| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A 42-GHz (f max) SiGe-base HBT using reduced pressure CVD
|
Cho, D.-H.
|
|
1998
|
42 |
9 |
p. 1641-1649
9 p.
|
article
|
| 2 |
A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
|
Simoen, E.
|
|
1998
|
42 |
9 |
p. 1679-1687
9 p.
|
article
|
| 3 |
An improved definition for modeling the threshold voltage of MOSFETs
|
Ortiz-Conde, A.
|
|
1998
|
42 |
9 |
p. 1743-1746
4 p.
|
article
|
| 4 |
A selforganized double potential barrier in tunneling light emitting silicon MOS structures
|
Altukhov, P.D
|
|
1998
|
42 |
9 |
p. 1657-1660
4 p.
|
article
|
| 5 |
Back surface field effects in the 17.3% efficient n-type dendritic web silicon solar cells
|
Narasimha, S.
|
|
1998
|
42 |
9 |
p. 1631-1640
10 p.
|
article
|
| 6 |
Characteristics of ZnS:Mn thin film electroluminescent device using layered BaTiO3 thin film structures
|
Song, M.H.
|
|
1998
|
42 |
9 |
p. 1711-1717
7 p.
|
article
|
| 7 |
Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles
|
Suzuki, Kunihiro
|
|
1998
|
42 |
9 |
p. 1671-1678
8 p.
|
article
|
| 8 |
3D Finite-difference electrothermal model for multifinger HBTs with thermal shunt and emitter ballast resistance
|
Dhondt, F.
|
|
1998
|
42 |
9 |
p. 1723-1729
7 p.
|
article
|
| 9 |
Greatly suppressed stress-induced shift of GIDL in N2O-based n-MOSFET's
|
Xu, J.P
|
|
1998
|
42 |
9 |
p. 1665-1669
5 p.
|
article
|
| 10 |
High resolution pattern transfer in III-nitrides using BCl3/Ar inductively coupled plasmas
|
Cho, Hyun
|
|
1998
|
42 |
9 |
p. 1719-1722
4 p.
|
article
|
| 11 |
Influence of electron scattering on current instability in field effect transistors
|
Cheremisin, M.V.
|
|
1998
|
42 |
9 |
p. 1737-1742
6 p.
|
article
|
| 12 |
Influence of the collector resistance on the performance of accumulation channel driven bipolar transistor
|
Thapar, Naresh
|
|
1998
|
42 |
9 |
p. 1697-1703
7 p.
|
article
|
| 13 |
Junction barrier Schottky diodes in 6H SiC
|
Zetterling, Carl-Mikael
|
|
1998
|
42 |
9 |
p. 1757-1759
3 p.
|
article
|
| 14 |
Optical rotary power at the resonance of the Terbium 7F6 → 5D4 line in Terbium Gallium Garnet
|
Chen, X.
|
|
1998
|
42 |
9 |
p. 1765-1766
2 p.
|
article
|
| 15 |
Optimum design of the field plate in the cylindrical p+n junction: analytical approach
|
Yang, Kyoung
|
|
1998
|
42 |
9 |
p. 1651-1655
5 p.
|
article
|
| 16 |
Perturbation calculation of donor states in a spherical quantum dot
|
Bose, C.
|
|
1998
|
42 |
9 |
p. 1661-1663
3 p.
|
article
|
| 17 |
Radiation response and injection annealing of p+n InGaP solar cells
|
Walters, R.J.
|
|
1998
|
42 |
9 |
p. 1747-1756
10 p.
|
article
|
| 18 |
Suggestions for the development of GaN-based photodiodes
|
Pulfrey, D.L.
|
|
1998
|
42 |
9 |
p. 1731-1736
6 p.
|
article
|
| 19 |
The effects of substrates on the characteristics of polycrystalline silicon thin film transistors
|
Wang, Y.Z
|
|
1998
|
42 |
9 |
p. 1689-1696
8 p.
|
article
|
| 20 |
The tunnel diode as a thyristor emitter
|
Gribnikov, Z.S.
|
|
1998
|
42 |
9 |
p. 1761-1763
3 p.
|
article
|
| 21 |
Wet chemical etching of NiFe, NiFeCo AND NiMnSb for magnetic device fabrication
|
Cao, X.A.
|
|
1998
|
42 |
9 |
p. 1705-1710
6 p.
|
article
|
Journal description