| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A contribution to the analysis of the I–V characteristics of Schottky structures
|
Donoval, Daniel
|
|
1998
|
42 |
2 |
p. 235-241
7 p.
|
article
|
| 2 |
Composition and charge properties of Al/Ti–SiO2–InP (100) structures
|
Malyshev, S.A
|
|
1998
|
42 |
2 |
p. 217-220
4 p.
|
article
|
| 3 |
Conservation laws and charge transport across heterojunction barriers
|
Horák, Michal
|
|
1998
|
42 |
2 |
p. 269-276
8 p.
|
article
|
| 4 |
C–V dependence of inhomogeneous Schottky diodes
|
Osvald, J.
|
|
1998
|
42 |
2 |
p. 191-195
5 p.
|
article
|
| 5 |
Deep level investigation on n-In0.35Ga0.65As/GaAs structures
|
Gombia, E
|
|
1998
|
42 |
2 |
p. 211-215
5 p.
|
article
|
| 6 |
Electrical characterisation of Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation
|
Horváth, Zs.J.
|
|
1998
|
42 |
2 |
p. 221-228
8 p.
|
article
|
| 7 |
Electrical characterisation of silicon wafer bonding structures
|
Dimitrakis, P.
|
|
1998
|
42 |
2 |
p. 201-204
4 p.
|
article
|
| 8 |
Electrical characterization of Au/SiO x /n-GaAs junctions
|
Ivanèo, J.
|
|
1998
|
42 |
2 |
p. 229-233
5 p.
|
article
|
| 9 |
Ion irradiation induced defects in epitaxial GaAs layers
|
Arpatzanis, N
|
|
1998
|
42 |
2 |
p. 277-282
6 p.
|
article
|
| 10 |
Iridium-based multilayer contacts to n-GaAs
|
Lalinský, T
|
|
1998
|
42 |
2 |
p. 205-210
6 p.
|
article
|
| 11 |
MAGNETIC FIELD INDUCED RESONANCE IN A DOUBLE-BARRIER RESONANT TUNNELING DIODE
|
Belyaev, A.E
|
|
1998
|
42 |
2 |
p. 257-261
5 p.
|
article
|
| 12 |
MOCVD growth of In x Ga1−x As/GaAs multiple quantum well and superlattice structures for optical modulators
|
Hasenöhrl, S
|
|
1998
|
42 |
2 |
p. 263-267
5 p.
|
article
|
| 13 |
Optical properties of semi-insulating GaAs irradiated by neutrons
|
Mudroň, J.
|
|
1998
|
42 |
2 |
p. 243-246
4 p.
|
article
|
| 14 |
Optoelectronic d.c. and r.f. behavior ofInP/InGaAs based HEMTs
|
Marso, M
|
|
1998
|
42 |
2 |
p. 197-200
4 p.
|
article
|
| 15 |
Preparation, characterisation and application of microscopic linear Hall probe arrays
|
Cambel, V.
|
|
1998
|
42 |
2 |
p. 247-251
5 p.
|
article
|
| 16 |
Schottky contacts on CF4/H2 reactive ion etched β-SiC
|
Constantinidis, G
|
|
1998
|
42 |
2 |
p. 253-256
4 p.
|
article
|
Journal description