and photocurrent spectroscopy
|
Herrmann, K.H.
|
|
1999
|
43 |
7 |
p. 1251-1258
8 p.
|
article
|
| 22 |
Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study
|
Babiker, S
|
|
1999
|
43 |
7 |
p. 1281-1288
8 p.
|
article
|
Journal description