| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analysis of carrier mobility and concentration in Si-doped GaN grown by reactive molecular beam epitaxy
|
Tang, H.
|
|
1998
|
42 |
5 |
p. 839-847
9 p.
|
article
|
| 2 |
An analytical surrounding gate MOSFET model
|
Jang, S-L.
|
|
1998
|
42 |
5 |
p. 721-726
6 p.
|
article
|
| 3 |
An experimental evaluation of the on-state performance of trench IGBT designs
|
Thapar, Naresh
|
|
1998
|
42 |
5 |
p. 771-776
6 p.
|
article
|
| 4 |
A review of the metal–GaN contact technology
|
Liu, Q.Z.
|
|
1998
|
42 |
5 |
p. 677-691
15 p.
|
article
|
| 5 |
Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas
|
Lee, J.W
|
|
1998
|
42 |
5 |
p. 733-742
10 p.
|
article
|
| 6 |
Damage in thin SiO2–Si structures induced by RIE-mode nitrogen and oxygen plasma
|
Paskaleva, A
|
|
1998
|
42 |
5 |
p. 777-784
8 p.
|
article
|
| 7 |
Deep traps in high resistivity AlGaN films
|
Polyakov, A.Y.
|
|
1998
|
42 |
5 |
p. 831-838
8 p.
|
article
|
| 8 |
Deposition of indium tin oxide films by laser ablation: Processing and characterization
|
Calı̀, C
|
|
1998
|
42 |
5 |
p. 877-879
3 p.
|
article
|
| 9 |
Design considerations for integrated inductors in conventional CMOS technologies
|
Smithhisler, Chris
|
|
1998
|
42 |
5 |
p. 699-704
6 p.
|
article
|
| 10 |
Discussion
|
|
|
1998
|
42 |
5 |
p. 705-713
9 p.
|
article
|
| 11 |
Discussion
|
|
|
1998
|
42 |
5 |
p. 693-698
6 p.
|
article
|
| 12 |
Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs
|
Ren, F
|
|
1998
|
42 |
5 |
p. 749-753
5 p.
|
article
|
| 13 |
Erratum
|
|
|
1998
|
42 |
5 |
p. 881-
1 p.
|
article
|
| 14 |
Fabrication of ZnSe/Si P–I–N photodiode by IR furnace chemical vapor deposition
|
Chang, C.C.
|
|
1998
|
42 |
5 |
p. 817-822
6 p.
|
article
|
| 15 |
FET and HEMT thermal impedances
|
Anholt, R.
|
|
1998
|
42 |
5 |
p. 849-855
7 p.
|
article
|
| 16 |
Frequency dependent characteristics of an optically controlled InP MIS capacitor
|
Madheswaran, M.
|
|
1998
|
42 |
5 |
p. 795-801
7 p.
|
article
|
| 17 |
HBT thermal element design using an electro/thermal simulator
|
Anholt, R.
|
|
1998
|
42 |
5 |
p. 857-864
8 p.
|
article
|
| 18 |
High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
|
Wang, J.J
|
|
1998
|
42 |
5 |
p. 743-747
5 p.
|
article
|
| 19 |
Modelling of low power cw laser beam heating effects on A GaAs substrate
|
Abbott, D.
|
|
1998
|
42 |
5 |
p. 809-816
8 p.
|
article
|
| 20 |
New method for the determination of carrier lifetime in diodes using a sinusoidal current pulse
|
Cerdeira, Antonio
|
|
1998
|
42 |
5 |
p. 727-731
5 p.
|
article
|
| 21 |
Non-quasistatic simultaneous HF/LF-CV measurements for rapid characterization of MOS structures
|
Sorge, Roland
|
|
1998
|
42 |
5 |
p. 761-770
10 p.
|
article
|
| 22 |
SiC flame sensors for gas turbine control systems
|
Brown, Dale M
|
|
1998
|
42 |
5 |
p. 755-760
6 p.
|
article
|
| 23 |
Theoretical limitation of the RBSOA of MOS-controlled thyristors
|
You, B.
|
|
1998
|
42 |
5 |
p. 785-794
10 p.
|
article
|
| 24 |
Thermal impedances of multi-finger heterojunction bipolar transistors
|
Anholt, R.
|
|
1998
|
42 |
5 |
p. 865-869
5 p.
|
article
|
| 25 |
Thermal stability of Ti/Pt/Au ohmic contacts on InAs/graded InGaAs layers
|
Lee, Ching-Ting
|
|
1998
|
42 |
5 |
p. 871-875
5 p.
|
article
|
| 26 |
Trade-off between speed and efficiency of silicon metal–i–n photodetectors
|
Ghayour, R.
|
|
1998
|
42 |
5 |
p. 715-720
6 p.
|
article
|
| 27 |
Variation of the exponent of flicker noise in MOSFETs
|
Wolters, D.R.
|
|
1998
|
42 |
5 |
p. 803-808
6 p.
|
article
|
| 28 |
Well supply voltage effect on escape current of guard rings in epitaxial CMOS technology
|
Huang, Chih-Yao
|
|
1998
|
42 |
5 |
p. 823-830
8 p.
|
article
|
Journal description