| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abnormal extracted value of effective channel length for off-set gate MOSFET
|
Terada, Kazuo
|
|
1999
|
43 |
4 |
p. 829-831
3 p.
|
artikel
|
| 2 |
A high speed and low power SOI inverter using active body-bias
|
Gil, Joonho
|
|
1999
|
43 |
4 |
p. 791-799
9 p.
|
artikel
|
| 3 |
An analytical model for the saturation characteristics of bipolar-mode static induction transistors
|
Yang, Jianhong
|
|
1999
|
43 |
4 |
p. 823-827
5 p.
|
artikel
|
| 4 |
Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation
|
Vandamme, L.K.J.
|
|
1999
|
43 |
4 |
p. 697-700
4 p.
|
artikel
|
| 5 |
A numerical study of AlGaAs/GaAs HBTs
|
Li, Bin
|
|
1999
|
43 |
4 |
p. 839-843
5 p.
|
artikel
|
| 6 |
Characterization of GaP pyramidal textured p–n junctions
|
Mei, X
|
|
1999
|
43 |
4 |
p. 779-783
5 p.
|
artikel
|
| 7 |
Direct extraction of semiconductor device parameters using lateral optimization method
|
Ortiz-Conde, A
|
|
1999
|
43 |
4 |
p. 845-848
4 p.
|
artikel
|
| 8 |
Discussion
|
|
|
1999
|
43 |
4 |
p. 815-817
3 p.
|
artikel
|
| 9 |
Discussion
|
|
|
1999
|
43 |
4 |
p. 819-822
4 p.
|
artikel
|
| 10 |
Experimental determination of the effective mobility in NMOSFETs: a comparative study
|
Banqueri, J.
|
|
1999
|
43 |
4 |
p. 701-707
7 p.
|
artikel
|
| 11 |
Extraction of the trap density and mobility in poly-CdSe thin films
|
Lee, M.J
|
|
1999
|
43 |
4 |
p. 833-838
6 p.
|
artikel
|
| 12 |
1/f Noise in amorphous silicon thin film transistors: effect of scaling down
|
Rhayem, J
|
|
1999
|
43 |
4 |
p. 713-721
9 p.
|
artikel
|
| 13 |
Impurity bound polaron effects on the second harmonic generation in quantum well wires
|
Guo, Kang-Xian
|
|
1999
|
43 |
4 |
p. 709-712
4 p.
|
artikel
|
| 14 |
Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)
|
Cheng, Shiou-Ying
|
|
1999
|
43 |
4 |
p. 755-760
6 p.
|
artikel
|
| 15 |
I–V methods to extract junction parameters with special emphasis on low series resistance
|
Kaminski, A
|
|
1999
|
43 |
4 |
p. 741-745
5 p.
|
artikel
|
| 16 |
Li-ion battery operated power amplifier MMICs utilizing SrTiO3 capacitors and heterojunction FETs for PDC and CDMA cellular phones
|
Iwata, N
|
|
1999
|
43 |
4 |
p. 747-753
7 p.
|
artikel
|
| 17 |
Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes
|
Chen, Lung-Chien
|
|
1999
|
43 |
4 |
p. 809-814
6 p.
|
artikel
|
| 18 |
Low frequency excess noise measurements in high frequency polysilicon emitter bipolar transistors
|
Routoure, Jean Marc
|
|
1999
|
43 |
4 |
p. 729-740
12 p.
|
artikel
|
| 19 |
Measurement of interface states parameters of Si1−x−y Ge xCy/TiW Schottky contacts using Schottky capacitance spectroscopy
|
Zamora, M
|
|
1999
|
43 |
4 |
p. 801-808
8 p.
|
artikel
|
| 20 |
0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy
|
Yoon, S.F
|
|
1999
|
43 |
4 |
p. 785-789
5 p.
|
artikel
|
| 21 |
Reconstruction of doping profiles in semiconductor materials using optical tomography
|
Zeni, Luigi
|
|
1999
|
43 |
4 |
p. 761-769
9 p.
|
artikel
|
| 22 |
Simulation of Si power MOSFET under cryogenic conditions
|
Mauriello, R.J.
|
|
1999
|
43 |
4 |
p. 771-777
7 p.
|
artikel
|
| 23 |
Structural and photoelectric studies on double barrier quantum well infrared detectors
|
Wu, Wen-Gang
|
|
1999
|
43 |
4 |
p. 723-727
5 p.
|
artikel
|
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