| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation
|
Galdin, S.
|
|
1999
|
43 |
10 |
p. 1869-1877
9 p.
|
artikel
|
| 2 |
A lateral MOS-controlled thyristor-enhanced insulated gate bipolar transistor
|
Qin, Zuxin
|
|
1999
|
43 |
10 |
p. 1845-1853
9 p.
|
artikel
|
| 3 |
An analytic model for turn off in the silicon-on-insulator LIGBT
|
Garner, D.M
|
|
1999
|
43 |
10 |
p. 1855-1868
14 p.
|
artikel
|
| 4 |
An experimental analysis of the dual gate emitter switched thyristor (DG-EST)
|
Sawant, Shankar
|
|
1999
|
43 |
10 |
p. 1901-1908
8 p.
|
artikel
|
| 5 |
Contacts of titanium nitride to n- and p-type gallium nitride films
|
Dimitriadis, C.A
|
|
1999
|
43 |
10 |
p. 1969-1972
4 p.
|
artikel
|
| 6 |
Deep centers in AlGaN-based light emitting diode structures
|
Polyakov, A.Y
|
|
1999
|
43 |
10 |
p. 1929-1936
8 p.
|
artikel
|
| 7 |
Design considerations and experimental analysis for silicon carbide power rectifiers
|
Khemka, V
|
|
1999
|
43 |
10 |
p. 1945-1962
18 p.
|
artikel
|
| 8 |
Discussion
|
|
|
1999
|
43 |
10 |
p. 1967-1968
2 p.
|
artikel
|
| 9 |
Discussion
|
|
|
1999
|
43 |
10 |
p. 1963-1965
3 p.
|
artikel
|
| 10 |
Effect of illumination on Schrodinger's wave function in the quantum well of MODFET and related device characteristics
|
Singh, P.K.
|
|
1999
|
43 |
10 |
p. 1833-1843
11 p.
|
artikel
|
| 11 |
Numerical analysis of the detectivity in n+–n–p and p+–p–n GaInAsSb infrared detectors
|
Tian, Yuan
|
|
1999
|
43 |
10 |
p. 1879-1891
13 p.
|
artikel
|
| 12 |
Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors
|
Lim, Jong-Won
|
|
1999
|
43 |
10 |
p. 1893-1900
8 p.
|
artikel
|
| 13 |
Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
|
Morkoç, Hadis
|
|
1999
|
43 |
10 |
p. 1909-1927
19 p.
|
artikel
|
| 14 |
Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy
|
Polyakov, A.Y
|
|
1999
|
43 |
10 |
p. 1937-1943
7 p.
|
artikel
|
| 15 |
Unified model for short-channel poly-Si TFTs
|
Iñiguez, Benjamı́n
|
|
1999
|
43 |
10 |
p. 1821-1831
11 p.
|
artikel
|
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