| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system
|
Cutolo, A
|
|
1998
|
42 |
6 |
p. 1035-1038
4 p.
|
artikel
|
| 2 |
A simple approach to the capacitance technique for determination of interface state density of a metal–semiconductor contact
|
Pandey, Santosh
|
|
1998
|
42 |
6 |
p. 943-949
7 p.
|
artikel
|
| 3 |
Device degradation during low temperature ECR-CVD. Part I: GaAs MESFETs
|
Lee, J.W.
|
|
1998
|
42 |
6 |
p. 1015-1020
6 p.
|
artikel
|
| 4 |
Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs
|
Lee, J.W.
|
|
1998
|
42 |
6 |
p. 1021-1025
5 p.
|
artikel
|
| 5 |
Device degradation during low temperature ECR-CVD. PART III: GaAs/InGaP HEMTs
|
Lee, J.W
|
|
1998
|
42 |
6 |
p. 1027-1030
4 p.
|
artikel
|
| 6 |
Dielectric relaxation of amorphous and textured MIS-capacitor thin films
|
Fernández-Gutiérrez, Floirán
|
|
1998
|
42 |
6 |
p. 925-930
6 p.
|
artikel
|
| 7 |
Effects of screening on the two-dimensional electron transport properties in modulation doped heterostructures
|
Sen, O.
|
|
1998
|
42 |
6 |
p. 987-991
5 p.
|
artikel
|
| 8 |
Electrical characterization of anodically grown native oxide on GaInSb
|
Yuan, H.X
|
|
1998
|
42 |
6 |
p. 979-985
7 p.
|
artikel
|
| 9 |
Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis
|
Niu, G.F
|
|
1998
|
42 |
6 |
p. 1057-1058
2 p.
|
artikel
|
| 10 |
High frequency CV measurements of SiC MOS capacitors
|
Berberich, S
|
|
1998
|
42 |
6 |
p. 915-920
6 p.
|
artikel
|
| 11 |
Impact of energy band-gap grading on responsivity of an Al x Ga1−x N ultraviolet p–n detector
|
Malachowski, M.J.
|
|
1998
|
42 |
6 |
p. 963-967
5 p.
|
artikel
|
| 12 |
IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels
|
Lutz, J.
|
|
1998
|
42 |
6 |
p. 931-938
8 p.
|
artikel
|
| 13 |
Improved reliability of NO treated NH3-nitrided oxide with regard to O2 annealing
|
Mazumder, M.K
|
|
1998
|
42 |
6 |
p. 921-924
4 p.
|
artikel
|
| 14 |
Influence of external bias on photoelectric properties of silicon MIS/IL structures
|
Yerokhov, V.Yu.
|
|
1998
|
42 |
6 |
p. 883-889
7 p.
|
artikel
|
| 15 |
InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy
|
Tevke, Ahmet
|
|
1998
|
42 |
6 |
p. 1039-1044
6 p.
|
artikel
|
| 16 |
Interconnection capacitance models for VLSI circuits
|
Wong, Shyh-Chyi
|
|
1998
|
42 |
6 |
p. 969-977
9 p.
|
artikel
|
| 17 |
Low-frequency 1/f noise model for short-channel LDD MOSFETs
|
Jang, Sheng-Lyang
|
|
1998
|
42 |
6 |
p. 891-899
9 p.
|
artikel
|
| 18 |
Low temperature ECR-CVD of SiNX for III-V device passivation
|
Lee, J.W
|
|
1998
|
42 |
6 |
p. 1031-1034
4 p.
|
artikel
|
| 19 |
Manufacture of AlGaInP visible light-emitting diodes by MOCVD & VPE
|
Qingke, Zeng
|
|
1998
|
42 |
6 |
p. 993-995
3 p.
|
artikel
|
| 20 |
Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
|
Shih, Wei-Kai
|
|
1998
|
42 |
6 |
p. 997-1006
10 p.
|
artikel
|
| 21 |
Multiple-cell square-type layout design for output transistors in submicron CMOS technology to save silicon area
|
Ker, Ming-Dou
|
|
1998
|
42 |
6 |
p. 1007-1014
8 p.
|
artikel
|
| 22 |
On the anomalous behavior of the relative amplitude of RTS noise
|
Vandamme, L.K.J.
|
|
1998
|
42 |
6 |
p. 901-905
5 p.
|
artikel
|
| 23 |
Performance of a p-channel heterojunction fet with p+-GaAs selectively grown contact layers for GaAs complementary ICs
|
Furuhata, Naoki
|
|
1998
|
42 |
6 |
p. 1049-1055
7 p.
|
artikel
|
| 24 |
Plasma charging damage during over-etch time of aluminum
|
Shin, Hyungcheol
|
|
1998
|
42 |
6 |
p. 911-913
3 p.
|
artikel
|
| 25 |
Polarization control in vertical-cavity surface emitting laser using uniaxial stress
|
Dutta, Achyut Kumar
|
|
1998
|
42 |
6 |
p. 907-910
4 p.
|
artikel
|
| 26 |
Schottky barrier heights of In0.5(Al x Ga1−x )0.5P (0≤x≤1) lattice matched to GaAs
|
Wang, Y.C
|
|
1998
|
42 |
6 |
p. 1045-1048
4 p.
|
artikel
|
| 27 |
Single contact electron beam induced currents (SCEBIC) in semiconductor junctions. Part I: Quantitative verification of SCEBIC model
|
Kolachina, S.
|
|
1998
|
42 |
6 |
p. 957-962
6 p.
|
artikel
|
| 28 |
The small signal AC impedance of a short p–n junction diode
|
Garcia-Belmonte, G.
|
|
1998
|
42 |
6 |
p. 939-941
3 p.
|
artikel
|
| 29 |
Threshold voltage and charge control considerations in double quantum wellSi/Si1−x Ge x p-type MOSFETs
|
Yousif, M.Y.A.
|
|
1998
|
42 |
6 |
p. 951-956
6 p.
|
artikel
|
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