| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the operating-speed and power consumption of GaAs DCFL D-type flip-flops
|
Maeda, T
|
|
1997
|
41 |
6 |
p. 807-811
5 p.
|
artikel
|
| 2 |
Analytical model for high injection in Si SiGe heterojunction bipolar transistors (HBT)
|
Ma, P
|
|
1997
|
41 |
6 |
p. 913-916
4 p.
|
artikel
|
| 3 |
Characteristics of metallic polymer and Au Schottky contacts on cleaved surfaces of InSe(:Er)
|
Abay, B
|
|
1997
|
41 |
6 |
p. 924-926
3 p.
|
artikel
|
| 4 |
Charge transport in amorphous and tetragonal semiconducting YBaCuO films
|
Çelik-Butler, Z
|
|
1997
|
41 |
6 |
p. 895-899
5 p.
|
artikel
|
| 5 |
DC power limitation of the heterojunction bipolar transistor with dot geometry: Effect of base potential distribution on thermal runaway
|
Liou, L.L
|
|
1997
|
41 |
6 |
p. 871-877
7 p.
|
artikel
|
| 6 |
Effect of poly thickness and substrate doping on the electrical characteristics of polyemitter n +-p junctions
|
Tilak, A.V.N
|
|
1997
|
41 |
6 |
p. 909-912
4 p.
|
artikel
|
| 7 |
Effects of H2 plasma exposure on GaAs AlGaAs heterojunction bipolar transistors
|
Lee, J.W
|
|
1997
|
41 |
6 |
p. 829-833
5 p.
|
artikel
|
| 8 |
Effects of plasma treatments on the erosion of TEOS-BPSG films by chemical etchants
|
Lee, Chongmu
|
|
1997
|
41 |
6 |
p. 921-923
3 p.
|
artikel
|
| 9 |
Electroluminescence of MOS capacitors with Si-implanted SiO2
|
Matsuda, T
|
|
1997
|
41 |
6 |
p. 887-893
7 p.
|
artikel
|
| 10 |
High-frequency simulation of nonlinear properties of a double-barrier device, using parallel computing
|
Liou, W.-R
|
|
1997
|
41 |
6 |
p. 865-869
5 p.
|
artikel
|
| 11 |
Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n + p diodes
|
Vandamme, L.K.J
|
|
1997
|
41 |
6 |
p. 901-908
8 p.
|
artikel
|
| 12 |
Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes
|
Meva'a, C
|
|
1997
|
41 |
6 |
p. 857-864
8 p.
|
artikel
|
| 13 |
Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors
|
Armstrong, G.A
|
|
1997
|
41 |
6 |
p. 835-844
10 p.
|
artikel
|
| 14 |
Pd/Zn/Pd ohmic contacts to p-type GaP
|
Baojun, Li
|
|
1997
|
41 |
6 |
p. 917-920
4 p.
|
artikel
|
| 15 |
Thermally induced capacitance and electric field domains in GaAs Al 0.3 Ga 0.7 As quantum well infrared photodetector
|
Huang, X.L
|
|
1997
|
41 |
6 |
p. 845-850
6 p.
|
artikel
|
| 16 |
The role of acceptor density in GaAs AlGaAs based quantum well HEMTs
|
Nawaz, M
|
|
1997
|
41 |
6 |
p. 851-855
5 p.
|
artikel
|
| 17 |
Transport in the surface channel of strained Si on a relaxed Si1−x Ge x substrate
|
Formicone, G.F
|
|
1997
|
41 |
6 |
p. 879-885
7 p.
|
artikel
|
| 18 |
Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures
|
Minarsky, A.M
|
|
1997
|
41 |
6 |
p. 813-824
12 p.
|
artikel
|
| 19 |
Variation of contact characteristics for metal to p + junctions using TiN as diffusion barrier
|
Juang, M.H
|
|
1997
|
41 |
6 |
p. 825-828
4 p.
|
artikel
|
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