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                             22 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion Yoshitomi, Takashi
1999
43 7 p. 1209-1214
6 p.
artikel
2 A measurement method of the ideal I–V characteristics of diodes up to the built-in voltage limit Bellone, S
1999
43 7 p. 1201-1207
7 p.
artikel
3 A new determination of minority carrier generation characteristics in a MOS channel—CCD process by DLTS Ahaitouf, Az
1999
43 7 p. 1225-1230
6 p.
artikel
4 A novel SiC/Si heterojunction diode with high-temperature bi-directional N-shaped negative-differential-resistances for high-temperature applications Wu, Kuen-Hsien
1999
43 7 p. 1215-1217
3 p.
artikel
5 A physics-based short-channel current–voltage model for buried-channel MOSFETs Chyau, Chwan-Gwo
1999
43 7 p. 1177-1188
12 p.
artikel
6 A procedure for the extraction of the bulk-charge effect parameter in MOSFET models Garcı́a Sánchez, F.J.
1999
43 7 p. 1295-1298
4 p.
artikel
7 A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation Yoshitomi, Takashi
1999
43 7 p. 1219-1224
6 p.
artikel
8 Bulk recombination in the neutral base region of abrupt InP/InGaAs HBTs López-González, Juan M
1999
43 7 p. 1307-1311
5 p.
artikel
9 Design and fabrication of low power polysilicon sources Das, N.C
1999
43 7 p. 1239-1244
6 p.
artikel
10 Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film Kim, Y.S
1999
43 7 p. 1189-1193
5 p.
artikel
11 Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors Datta, S
1999
43 7 p. 1299-1305
7 p.
artikel
12 Formation of palladium-silicided shallow n+p junctions by phosphorus implantation into thin Pd or Pd2Si films on a silicon substrate and subsequent anneal Juang, M.H
1999
43 7 p. 1289-1294
6 p.
artikel
13 High performance δ-modulation-doped Si/SiGe heterostructure FET’s grown by MBE Wu, San Lein
1999
43 7 p. 1313-1316
4 p.
artikel
14 Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs) Farmakis, F.V
1999
43 7 p. 1259-1266
8 p.
artikel
15 Implanted p–n junctions in GaN Cao, X.A
1999
43 7 p. 1235-1238
4 p.
artikel
16 Measurement of stress distribution inside crystals by multi-channel Raman scattering tomography Yukawa, Yoko
1999
43 7 p. 1195-1199
5 p.
artikel
17 1.55 μm Er-doped GaN LED Shen, H
1999
43 7 p. 1231-1234
4 p.
artikel
18 Mesoscopic transport phenomena in ultrashort channel MOSFETs Wirth, G
1999
43 7 p. 1245-1250
6 p.
artikel
19 Modelling of self-heating effect in thin SOI and Partial SOI LDMOS power devices Lim, H.T
1999
43 7 p. 1267-1280
14 p.
artikel
20 On the energy level of EL2 in GaAs Look, D.C
1999
43 7 p. 1317-1319
3 p.
artikel
21 Some properties of Au/n-CdTe Schottky barriers as established by I–V characteristics and photocurrent spectroscopy Herrmann, K.H.
1999
43 7 p. 1251-1258
8 p.
artikel
22 Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study Babiker, S
1999
43 7 p. 1281-1288
8 p.
artikel
                             22 gevonden resultaten
 
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