| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple analytical model of counter doping in a uniformly and heavily doped channel region of MOSFETS
|
Suzuki, Kunihiro
|
|
1997
|
41 |
12 |
p. 1903-1911
9 p.
|
artikel
|
| 2 |
Charge transport in thick SiO2-based dielectric layers
|
Kanitz, Sven
|
|
1997
|
41 |
12 |
p. 1895-1902
8 p.
|
artikel
|
| 3 |
Comparison of high speed DI-LIGBT structures
|
Sunkavalli, Ravishankar
|
|
1997
|
41 |
12 |
p. 1953-1956
4 p.
|
artikel
|
| 4 |
Effect of substrate inhomogeneity on extrinsic photoconductivity of n-type GaAs thin-film structures under backgating
|
Kostylev, S.A.
|
|
1997
|
41 |
12 |
p. 1923-1927
5 p.
|
artikel
|
| 5 |
High performance pseudomorphic InGaP InGaAs power HEMTs
|
Ren, F.
|
|
1997
|
41 |
12 |
p. 1913-1915
3 p.
|
artikel
|
| 6 |
High performance Schottky contacts on Se-doped Al x Ga1−x As by cryogenic processing
|
He, L.
|
|
1997
|
41 |
12 |
p. 1881-1884
4 p.
|
artikel
|
| 7 |
Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field
|
Maiti, Chinmay K.
|
|
1997
|
41 |
12 |
p. 1863-1869
7 p.
|
artikel
|
| 8 |
Induced gate noise in MOSFETs revisited: The submicron case
|
Triantis, D.P.
|
|
1997
|
41 |
12 |
p. 1937-1942
6 p.
|
artikel
|
| 9 |
Influence of the trench corner design on edge termination of UMOS power devices
|
Thapar, Naresh
|
|
1997
|
41 |
12 |
p. 1929-1936
8 p.
|
artikel
|
| 10 |
Inverse-narrow-width effect of deep sub-micrometer MOSFETs with LOCOS isolation
|
Fung, Samuel K.H.
|
|
1997
|
41 |
12 |
p. 1885-1889
5 p.
|
artikel
|
| 11 |
Investigation into the effect of Auger recombination on charge carrier transport and static characteristics of silicon multilayer structures
|
Mnatsakanov, T.T.
|
|
1997
|
41 |
12 |
p. 1871-1880
10 p.
|
artikel
|
| 12 |
Measuring and calculating the Hall mobility of semiconductor epitaxial layers by a contactless method
|
Zongxin, Wang
|
|
1997
|
41 |
12 |
p. 1837-1843
7 p.
|
artikel
|
| 13 |
Modeling current-voltage and hysteretic current-voltage characteristics with two resonant tunneling diodes connected in series
|
Gan, Kwang-Jow
|
|
1997
|
41 |
12 |
p. 1917-1922
6 p.
|
artikel
|
| 14 |
Modelling and characterization of non-uniform substrate doping
|
Lallement, Christophe
|
|
1997
|
41 |
12 |
p. 1857-1861
5 p.
|
artikel
|
| 15 |
Modulation spectroscopy characterization of InP and GaAs solar cells
|
Rodrigues, R.G.
|
|
1997
|
41 |
12 |
p. 1827-1835
9 p.
|
artikel
|
| 16 |
n-Channel AlSb GaSb modulation-doped field-effect transistors
|
Li, X.
|
|
1997
|
41 |
12 |
p. 1853-1856
4 p.
|
artikel
|
| 17 |
Optimum Ge profile for base transit time minimization of SiGe HBT
|
Song, J.
|
|
1997
|
41 |
12 |
p. 1957-1959
3 p.
|
artikel
|
| 18 |
Schottky diode characteristics of Ti on strained-Si
|
Chattopadhyay, S.
|
|
1997
|
41 |
12 |
p. 1891-1893
3 p.
|
artikel
|
| 19 |
Stability of hydrogen in ScAlMgO4
|
Brandle, C.D.
|
|
1997
|
41 |
12 |
p. 1943-1945
3 p.
|
artikel
|
| 20 |
Theory of thermal noise in long-channel MOS transistors operating before saturation
|
Song, Duheon
|
|
1997
|
41 |
12 |
p. 1845-1852
8 p.
|
artikel
|
| 21 |
Wet chemical etching survey of III-nitrides
|
Vartuli, C.B.
|
|
1997
|
41 |
12 |
p. 1947-1951
5 p.
|
artikel
|
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