Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             33 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison between the interface properties of N2O-nitrided and N2O-grown oxides Xu, J.P
 1998
 42 11 p. 2053-2056
4 p.
 artikel
2 Analysis of the FP–JTE planar junction termination Wu, Z.L
 1998
 42 11 p. 2097-2100
4 p.
 artikel
3 Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET Chhokra, Sunita A.
 1998
 42 11 p. 1917-1924
8 p.
 artikel
4 Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices Thapar, Naresh
 1998
 42 11 p. 1975-1979
5 p.
 artikel
5 A new charge pumping model considering bulk trap states in polysilicon thin film transistor Kim, Kee-Jong
 1998
 42 11 p. 1897-1903
7 p.
 artikel
6 A new self-aligned and T-shaped gate technology for GaAs power MESFETs Lee, Jong-Lam
 1998
 42 11 p. 2063-2068
6 p.
 artikel
7 A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors Ma, Pingxi
 1998
 42 11 p. 2023-2026
4 p.
 artikel
8 A study of the DRAM process simplification by using blanket memory cell source/drain implantation Juang, M.H
 1998
 42 11 p. 2047-2051
5 p.
 artikel
9 Beryllium doped InP/InGaAsP heterojunction bipolar transistors Shamir, N
 1998
 42 11 p. 2039-2045
7 p.
 artikel
10 CO-implantation of Si and Be in SI GaAs for improved device performance Dutt, M.B.
 1998
 42 11 p. 1905-1910
6 p.
 artikel
11 Delay time analysis of AlGaAs/In x Ga1−x As (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions Niwa, Takaki
 1998
 42 11 p. 1911-1916
6 p.
 artikel
12 Dispersive decay of positive oxide charge after high-field stress Wu, Yongjun
 1998
 42 11 p. 1993-1996
4 p.
 artikel
13 Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiN x Hahn, Y.B
 1998
 42 11 p. 2017-2021
5 p.
 artikel
14 Effects of inversion layer quantization on channel profile engineering for nMOSFETs with 0.1 μm channel lengths Saha, Samar
 1998
 42 11 p. 1985-1991
7 p.
 artikel
15 Electron injection effect on formation and decomposition of C–H complexes in C-doped GaAs Base of H+-implanted InGaP/GaAs HBTs Kawano, Akihiro
 1998
 42 11 p. 2057-2061
5 p.
 artikel
16 Energy bandgap of Al x Ga1−x As1−y Sb y and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures Anwar, A.F.M
 1998
 42 11 p. 2101-2104
4 p.
 artikel
17 ESD protection for slew-rate-controlled output buffer in a 0.5 μm CMOS SRAM technology Ker, Ming-Dou
 1998
 42 11 p. 2005-2016
12 p.
 artikel
18 Formation of NiSi-silicided shallow p+n junctions by BF2 + implantation into thin Ni or NiSi Films on Si substrates and subsequent anneal Juang, M.H
 1998
 42 11 p. 1953-1958
6 p.
 artikel
19 Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2 Kameda, Etsumasa
 1998
 42 11 p. 2105-2111
7 p.
 artikel
20 Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C–V measurements Kim, Jongoh
 1998
 42 11 p. 2113-2116
4 p.
 artikel
21 High frequency noise of MOSFETs. II. Experiments Chen, C.H.
 1998
 42 11 p. 2083-2092
10 p.
 artikel
22 High frequency noise of MOSFETs I Modeling Chen, C.H.
 1998
 42 11 p. 2069-2081
13 p.
 artikel
23 Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar Diniz, J.A
 1998
 42 11 p. 1947-1951
5 p.
 artikel
24 Monte Carlo study of Si–n-MOSFETs including the quantization of carriers Ohkura, Yasuyuki
 1998
 42 11 p. 1997-2004
8 p.
 artikel
25 Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability Beister, G.
 1998
 42 11 p. 1939-1945
7 p.
 artikel
26 Reliability performance for InGaAsP/InP laser diodes mounted on different sizes of heat blocks in TO packages Yoon, Hyun-Jae
 1998
 42 11 p. 1969-1974
6 p.
 artikel
27 Signal quality in digitally modulated scaled laser diodes Thiyagarajan, S.M.K
 1998
 42 11 p. 2027-2030
4 p.
 artikel
28 Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films Polyakov, A.Y
 1998
 42 11 p. 1959-1967
9 p.
 artikel
29 Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs Kuo, C.W
 1998
 42 11 p. 1933-1937
5 p.
 artikel
30 Study of lateral polysilicon PN diodes C–V characteristics: Modeling and experiments Amrani, M
 1998
 42 11 p. 1925-1931
7 p.
 artikel
31 Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes Borchi, E.
 1998
 42 11 p. 2093-2096
4 p.
 artikel
32 The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors Trabzon, L
 1998
 42 11 p. 2031-2037
7 p.
 artikel
33 Transient response of gallium arsenide and silicon solar cells under laser pulse Jain, Raj K
 1998
 42 11 p. 1981-1983
3 p.
 artikel
                             33 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland