nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion
|
Yoshitomi, Takashi |
|
1999 |
43 |
7 |
p. 1209-1214 6 p. |
artikel |
2 |
A measurement method of the ideal I–V characteristics of diodes up to the built-in voltage limit
|
Bellone, S |
|
1999 |
43 |
7 |
p. 1201-1207 7 p. |
artikel |
3 |
A new determination of minority carrier generation characteristics in a MOS channel—CCD process by DLTS
|
Ahaitouf, Az |
|
1999 |
43 |
7 |
p. 1225-1230 6 p. |
artikel |
4 |
A novel SiC/Si heterojunction diode with high-temperature bi-directional N-shaped negative-differential-resistances for high-temperature applications
|
Wu, Kuen-Hsien |
|
1999 |
43 |
7 |
p. 1215-1217 3 p. |
artikel |
5 |
A physics-based short-channel current–voltage model for buried-channel MOSFETs
|
Chyau, Chwan-Gwo |
|
1999 |
43 |
7 |
p. 1177-1188 12 p. |
artikel |
6 |
A procedure for the extraction of the bulk-charge effect parameter in MOSFET models
|
Garcı́a Sánchez, F.J. |
|
1999 |
43 |
7 |
p. 1295-1298 4 p. |
artikel |
7 |
A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation
|
Yoshitomi, Takashi |
|
1999 |
43 |
7 |
p. 1219-1224 6 p. |
artikel |
8 |
Bulk recombination in the neutral base region of abrupt InP/InGaAs HBTs
|
López-González, Juan M |
|
1999 |
43 |
7 |
p. 1307-1311 5 p. |
artikel |
9 |
Design and fabrication of low power polysilicon sources
|
Das, N.C |
|
1999 |
43 |
7 |
p. 1239-1244 6 p. |
artikel |
10 |
Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film
|
Kim, Y.S |
|
1999 |
43 |
7 |
p. 1189-1193 5 p. |
artikel |
11 |
Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors
|
Datta, S |
|
1999 |
43 |
7 |
p. 1299-1305 7 p. |
artikel |
12 |
Formation of palladium-silicided shallow n+p junctions by phosphorus implantation into thin Pd or Pd2Si films on a silicon substrate and subsequent anneal
|
Juang, M.H |
|
1999 |
43 |
7 |
p. 1289-1294 6 p. |
artikel |
13 |
High performance δ-modulation-doped Si/SiGe heterostructure FET’s grown by MBE
|
Wu, San Lein |
|
1999 |
43 |
7 |
p. 1313-1316 4 p. |
artikel |
14 |
Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)
|
Farmakis, F.V |
|
1999 |
43 |
7 |
p. 1259-1266 8 p. |
artikel |
15 |
Implanted p–n junctions in GaN
|
Cao, X.A |
|
1999 |
43 |
7 |
p. 1235-1238 4 p. |
artikel |
16 |
Measurement of stress distribution inside crystals by multi-channel Raman scattering tomography
|
Yukawa, Yoko |
|
1999 |
43 |
7 |
p. 1195-1199 5 p. |
artikel |
17 |
1.55 μm Er-doped GaN LED
|
Shen, H |
|
1999 |
43 |
7 |
p. 1231-1234 4 p. |
artikel |
18 |
Mesoscopic transport phenomena in ultrashort channel MOSFETs
|
Wirth, G |
|
1999 |
43 |
7 |
p. 1245-1250 6 p. |
artikel |
19 |
Modelling of self-heating effect in thin SOI and Partial SOI LDMOS power devices
|
Lim, H.T |
|
1999 |
43 |
7 |
p. 1267-1280 14 p. |
artikel |
20 |
On the energy level of EL2 in GaAs
|
Look, D.C |
|
1999 |
43 |
7 |
p. 1317-1319 3 p. |
artikel |
21 |
Some properties of Au/n-CdTe Schottky barriers as established by I–V characteristics and photocurrent spectroscopy
|
Herrmann, K.H. |
|
1999 |
43 |
7 |
p. 1251-1258 8 p. |
artikel |
22 |
Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study
|
Babiker, S |
|
1999 |
43 |
7 |
p. 1281-1288 8 p. |
artikel |