| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
|
Mahapatra, S
|
|
1999
|
43 |
5 |
p. 915-922
8 p.
|
artikel
|
| 2 |
An accurate HJFET current–voltage model including temperature dependence for a circuit simulator
|
Matsuno, Noriaki
|
|
1999
|
43 |
5 |
p. 977-984
8 p.
|
artikel
|
| 3 |
Analysis of In0.52Al0.48As/In0.53Ga0.47As/InP quantum wire MODFETs employing coupled well channels
|
Heller, E.K
|
|
1999
|
43 |
5 |
p. 901-914
14 p.
|
artikel
|
| 4 |
An analytical model for small signal parameters in HEMTs including the effect of source/drain extrinsic resistances
|
Abdel Aziz, M.
|
|
1999
|
43 |
5 |
p. 891-900
10 p.
|
artikel
|
| 5 |
Cooling performance of integrated thermoelectric microcooler
|
Min, Gao
|
|
1999
|
43 |
5 |
p. 923-929
7 p.
|
artikel
|
| 6 |
Crowding effects and low frequency noise in polysilicon emitter bipolar transistors
|
Routoure, Jean-Marc
|
|
1999
|
43 |
5 |
p. 931-936
6 p.
|
artikel
|
| 7 |
Dc characterization of lateral bipolar devices in standard CMOS technology: a new model for base current partitioning
|
Corsi, F.
|
|
1999
|
43 |
5 |
p. 883-889
7 p.
|
artikel
|
| 8 |
Defect related dark current and charge injection in Si1− x Ge x /Si multiple quantum wells
|
Huang, X.L
|
|
1999
|
43 |
5 |
p. 953-959
7 p.
|
artikel
|
| 9 |
Effectiveness of metallic mirror for promoting the photoresponse of InGaAs PIN photodiode
|
Ho, Chong-Long
|
|
1999
|
43 |
5 |
p. 961-967
7 p.
|
artikel
|
| 10 |
Effect of implant damage on the gate oxide thickness
|
Vuong, H.-H
|
|
1999
|
43 |
5 |
p. 985-988
4 p.
|
artikel
|
| 11 |
Effect of statistical process variation of MOSFET on hot carrier lifetime
|
Kim, Hyojune
|
|
1999
|
43 |
5 |
p. 989-991
3 p.
|
artikel
|
| 12 |
Fast detrapping and extraction of holes in Al0.25Ga0.75As/GaAs structures
|
Dargys, A
|
|
1999
|
43 |
5 |
p. 993-995
3 p.
|
artikel
|
| 13 |
Low-frequency noise in electrically stressed n-MOSFETs
|
Ren, L
|
|
1999
|
43 |
5 |
p. 849-856
8 p.
|
artikel
|
| 14 |
On the flicker noise in submicron silicon MOSFETs
|
Simoen, E.
|
|
1999
|
43 |
5 |
p. 865-882
18 p.
|
artikel
|
| 15 |
Parallel conduction and non-linear optoelectronic response of an n-channel pseudomorphic high electron mobility transistor
|
Kim, D.M
|
|
1999
|
43 |
5 |
p. 943-951
9 p.
|
artikel
|
| 16 |
Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency
|
M'Gafad, N.
|
|
1999
|
43 |
5 |
p. 857-864
8 p.
|
artikel
|
| 17 |
Short-channel effects in Si/Si1−x Ge x retrograde double quantum well p-MOSFETs
|
Yousif, M.Y.A
|
|
1999
|
43 |
5 |
p. 969-976
8 p.
|
artikel
|
| 18 |
Stacked PIN diode structures for microwave switching
|
Gribnikov, Z.S
|
|
1999
|
43 |
5 |
p. 997-1000
4 p.
|
artikel
|
| 19 |
The microwave performance of SiGe HBTs and its amplifiers
|
Zhao, Li Xin
|
|
1999
|
43 |
5 |
p. 937-941
5 p.
|
artikel
|
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