| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Ga2O3 passivation technique compatible with GaAs device processing
|
Hong, M
|
|
1997
|
41 |
4 |
p. 643-646
4 p.
|
artikel
|
| 2 |
An accurate mathematical model for the intrinsic base resistance of bipolar transistors
|
Ciubotaru, Alexandru A
|
|
1997
|
41 |
4 |
p. 655-658
4 p.
|
artikel
|
| 3 |
Analysis of variance-reduction schemes for ensemble Monte Carlo simulation of semiconductor devices
|
Pacelli, A
|
|
1997
|
41 |
4 |
p. 599-605
7 p.
|
artikel
|
| 4 |
An analytical model for the effect of graded gate oxide on the channel electric field in MOSFETs with lightly doped drain structure
|
Kim, Jong-Shik
|
|
1997
|
41 |
4 |
p. 650-654
5 p.
|
artikel
|
| 5 |
A new generation-recombination model for device simulation including the Poole-Frenkel effect and phonon-assisted tunnelling
|
Lui, O.K.B
|
|
1997
|
41 |
4 |
p. 575-583
9 p.
|
artikel
|
| 6 |
An improved high frequency C-V method for interface state analysis on MIS structures
|
Koukab, A
|
|
1997
|
41 |
4 |
p. 635-641
7 p.
|
artikel
|
| 7 |
Conduction mechanisms in W and WSi x ohmic contacts to InGaN and InN
|
Vartuli, C.B
|
|
1997
|
41 |
4 |
p. 531-534
4 p.
|
artikel
|
| 8 |
Current saturation mechanism and FBSOA of the SIMEST
|
Sridhar, S
|
|
1997
|
41 |
4 |
p. 561-566
6 p.
|
artikel
|
| 9 |
Damage characterisation of InP after reactive ion etching using the low-frequency noise measurement technique
|
Gottwald, P
|
|
1997
|
41 |
4 |
p. 539-545
7 p.
|
artikel
|
| 10 |
Dependence of polarization mode and threshold current on tensile strain in AlGaAs GaAsP quantum well lasers
|
Agahi, Farid
|
|
1997
|
41 |
4 |
p. 647-649
3 p.
|
artikel
|
| 11 |
Electrical properties of SOI n-MOSFETs under nonisothermal lattice temperature
|
Kim, Jin-Yang
|
|
1997
|
41 |
4 |
p. 567-573
7 p.
|
artikel
|
| 12 |
Frequency- and voltage-dependent degradation of polyemitter BJTs under a.c. stress
|
Hsu, Tsun-Lai
|
|
1997
|
41 |
4 |
p. 607-612
6 p.
|
artikel
|
| 13 |
Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K
|
Simoen, E
|
|
1997
|
41 |
4 |
p. 659-661
3 p.
|
artikel
|
| 14 |
MOS device fabrication via plasma immersion ion implantation
|
Chen, S.-M
|
|
1997
|
41 |
4 |
p. 535-537
3 p.
|
artikel
|
| 15 |
Nitride thickness dependence of trap generation and negative stress-induced current in oxidized nitride films (<5 nm)
|
Mazumder, Motaharul K
|
|
1997
|
41 |
4 |
p. 613-617
5 p.
|
artikel
|
| 16 |
Noncontacting photothermal radiometry of SiO2/Si MOS capacitor structures
|
Salnick, A
|
|
1997
|
41 |
4 |
p. 591-597
7 p.
|
artikel
|
| 17 |
Normal and anomalous behaviour of the RTS noise amplitude in forward biased InGaAs/InP photodiodes
|
Pogany, D
|
|
1997
|
41 |
4 |
p. 547-551
5 p.
|
artikel
|
| 18 |
Novel transient phenomena in heterojunction bipolar transistors
|
Posse, V.A
|
|
1997
|
41 |
4 |
p. 527-530
4 p.
|
artikel
|
| 19 |
Numerical analysis of poly-TFTs under off conditions
|
Colalongo, L
|
|
1997
|
41 |
4 |
p. 627-633
7 p.
|
artikel
|
| 20 |
Procedure to minimize interface-state errors in MIS doping profile determinations
|
Koukab, A
|
|
1997
|
41 |
4 |
p. 515-518
4 p.
|
artikel
|
| 21 |
Space charge transients of deep level defects characterised by Auger capture
|
Dózsa, L
|
|
1997
|
41 |
4 |
p. 585-590
6 p.
|
artikel
|
| 22 |
Static model of single heterojunction acoustic charge transfer structures
|
Hayden, R.K
|
|
1997
|
41 |
4 |
p. 553-559
7 p.
|
artikel
|
| 23 |
The impact of in-situ rapid thermal gate dielectric processes on deep submicron MOSFETs
|
Zhang, Kevin X
|
|
1997
|
41 |
4 |
p. 619-625
7 p.
|
artikel
|
| 24 |
Ultra-low-voltage MTCMOS/SIMOX technology hardened to temperature variation
|
Douseki, Takakuni
|
|
1997
|
41 |
4 |
p. 519-525
7 p.
|
artikel
|
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