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33 results found

no	title	author	magazine	year	volume	issue	page(s)	type
1	A comparison between the interface properties of N2O-nitrided and N2O-grown oxides	Xu, J.P		1998	42	11	p. 2053-2056 4 p.	article
2	Analysis of the FP–JTE planar junction termination	Wu, Z.L		1998	42	11	p. 2097-2100 4 p.	article
3	Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET	Chhokra, Sunita A.		1998	42	11	p. 1917-1924 8 p.	article
4	Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices	Thapar, Naresh		1998	42	11	p. 1975-1979 5 p.	article
5	A new charge pumping model considering bulk trap states in polysilicon thin film transistor	Kim, Kee-Jong		1998	42	11	p. 1897-1903 7 p.	article
6	A new self-aligned and T-shaped gate technology for GaAs power MESFETs	Lee, Jong-Lam		1998	42	11	p. 2063-2068 6 p.	article
7	A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors	Ma, Pingxi		1998	42	11	p. 2023-2026 4 p.	article
8	A study of the DRAM process simplification by using blanket memory cell source/drain implantation	Juang, M.H		1998	42	11	p. 2047-2051 5 p.	article
9	Beryllium doped InP/InGaAsP heterojunction bipolar transistors	Shamir, N		1998	42	11	p. 2039-2045 7 p.	article
10	CO-implantation of Si and Be in SI GaAs for improved device performance	Dutt, M.B.		1998	42	11	p. 1905-1910 6 p.	article
11	Delay time analysis of AlGaAs/In x Ga1−x As (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions	Niwa, Takaki		1998	42	11	p. 1911-1916 6 p.	article
12	Dispersive decay of positive oxide charge after high-field stress	Wu, Yongjun		1998	42	11	p. 1993-1996 4 p.	article
13	Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiN x	Hahn, Y.B		1998	42	11	p. 2017-2021 5 p.	article
14	Effects of inversion layer quantization on channel profile engineering for nMOSFETs with 0.1 μm channel lengths	Saha, Samar		1998	42	11	p. 1985-1991 7 p.	article
15	Electron injection effect on formation and decomposition of C–H complexes in C-doped GaAs Base of H+-implanted InGaP/GaAs HBTs	Kawano, Akihiro		1998	42	11	p. 2057-2061 5 p.	article
16	Energy bandgap of Al x Ga1−x As1−y Sb y and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures	Anwar, A.F.M		1998	42	11	p. 2101-2104 4 p.	article
17	ESD protection for slew-rate-controlled output buffer in a 0.5 μm CMOS SRAM technology	Ker, Ming-Dou		1998	42	11	p. 2005-2016 12 p.	article
18	Formation of NiSi-silicided shallow p+n junctions by BF2 + implantation into thin Ni or NiSi Films on Si substrates and subsequent anneal	Juang, M.H		1998	42	11	p. 1953-1958 6 p.	article
19	Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2	Kameda, Etsumasa		1998	42	11	p. 2105-2111 7 p.	article
20	Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C–V measurements	Kim, Jongoh		1998	42	11	p. 2113-2116 4 p.	article
21	High frequency noise of MOSFETs. II. Experiments	Chen, C.H.		1998	42	11	p. 2083-2092 10 p.	article
22	High frequency noise of MOSFETs I Modeling	Chen, C.H.		1998	42	11	p. 2069-2081 13 p.	article
23	Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar	Diniz, J.A		1998	42	11	p. 1947-1951 5 p.	article
24	Monte Carlo study of Si–n-MOSFETs including the quantization of carriers	Ohkura, Yasuyuki		1998	42	11	p. 1997-2004 8 p.	article
25	Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability	Beister, G.		1998	42	11	p. 1939-1945 7 p.	article
26	Reliability performance for InGaAsP/InP laser diodes mounted on different sizes of heat blocks in TO packages	Yoon, Hyun-Jae		1998	42	11	p. 1969-1974 6 p.	article
27	Signal quality in digitally modulated scaled laser diodes	Thiyagarajan, S.M.K		1998	42	11	p. 2027-2030 4 p.	article
28	Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films	Polyakov, A.Y		1998	42	11	p. 1959-1967 9 p.	article
29	Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs	Kuo, C.W		1998	42	11	p. 1933-1937 5 p.	article
30	Study of lateral polysilicon PN diodes C–V characteristics: Modeling and experiments	Amrani, M		1998	42	11	p. 1925-1931 7 p.	article
31	Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes	Borchi, E.		1998	42	11	p. 2093-2096 4 p.	article
32	The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors	Trabzon, L		1998	42	11	p. 2031-2037 7 p.	article
33	Transient response of gallium arsenide and silicon solar cells under laser pulse	Jain, Raj K		1998	42	11	p. 1981-1983 3 p.	article

33 results found

Koninklijke Bibliotheek - National Library of the Netherlands